Inventor · disambiguated record
Chung-Hsun Lin
Also filed as: LIN CHUNG-HSUN
151 granted patents·51 pending applications·1,064 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
202 records- 0198US8669615B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·47 cites·15 claims
- 0298US8536029B1Nanowire FET and finFETCHANG JOSEPHINE B·Filed 2012·Granted Sep 17, 2013·48 cites·20 claims
- 0397US9646883B2Chemoepitaxy etch trim using a self aligned hard mask for metal line to viaIBM·Filed 2015·Granted May 9, 2017·10 cites·16 claims
- 0497US9577061B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Feb 21, 2017·11 cites·4 claims
- 0597US9570354B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Feb 14, 2017·12 cites·14 claims
- 0697US9412667B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2014·Granted Aug 9, 2016·22 cites·17 claims
- 0797US8936972B2Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device widthBANGSARUNTIP SARUNYA·Filed 2012·Granted Jan 20, 2015·29 cites·22 claims
- 0897US8722472B2Hybrid CMOS nanowire mesh device and FINFET deviceCHANG JOSEPHINE B·Filed 2011·Granted May 13, 2014·40 cites·12 claims
- 0997US8658518B1Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·29 cites·20 claims
- 1097US8551833B2Double gate planar field effect transistorsCHANG JOSEPHINE B·Filed 2011·Granted Oct 8, 2013·32 cites·17 claims
- 1197US8466012B1Bulk FinFET and SOI FinFET hybrid technologyCHANG JOSEPHINE B·Filed 2012·Granted Jun 18, 2013·40 cites·21 claims
- 1297US8362574B2Faceted EPI shape and half-wrap around silicide in S/D merged FinFETTOSHIBA KK·Filed 2010·Granted Jan 29, 2013·53 cites·18 claims
- 1396US9859122B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Jan 2, 2018·7 cites·7 claims
- 1496US9685379B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jun 20, 2017·9 cites·8 claims
- 1596US9543213B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jan 10, 2017·10 cites·12 claims
- 1696US8513131B2Fin field effect transistor with variable channel thickness for threshold voltage tuningCAI MING·Filed 2011·Granted Aug 20, 2013·39 cites·14 claims
- 1796US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 1895US12272737B2Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contactINTEL CORP·Filed 2023·Granted Apr 8, 2025·2 cites·21 claims
- 1995US9768071B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Sep 19, 2017·6 cites·16 claims
- 2095US9680020B2Increased contact area for FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 13, 2017·10 cites·16 claims
- 2195US9559010B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jan 31, 2017·7 cites·7 claims
- 2295US9157887B2Graphene sensorIBM·Filed 2013·Granted Oct 13, 2015·19 cites·4 claims
- 2395US8928083B2Diode structure and method for FINFET technologiesIBM·Filed 2013·Granted Jan 6, 2015·18 cites·10 claims
- 2495US8709888B2Hybrid CMOS nanowire mesh device and PDSOI deviceCHANG JOSEPHINE B·Filed 2011·Granted Apr 29, 2014·23 cites·11 claims
- 2595US8673731B2Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 18, 2014·19 cites·19 claims
- 2695US8669167B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·19 cites·19 claims
- 2794US9922831B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Mar 20, 2018·5 cites·9 claims
- 2894US9721843B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Aug 1, 2017·6 cites·13 claims
- 2994US8592264B2Source-drain extension formation in replacement metal gate transistor deviceANDO TAKASHI·Filed 2011·Granted Nov 26, 2013·17 cites·11 claims
- 3094US8362568B2Recessed contact for multi-gate FET optimizing series resistanceIBM·Filed 2009·Granted Jan 29, 2013·29 cites·8 claims
- 3193US9006087B2Diode structure and method for wire-last nanomesh technologiesIBM·Filed 2013·Granted Apr 14, 2015·15 cites·8 claims
- 3293US8927397B2Diode structure and method for gate all around silicon nanowire technologiesIBM·Filed 2013·Granted Jan 6, 2015·14 cites·18 claims
- 3393US8896063B2FinFET devices containing merged epitaxial Fin-containing contact regionsIBM·Filed 2013·Granted Nov 25, 2014·15 cites·16 claims
- 3493US8659084B1Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·14 cites·14 claims
- 3593US8138030B2Asymmetric finFET device with improved parasitic resistance and capacitanceCHANG JOSEPHINE B·Filed 2009·Granted Mar 20, 2012·21 cites·11 claims
- 3692US10367072B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Jul 30, 2019·3 cites·13 claims
- 3792US9230989B2Hybrid CMOS nanowire mesh device and FINFET deviceIBM·Filed 2014·Granted Jan 5, 2016·13 cites·18 claims
- 3892US9068936B2Graphene sensorGUO DECHAO·Filed 2012·Granted Jun 30, 2015·11 cites·10 claims
- 3992US8742511B2Double gate planar field effect transistorsIBM·Filed 2013·Granted Jun 3, 2014·9 cites·12 claims
- 4092US8637931B2finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2011·Granted Jan 28, 2014·13 cites·18 claims
- 4190US11908856B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Feb 20, 2024·5 cites·22 claims
- 4290US11799009B2Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contactINTEL CORP·Filed 2019·Granted Oct 24, 2023·4 cites·28 claims
- 4390US9837319B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Dec 5, 2017·3 cites·13 claims
- 4490US9716036B2Electronic device including moat power metallization in trenchGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 25, 2017·6 cites·16 claims
- 4590US9018084B2Tapered fin field effect transistorIBM·Filed 2013·Granted Apr 28, 2015·9 cites·11 claims
- 4690US8816327B2Nanowire efusesCHANG JOSEPHINE B·Filed 2012·Granted Aug 26, 2014·10 cites·1 claims
- 4789US9553173B1Asymmetric finFET memory access transistorIBM·Filed 2015·Granted Jan 24, 2017·5 cites·15 claims
- 4889US8901655B2Diode structure for gate all around silicon nanowire technologiesIBM·Filed 2013·Granted Dec 2, 2014·9 cites·7 claims
- 4989US8643107B2Body-tied asymmetric N-type field effect transistorSLEIGHT JEFFREY W·Filed 2010·Granted Feb 4, 2014·10 cites·23 claims
- 5089US8637371B2Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the sameCHANG JOSEPHINE B·Filed 2012·Granted Jan 28, 2014·11 cites·10 claims
Showing the top 50 of 202 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →