Inventor · disambiguated record

Chih-Han Lin

Also filed as: LIN CHIH-HAN · LIN CHIH-HAN CHENG

417 granted patents·64 pending applications·1,245 citations·filing 2006–2025

99Inventor score

Technology areasH10P H10D H10W H01L B62J

Files withTAIWAN SEMICONDUCTOR MFG CO LTD465 TAIWAN SEMICONDUCTOR MFG7 KNOW FAST SMART TECH CO LTD2 LIN CHIH-HAN2 LIN JR JUNG2

Top patents by PatentIndex Score

481 records

0199US9331074B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 3, 2016·111 cites·20 claims
0298US11387341B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
0398US11177178B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·4 cites·20 claims
0498US9837510B2Method for manufacturing semiconductor fin structure with extending gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·24 cites·19 claims
0598US9627379B1FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·35 cites·20 claims
0698US9461044B1Fin field effect transistor, semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·44 cites·20 claims
0797US12408314B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·2 cites·20 claims
0897US11721700B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·3 cites·20 claims
0997US11251284B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·4 cites·20 claims
1097US10269802B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 23, 2019·17 cites·20 claims
1197US10163640B1Gate isolation plugs structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·20 cites·20 claims
1297US9953874B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·18 cites·20 claims
1397US9935103B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·14 cites·20 claims
1497US9929242B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 27, 2018·22 cites·22 claims
1597US9917085B2Metal gate isolation structure and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·18 cites·20 claims
1697US9818649B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·11 cites·20 claims
1797US9577036B1FinFET isolation structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·16 cites·20 claims
1897US9496363B1FinFET isolation structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·20 cites·20 claims
1997US9490176B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·20 cites·20 claims
2097US9245883B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 26, 2016·30 cites·11 claims
2196US11942363B2Methods for forming stacked layers and devices formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
2296US11908920B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
2396US11804534B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·3 cites·20 claims
2496US11488858B2Methods for forming stacked layers and devices formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·4 cites·20 claims
2596US10700180B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·8 cites·20 claims
2696US10355110B2FinFET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·11 cites·20 claims
2796US10164046B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·20 claims
2896US10084085B2Fin field effect transistor (FinFET) device structure with stop layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 25, 2018·11 cites·17 claims
2996US9929271B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·10 cites·20 claims
3096US9773912B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·11 cites·20 claims
3196US9761483B1Semiconductor devices, FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·13 cites·20 claims
3296US9716154B2Semiconductor structure having a gas-filled gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·12 cites·20 claims
3396US9704751B1Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·15 cites·20 claims
3496US9704752B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·16 cites·20 claims
3596US9627316B1Field effect transistor devices having interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·18 cites·20 claims
3696US9570567B1Source and drain process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·14 cites·20 claims
3796US9559100B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 31, 2017·15 cites·20 claims
3896US9461043B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·11 cites·20 claims
3996US9450099B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·17 cites·20 claims
4095US11908903B2Process window control for gate formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·2 cites·20 claims
4195US11908746B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·2 cites·20 claims
4295US11271086B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·3 cites·20 claims
4395US10867865B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
4495US10164029B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·10 cites·20 claims
4595US9722079B2Fin-type field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 1, 2017·9 cites·20 claims
4695US9685554B1Fin field effect transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·9 cites·20 claims
4795US9659813B1Interconnection and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·14 cites·20 claims
4895US9614089B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·8 cites·20 claims
4995US9530887B1Fin-type field effect transistor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 27, 2016·15 cites·20 claims
5095US9502567B2Semiconductor fin structure with extending gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims

Showing the top 50 of 481 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →