Inventor · disambiguated record
Changwoo Oh
Also filed as: OH CHANGWOO
10 granted patents·3 pending applications·85 citations·filing 2011–2019
88Inventor score
Top patents by PatentIndex Score
13 records- 0195US9123774B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 1, 2015·24 cites·12 claims
- 0289US8679910B2Methods of fabricating devices including source/drain region with abrupt junction profileMING LI·Filed 2011·Granted Mar 25, 2014·26 cites·19 claims
- 0387US9087723B2Field effect transistor and method of fabricating the sameLEE CHOONG-HO·Filed 2013·Granted Jul 21, 2015·9 cites·16 claims
- 0486US8941155B2Fin field effect transistors including multiple lattice constants and methods of fabricating the sameKANG MYUNG GIL·Filed 2012·Granted Jan 27, 2015·14 cites·18 claims
- 0582US9520458B2Resistor formed using resistance patterns and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 13, 2016·5 cites·20 claims
- 0680US9653551B2Field effect transistors including fin structures with different doped regions and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·4 cites·19 claims
- 0768US9048120B2Integrated junction and junctionless nanotransistorsSUK SUNG-DAE·Filed 2013·Granted Jun 2, 2015·2 cites·23 claims
- 0865US9171845B2Integrated junction and junctionless nanotransistorsSUK SUNG-DAE·Filed 2015·Granted Oct 27, 2015·1 cites·11 claims
- 0953US2018331201A1Field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 1049US9252274B2Fin field effect transistors including multiple lattice constants and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·0 cites·4 claims
- 1146US2015279960A1Field effect transistor and method of fabricating the sameLEE CHOONG-HO·Filed 2015·Application pending·0 cites
- 1240US11973013B2InterposerAMOSENSE CO LTD·Filed 2019·Granted Apr 30, 2024·0 cites·17 claims
- 1338US2013249003A1Field effect transistors including fin structures with different doped regions and semiconductor devices including the sameOH CHANGWOO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →