Inventor · disambiguated record
Christian Lavoie
Also filed as: LAVOIE CHRISTIAN · LAVOIE CHRISTIAN C
175 granted patents·37 pending applications·2,036 citations·filing 1993–2024
99Inventor score
Top patents by PatentIndex Score
212 records- 0197US9520547B2Chip mode isolation and cross-talk reduction through buried metal layers and through-viasIBM·Filed 2013·Granted Dec 13, 2016·28 cites·6 claims
- 0297US9397283B2Chip mode isolation and cross-talk reduction through buried metal layers and through-viasIBM·Filed 2015·Granted Jul 19, 2016·24 cites·15 claims
- 0397US8878311B2Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate sameIBM·Filed 2013·Granted Nov 4, 2014·20 cites·7 claims
- 0497US8492854B1Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate sameIBM·Filed 2012·Granted Jul 23, 2013·19 cites·6 claims
- 0597US8119466B2Self-aligned process for nanotube/nanowire FETsAVOURIS PHAEDON·Filed 2011·Granted Feb 21, 2012·515 cites·20 claims
- 0694US6503833B1Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed therebyIBM·Filed 2000·Granted Jan 7, 2003·83 cites·35 claims
- 0793US9379012B2Oxide mediated epitaxial nickel disilicide alloy contact formationGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 28, 2016·7 cites·18 claims
- 0893US7598516B2Self-aligned process for nanotube/nanowire FETsIBM·Filed 2005·Granted Oct 6, 2009·24 cites·15 claims
- 0993US6645861B2Self-aligned silicide process for silicon sidewall source and drain contactsIBM·Filed 2001·Granted Nov 11, 2003·71 cites·35 claims
- 1092US8927057B2Graphene formation utilizing solid phase carbon sourcesBOL AGEETH A·Filed 2010·Granted Jan 6, 2015·14 cites·13 claims
- 1192US8030154B1Method for forming a protection layer over metal semiconductor contact and structure formed thereonIBM·Filed 2010·Granted Oct 4, 2011·15 cites·23 claims
- 1292US7067368B1Method for forming self-aligned dual salicide in CMOS technologiesIBM·Filed 2005·Granted Jun 27, 2006·17 cites·10 claims
- 1392US6555880B2Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed therebyIBM·Filed 2001·Granted Apr 29, 2003·54 cites·9 claims
- 1491US5388909AOptical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gapFiled 1993·Granted Feb 14, 1995·114 cites·17 claims
- 1590US9059096B2Method to form silicide contact in trenchesGUILLORN MICHAEL A·Filed 2012·Granted Jun 16, 2015·11 cites·13 claims
- 1690US9041151B2Fin eFuse formed by trench silicide processIBM·Filed 2013·Granted May 26, 2015·10 cites·18 claims
- 1790US7491643B2Method and structure for reducing contact resistance between silicide contact and overlying metallizationIBM·Filed 2006·Granted Feb 17, 2009·16 cites·1 claims
- 1890US6323130B1Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridgingIBM·Filed 2000·Granted Nov 27, 2001·59 cites·16 claims
- 1989US9595524B2FinFET source-drain merged by silicide-based materialGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 14, 2017·9 cites·9 claims
- 2089US9543167B2FinFET source-drain merged by silicide-based materialGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 10, 2017·8 cites·14 claims
- 2189US8614107B2Liner-free tungsten contactIBM·Filed 2013·Granted Dec 24, 2013·8 cites·7 claims
- 2289US6448131B1Method for increasing the capacitance of a trench capacitorIBM·Filed 2001·Granted Sep 10, 2002·48 cites·38 claims
- 2389US6444578B1Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devicesIBM·Filed 2001·Granted Sep 3, 2002·50 cites·50 claims
- 2488US10546941B2Forming thermally stable salicide for salicide first contactsIBM·Filed 2017·Granted Jan 28, 2020·3 cites·18 claims
- 2588US9236345B2Oxide mediated epitaxial nickel disilicide alloy contact formationGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·6 cites·12 claims
- 2688US9018714B2Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate sameIBM·Filed 2014·Granted Apr 28, 2015·6 cites·5 claims
- 2788US7923838B2Method and structure for reducing contact resistance between silicide contact and overlying metallizationIBM·Filed 2008·Granted Apr 12, 2011·12 cites·6 claims
- 2888US6440851B1Method and structure for controlling the interface roughness of cobalt disilicideIBM·Filed 1999·Granted Aug 27, 2002·57 cites·24 claims
- 2988US5568978AOptical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gapFiled 1994·Granted Oct 29, 1996·66 cites·9 claims
- 3087US10685888B2Low resistance source-drain contacts using high temperature silicidesIBM·Filed 2016·Granted Jun 16, 2020·3 cites·10 claims
- 3187US8614106B2Liner-free tungsten contactLAVOIE CHRISTIAN·Filed 2011·Granted Dec 24, 2013·7 cites·15 claims
- 3287US8278200B2Metal-semiconductor intermixed regionsLAVOIE CHRISTIAN·Filed 2011·Granted Oct 2, 2012·8 cites·15 claims
- 3387US8003453B2Self-aligned process for nanotube/nanowire FETsIBM·Filed 2008·Granted Aug 23, 2011·11 cites·14 claims
- 3487US7993987B1Surface cleaning using sacrificial getter layerIBM·Filed 2010·Granted Aug 9, 2011·8 cites·20 claims
- 3587US7759208B1Low temperature ion implantation for improved silicide contactsIBM·Filed 2009·Granted Jul 20, 2010·14 cites·20 claims
- 3686US9837357B1Method to reduce variability in contact resistanceIBM·Filed 2017·Granted Dec 5, 2017·4 cites·20 claims
- 3786US8101518B2Method and process for forming a self-aligned silicide contactCABRAL JR CYRIL·Filed 2008·Granted Jan 24, 2012·12 cites·27 claims
- 3886US7888264B2MOSFET structure with multiple self-aligned silicide contactsIBM·Filed 2010·Granted Feb 15, 2011·6 cites·22 claims
- 3985US9093425B1Self-aligned liner formed on metal semiconductor alloy contactsIBM·Filed 2014·Granted Jul 28, 2015·6 cites·9 claims
- 4085US7927895B1Varying capacitance voltage contrast structures to determine defect resistanceIBM·Filed 2009·Granted Apr 19, 2011·9 cites·16 claims
- 4185US7737032B2MOSFET structure with multiple self-aligned silicide contactsIBM·Filed 2008·Granted Jun 15, 2010·8 cites·22 claims
- 4284US7679164B2Bipolar transistor with silicided sub-collectorIBM·Filed 2007·Granted Mar 16, 2010·9 cites·25 claims
- 4383US10411101B1P-N junction based devices with single species impurity for P-type and N-type dopingIBM·Filed 2018·Granted Sep 10, 2019·2 cites·9 claims
- 4483US8859316B2Schottky junction si nanowire field-effect bio-sensor/molecule detectorGUO DECHAO·Filed 2010·Granted Oct 14, 2014·9 cites·15 claims
- 4583US8349716B2Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor deviceIBM·Filed 2010·Granted Jan 8, 2013·7 cites·20 claims
- 4682US7528067B2MOSFET structure with multiple self-aligned silicide contactsIBM·Filed 2006·Granted May 5, 2009·7 cites·1 claims
- 4782US7517795B2Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidationIBM·Filed 2006·Granted Apr 14, 2009·9 cites·1 claims
- 4882US7419907B2Eliminating metal-rich silicides using an amorphous Ni alloy silicide structureIBM·Filed 2005·Granted Sep 2, 2008·6 cites·12 claims
- 4982US7129548B2MOSFET structure with multiple self-aligned silicide contactsIBM·Filed 2004·Granted Oct 31, 2006·20 cites·14 claims
- 5081US10541191B2Elbow contact for field-effect transistor and manufacture thereofIBM·Filed 2017·Granted Jan 21, 2020·2 cites·6 claims
Showing the top 50 of 212 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Christian Lavoie files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →