Inventor · disambiguated record
Choong-Man Lee
Also filed as: LEE CHOONG-MAN
16 granted patents·3 pending applications·546 citations·filing 2005–2024
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11TOKYO ELECTRON LTD3ASM IP HOLDING BV1NAKANISHI TOSHIRO1PARK HYE-YOUNG1
Top patents by PatentIndex Score
19 records- 0198US10249577B2Method of forming metal interconnection and method of fabricating semiconductor apparatus using the methodASM IP HOLDING BV·Filed 2017·Granted Apr 2, 2019·414 cites·16 claims
- 0295US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0394US7569417B2Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 4, 2009·38 cites·27 claims
- 0493US11915931B2Extreme ultraviolet lithography patterning methodTOKYO ELECTRON LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 0588US8034683B2Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formedSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 11, 2011·8 cites·20 claims
- 0687US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 0783US12494369B2Extreme ultraviolet lithography patterning methodTOKYO ELECTRON LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
- 0883US8673721B2Three-dimensional semiconductor memory device and method for manufacturing the sameTOSHIRO NAKANISHI·Filed 2011·Granted Mar 18, 2014·19 cites·10 claims
- 0981US7858464B2Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 28, 2010·7 cites·17 claims
- 1076US7585683B2Methods of fabricating ferroelectric devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 1162US2025164891A1Layer stack for extreme ultraviolet lithographyTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1260US8525244B2Germanium compound, semiconductor device fabricated using the same, and methods of forming the samePARK HYE-YOUNG·Filed 2007·Granted Sep 3, 2013·0 cites·14 claims
- 1359US8080839B2Electro-mechanical transistorTIWARI SANDIP·Filed 2009·Granted Dec 20, 2011·2 cites·14 claims
- 1451US7585692B2Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·0 cites·15 claims
- 1547US2009061538A1Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1646US7811834B2Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 12, 2010·0 cites·5 claims
- 1743US2007148933A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1842US7855145B2Gap filling method and method for forming semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 21, 2010·0 cites·14 claims
- 1940US8785276B2Methods for fabricating a cell string and a non-volatile memory device including the cell stringNAKANISHI TOSHIRO·Filed 2011·Granted Jul 22, 2014·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Choong-Man Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →