Inventor · disambiguated record
Chi-Wen Liu
Also filed as: LIU CHI W · LIU CHI-WEN
265 granted patents·29 pending applications·6,387 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD201TAIWAN SEMICONDUCTOR MFG66LIU CHI-WEN8CHIANG KUO-CHING3ASUSTEK COMP INC2
Top patents by PatentIndex Score
294 records- 0199US9859380B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·205 cites·20 claims
- 0299US9853101B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·151 cites·20 claims
- 0399US9786774B2Metal gate of gate-all-around transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 10, 2017·132 cites·20 claims
- 0499US9608116B2FINFETs with wrap-around silicide and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·1.3k cites·20 claims
- 0599US9601342B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·288 cites·20 claims
- 0699US9536738B2Vertical gate all around (VGAA) devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·878 cites·20 claims
- 0799US9449975B1FinFET devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·27 cites·20 claims
- 0899US9418897B1Wrap around silicide for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·239 cites·20 claims
- 0999US8828823B2FinFET device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 9, 2014·194 cites·20 claims
- 1098US9620610B1FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·22 cites·19 claims
- 1198US9559184B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·24 cites·20 claims
- 1298US8796666B1MOS devices with strain buffer layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·1.2k cites·20 claims
- 1398US8723272B2FinFET device and method of manufacturing sameLIU CHI-WEN·Filed 2011·Granted May 13, 2014·529 cites·16 claims
- 1497US10164069B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·13 cites·20 claims
- 1597US9905467B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·19 cites·20 claims
- 1697US9722050B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 1, 2017·14 cites·20 claims
- 1797US9716146B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 25, 2017·12 cites·20 claims
- 1897US9576908B1Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·14 cites·20 claims
- 1997US9461110B1FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·18 cites·20 claims
- 2097US9318367B2FinFET structure with different fin heights and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 19, 2016·25 cites·15 claims
- 2197US8586436B2Method of forming a variety of replacement gate types including replacement gate types on a hybrid semiconductor deviceNG JIN-AUN·Filed 2012·Granted Nov 19, 2013·50 cites·10 claims
- 2296US10505022B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
- 2396US10164016B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·19 claims
- 2496US10032873B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·10 cites·20 claims
- 2596US9917178B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 13, 2018·10 cites·20 claims
- 2696US9553025B2Selective Fin-shaping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·14 cites·20 claims
- 2795US11682625B2Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
- 2895US10763368B2Stacked gate-all-around FinFET and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·6 cites·20 claims
- 2995US9966471B2Stacked Gate-All-Around FinFET and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 8, 2018·9 cites·20 claims
- 3095US9337192B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·13 cites·18 claims
- 3195US9306069B2Isolation structure of fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 5, 2016·15 cites·20 claims
- 3295US9287262B2Passivated and faceted for fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·13 cites·20 claims
- 3395US9196522B2FinFET with buried insulator layer and method for formingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·18 cites·20 claims
- 3495US9159824B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 3595US9159833B2Fin structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·15 cites·20 claims
- 3695US8987791B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·18 cites·19 claims
- 3795US8946829B2Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applicationsWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 3, 2015·17 cites·12 claims
- 3895US7221584B2MRAM cell having shared configurationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 22, 2007·27 cites·26 claims
- 3994US10998415B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·7 cites·20 claims
- 4094US10727298B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·5 cites·20 claims
- 4194US10170365B2Wrap around silicide for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·6 cites·20 claims
- 4294US9721896B2Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·8 cites·20 claims
- 4394US9711607B1One-dimensional nanostructure growth on graphene and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·9 cites·20 claims
- 4494US9312354B2Contact etch stop layers of a field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·15 cites·20 claims
- 4594US6673661B1Self-aligned method for forming dual gate thin film transistor (TFT) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 6, 2004·96 cites·13 claims
- 4693US9577049B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·12 cites·20 claims
- 4793US9520498B2FinFET structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·10 cites·20 claims
- 4893US9337318B2FinFET with dummy gate on non-recessed shallow trench isolation (STI)TAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 10, 2016·14 cites·20 claims
- 4993US9287385B2Multi-fin device and method of making sameLIU CHI-WEN·Filed 2011·Granted Mar 15, 2016·12 cites·19 claims
- 5092US10283590B2Field-effect transistors having contacts to 2D material active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 7, 2019·7 cites·16 claims
Showing the top 50 of 294 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →