Inventor · disambiguated record
Chang-Kuei Huang
Also filed as: HUANG CHANG K · HUANG CHANG-KUEI
5 granted patents·5 pending applications·65 citations·filing 1990–2014
80Inventor score
Files withINNOLUX DISPLAY CORP5AT & T BELL LAB1INTERFACE OPTOELECTRONICS SHENZHEN CO LTD1WAFERTECH INC1WAFERTECH L L C1
Top patents by PatentIndex Score
10 records- 0168US6365015B1Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gapsWAFERTECH INC·Filed 2000·Granted Apr 2, 2002·14 cites·1 claims
- 0257US4981811AProcess for fabricating low defect polysiliconAT & T BELL LAB·Filed 1990·Granted Jan 1, 1991·28 cites·10 claims
- 0352US2015086708A1Method of processing a substrateINTERFACE OPTOELECTRONICS SHENZHEN CO LTD·Filed 2014·Application pending·0 cites
- 0446US6129819AMethod for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gapsWAFERTECH LLC·Filed 1998·Granted Oct 10, 2000·14 cites·2 claims
- 0542US7229521B2Etching system using a deionized water adding deviceINNOLUX DISPLAY CORP·Filed 2004·Granted Jun 12, 2007·2 cites·5 claims
- 0634US2005241760A1Wet etching systemINNOLUX DISPLAY CORP·Filed 2005·Application pending·0 cites
- 0732US2005279452A1Etching reaction device with protrusionsINNOLUX DISPLAY CORP·Filed 2005·Application pending·0 cites
- 0832US2006011577A1Method for post-treatment of semi-finished product after dry etching processINNOLUX DISPLAY CORP·Filed 2005·Application pending·0 cites
- 0930US2005274696A1Single-acid compensating systemINNOLUX DISPLAY CORP·Filed 2005·Application pending·0 cites
- 1029US6251795B1Method for depositing high density plasma chemical vapor deposition oxide with improved topographyWAFERTECH L L C·Filed 1999·Granted Jun 26, 2001·7 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →