Inventor · disambiguated record
Chi-I Lang
Also filed as: LANG CHI-I
97 granted patents·49 pending applications·6,017 citations·filing 1998–2025
99Inventor score
Files withAPPLIED MATERIALS INC50INTERMOLECULAR INC47NOVELLUS SYSTEMS INC13WANG YUN6Yang hong sheng5
Top patents by PatentIndex Score
146 records- 0199US8440259B2Vapor based combinatorial processingCHIANG TONY P·Filed 2008·Granted May 14, 2013·539 cites·19 claims
- 0299US7915139B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2009·Granted Mar 29, 2011·807 cites·25 claims
- 0399US7888233B1Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2009·Granted Feb 15, 2011·572 cites·30 claims
- 0499US7582555B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2005·Granted Sep 1, 2009·605 cites·20 claims
- 0599US7524735B1Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Apr 28, 2009·166 cites·19 claims
- 0699US7514375B1Pulsed bias having high pulse frequency for filling gaps with dielectric materialNOVELLUS SYSTEMS INC·Filed 2006·Granted Apr 7, 2009·559 cites·27 claims
- 0799US6413583B1Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compoundAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·725 cites·6 claims
- 0898US8821985B2Method and apparatus for high-K gate performance improvement and combinatorial processingINTERMOLECULAR INC·Filed 2012·Granted Sep 2, 2014·342 cites·12 claims
- 0998US8809161B2Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2013·Granted Aug 19, 2014·21 cites·27 claims
- 1098US7972897B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Jul 5, 2011·75 cites·24 claims
- 1198US7629198B2Methods for forming nonvolatile memory elements with resistive-switching metal oxidesINTERMOLECULAR INC·Filed 2007·Granted Dec 8, 2009·118 cites·40 claims
- 1296US8334015B2Vapor based combinatorial processingCHIANG TONY P·Filed 2008·Granted Dec 18, 2012·22 cites·9 claims
- 1396US7678607B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Mar 16, 2010·40 cites·31 claims
- 1496US6486082B1CVD plasma assisted lower dielectric constant sicoh filmAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·80 cites·30 claims
- 1595US8580697B1CVD flowable gap fillLANG CHI-I·Filed 2011·Granted Nov 12, 2013·44 cites·19 claims
- 1695US8481403B1Flowable film dielectric gap fill processGAURI VISHAL·Filed 2011·Granted Jul 9, 2013·30 cites·25 claims
- 1795US7902064B1Method of forming a layer to enhance ALD nucleation on a substrateINTERMOLECULAR INC·Filed 2008·Granted Mar 8, 2011·37 cites·14 claims
- 1895US7211525B1Hydrogen treatment enhanced gap fillNOVELLUS SYSTEMS INC·Filed 2005·Granted May 1, 2007·540 cites·21 claims
- 1995US6709715B1Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bondsAPPLIED MATERIALS INC·Filed 1999·Granted Mar 23, 2004·109 cites·5 claims
- 2094US8821987B2Combinatorial processing using a remote plasma sourceINTERMOLECULAR INC·Filed 2012·Granted Sep 2, 2014·8 cites·9 claims
- 2194US7704789B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Apr 27, 2010·29 cites·14 claims
- 2294US6086952AChemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomerAPPLIED MATERIALS INC·Filed 1998·Granted Jul 11, 2000·93 cites·4 claims
- 2393US8432177B2High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substratesWANG YUN·Filed 2010·Granted Apr 30, 2013·10 cites·20 claims
- 2493US7919446B1Post-CMP cleaning compositions and methods of using sameINTERMOLECULAR INC·Filed 2008·Granted Apr 5, 2011·21 cites·7 claims
- 2593US7745328B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·12 cites·5 claims
- 2693US7727906B1H2-based plasma treatment to eliminate within-batch and batch-to-batch etch driftNOVELLUS SYSTEMS INC·Filed 2006·Granted Jun 1, 2010·23 cites·15 claims
- 2793US7435684B1Resolving of fluorine loading effect in the vacuum chamberNOVELLUS SYSTEMS INC·Filed 2006·Granted Oct 14, 2008·67 cites·13 claims
- 2892US7344996B1Helium-based etch process in deposition-etch-deposition gap fillNOVELLUS SYSTEMS INC·Filed 2005·Granted Mar 18, 2008·22 cites·10 claims
- 2991US7482245B1Stress profile modulation in STI gap fillNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 27, 2009·22 cites·22 claims
- 3091US7465659B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2006·Granted Dec 16, 2008·8 cites·12 claims
- 3190US8657966B2Combinatorial approach to the development of cleaning formulations for glue removal in semiconductor applicationsKALYANKAR NIKHIL D·Filed 2009·Granted Feb 25, 2014·13 cites·15 claims
- 3289US12020908B2Atomic layer etching of Ru metalAPPLIED MATERIALS INC·Filed 2022·Granted Jun 25, 2024·1 cites·18 claims
- 3389US8298891B1Resistive-switching memory elementCHIANG TONY·Filed 2009·Granted Oct 30, 2012·8 cites·7 claims
- 3489US7476621B1Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fillNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 13, 2009·15 cites·21 claims
- 3588US6838393B2Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbideAPPLIED MATERIALS INC·Filed 2002·Granted Jan 4, 2005·24 cites·27 claims
- 3687US7658790B1Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layersINTERMOLECULAR INC·Filed 2007·Granted Feb 9, 2010·7 cites·18 claims
- 3786US10954129B2Diamond-like carbon as mandrelAPPLIED MATERIALS INC·Filed 2018·Granted Mar 23, 2021·3 cites·10 claims
- 3886US8476107B2Methods for forming resistive switching memory elementsKUMAR NITIN·Filed 2011·Granted Jul 2, 2013·5 cites·7 claims
- 3985US11495461B2Film stack for lithography applicationsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 8, 2022·2 cites·20 claims
- 4083US9245744B2Combinatorial plasma enhanced deposition and etch techniquesINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·4 cites·20 claims
- 4183US9103871B2High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substratesINTERMOLECULAR INC·Filed 2013·Granted Aug 11, 2015·3 cites·10 claims
- 4283US8726838B2Combinatorial plasma enhanced deposition and etch techniquesSHANKER SUNIL·Filed 2010·Granted May 20, 2014·5 cites·15 claims
- 4382US8859427B2Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processingKONG BOB·Filed 2011·Granted Oct 14, 2014·4 cites·3 claims
- 4482US8097878B2Nonvolatile memory elements with metal-deficient resistive-switching metal oxidesKUMAR NITIN·Filed 2007·Granted Jan 17, 2012·14 cites·3 claims
- 4582US7879710B2Substrate processing including a masking layerINTERMOLECULAR INC·Filed 2006·Granted Feb 1, 2011·6 cites·13 claims
- 4680US9245793B2Plasma treatment of low-K surface to improve barrier depositionINTERMOLECULAR INC·Filed 2013·Granted Jan 26, 2016·5 cites·14 claims
- 4780US8679988B2Plasma processing of metal oxide films for resistive memory device applicationsLEE ALBERT·Filed 2011·Granted Mar 25, 2014·5 cites·10 claims
- 4879US9245848B2Methods for coating a substrate with an amphiphilic compoundINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·3 cites·15 claims
- 4979US8575021B2Substrate processing including a masking layerINTERMOLECULAR INC·Filed 2013·Granted Nov 5, 2013·4 cites·16 claims
- 5079US7381451B1Strain engineering—HDP thin film with tensile stress for FEOL and other applicationsNOVELLUS SYSTEMS INC·Filed 2004·Granted Jun 3, 2008·28 cites·35 claims
Showing the top 50 of 146 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →