Inventor · disambiguated record
Chang-Woo Oh
Also filed as: OH CHANG-WOO
57 granted patents·20 pending applications·804 citations·filing 2004–2022
99Inventor score
Top patents by PatentIndex Score
77 records- 0197US7442988B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·50 cites·19 claims
- 0297US7402493B2Method for forming non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 22, 2008·35 cites·23 claims
- 0397US7332386B2Methods of fabricating fin field transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·56 cites·16 claims
- 0497US7297600B2Methods of forming fin field effect transistors using oxidation barrier layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 20, 2007·135 cites·17 claims
- 0596US9287402B2Method of fabricating fin-field effect transistors (finFETs) having different fin widthsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 15, 2016·20 cites·31 claims
- 0696US8466511B2Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the sameOH CHANG-WOO·Filed 2009·Granted Jun 18, 2013·31 cites·20 claims
- 0796US8101475B2Field effect transistor and method for manufacturing the sameOH CHANG-WOO·Filed 2009·Granted Jan 24, 2012·48 cites·15 claims
- 0896US7745871B2Fin field effect transistors including oxidation barrier layersOH CHANG-WOO·Filed 2007·Granted Jun 29, 2010·46 cites·8 claims
- 0995US9443935B2Method of fabricating fin-field effect transistors (finFETs) having different fin widthsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 13, 2016·13 cites·20 claims
- 1095US7361545B2Field effect transistor with buried gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·26 cites·12 claims
- 1194US9324850B2Integrated circuit devices and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·15 cites·14 claims
- 1294US8815702B2Methods of manufacturing semiconductor devices having a support structure for an active layer patternSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 26, 2014·13 cites·23 claims
- 1393US8987100B2Method of fabricating fin-field effect transistors (finfets) having different fin widthsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 24, 2015·14 cites·19 claims
- 1493US7396726B2Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·21 cites·18 claims
- 1593US7271456B2Semiconductor devices including stress inducing layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·19 cites·38 claims
- 1690US9490177B2Integrated circuit devices including stress proximity effects and methods of fabricating the sameOH CHANG-WOO·Filed 2012·Granted Nov 8, 2016·14 cites·37 claims
- 1790US7851859B2Single transistor memory device having source and drain insulating regions and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 14, 2010·17 cites·16 claims
- 1890US7605025B2Methods of forming MOSFETS using crystalline sacrificial structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 20, 2009·14 cites·15 claims
- 1989US7800172B2Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·14 cites·7 claims
- 2088US7247896B2Semiconductor devices having a field effect transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·25 cites·15 claims
- 2188US7161206B2Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 9, 2007·33 cites·17 claims
- 2287US9673099B2Method of fabricating integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 6, 2017·4 cites·5 claims
- 2383US7601592B2Method for forming multi-gate non-volatile memory devices using a damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 13, 2009·6 cites·10 claims
- 2483US7341912B2Split gate flash memory device having self-aligned control gate and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 11, 2008·8 cites·18 claims
- 2582US7859064B1Semiconductor devices including channel and junction regions of different semiconductor materialsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 28, 2010·6 cites·13 claims
- 2682US7419879B2Transistor having gate dielectric layer of partial thickness difference and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·6 cites·23 claims
- 2781US8178924B2Semiconductor device having floating body element and bulk body elementOH CHANG-WOO·Filed 2008·Granted May 15, 2012·7 cites·19 claims
- 2879US7535051B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·7 cites·14 claims
- 2978US7122431B2Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·20 cites·18 claims
- 3076US8415210B2Field effect transistor and method for manufacturing the sameOH CHANG-WOO·Filed 2011·Granted Apr 9, 2013·3 cites·21 claims
- 3176US7652322B2Split gate flash memory device having self-aligned control gate and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 26, 2010·5 cites·22 claims
- 3272USRE49988EIntegrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 28, 2024·0 cites·44 claims
- 3372US8426901B2Semiconductor devices having a support structure for an active layer patternOH CHANG-WOO·Filed 2011·Granted Apr 23, 2013·2 cites·10 claims
- 3472US7952151B2Semiconductor devices including fin shaped semiconductor regions and stress inducing layersSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 31, 2011·2 cites·9 claims
- 3572US7575964B2Semiconductor device employing buried insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·4 cites·12 claims
- 3672US7541645B2Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·9 claims
- 3771US7883969B2Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·2 cites·18 claims
- 3871US7618864B2Nonvolatile memory device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 17, 2009·4 cites·14 claims
- 3970US7816228B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 19, 2010·5 cites·18 claims
- 4069US7510932B2Semiconductor devices having a field effect transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·8 cites·19 claims
- 4168US7709308B2Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewallsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·3 cites·13 claims
- 4267US7265031B2Methods of fabricating semiconductor-on-insulator (SOI) substrates and semiconductor devices using sacrificial layers and void spacesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 4, 2007·10 cites·41 claims
- 4366US8461653B2Semiconductor devices including fin shaped semiconductor regions and stress inducing layersOH CHANG-WOO·Filed 2011·Granted Jun 11, 2013·1 cites·19 claims
- 4466US7989854B2Semiconductor devices having a support structure for an active layer patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 2, 2011·2 cites·19 claims
- 4564US7316968B2Methods of forming semiconductor devices having multiple channel MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 8, 2008·9 cites·33 claims
- 4661US11419185B2Heater for cigarette-type electronic cigarette deviceAMOSENSE CO LTD·Filed 2018·Granted Aug 16, 2022·1 cites·19 claims
- 4760US7816725B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 19, 2010·1 cites·18 claims
- 4859US6951785B2Methods of forming field effect transistors including raised source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 4, 2005·6 cites·27 claims
- 4959US2009065850A1Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 5058US7321144B2Semiconductor device employing buried insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 22, 2008·6 cites·12 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →