Inventor · disambiguated record
Chang-Song Lin
Also filed as: LIN CHANG SONG
10 granted patents·1 pending application·261 citations·filing 1996–2006
91Inventor score
Top patents by PatentIndex Score
11 records- 0183US5872042AMethod for alignment mark regenerationTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 16, 1999·70 cites·5 claims
- 0282US6358796B1Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·46 cites·24 claims
- 0375US6753569B2Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·18 cites·9 claims
- 0472US6090668AMethod to fabricate sharp tip of poly in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 18, 2000·34 cites·16 claims
- 0571US6110782AMethod to combine high voltage device and salicide processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 29, 2000·32 cites·20 claims
- 0667US6417046B1Modified nitride spacer for solving charge retention issue in floating gate memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·12 cites·24 claims
- 0764US5747382ATwo-step planarization process using chemical-mechanical polishing and reactive-ion-etchingTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted May 5, 1998·30 cites·23 claims
- 0856US6117732AUse of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·17 cites·19 claims
- 0939US7036099B2Integrated circuit capable of locating failure process layersFARADAY TECH CORP·Filed 2003·Granted Apr 25, 2006·2 cites·3 claims
- 1037US7464357B2Integrated circuit capable of locating failure process layersFARADAY TECH CORP·Filed 2006·Granted Dec 9, 2008·0 cites·13 claims
- 1137US2002142535A1Modified nitride spacer for solving charge retention issue in floating gate memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →