Inventor · disambiguated record
Christof Streck
Also filed as: STRECK CHRISTOF
23 granted patents·5 pending applications·643 citations·filing 1998–2014
95Inventor score
Files withADVANCED MICRO DEVICES INC10STRECK CHRISTOF6GLOBALFOUNDRIES INC4KAHLERT VOLKER2HOHAGE JOERG1
Top patents by PatentIndex Score
28 records- 0198US7829460B2Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitrideGLOBALFOUNDRIES INC·Filed 2007·Granted Nov 9, 2010·467 cites·12 claims
- 0285US8222135B2Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitrideSTRECK CHRISTOF·Filed 2010·Granted Jul 17, 2012·6 cites·8 claims
- 0385US6066574AHot plate cure process for BCB low k interlevel dielectricADVANCED MICRO DEVICES INC·Filed 1998·Granted May 23, 2000·75 cites·20 claims
- 0483US8384217B2Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitrideGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 26, 2013·4 cites·15 claims
- 0579US8432035B2Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devicesKAHLERT VOLKER·Filed 2011·Granted Apr 30, 2013·5 cites·16 claims
- 0679US7638428B2Semiconductor structure and method of forming the sameGLOBALFOUNDRIES INC·Filed 2007·Granted Dec 29, 2009·6 cites·23 claims
- 0775US7413985B2Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Aug 19, 2008·6 cites·20 claims
- 0872US8084354B2Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devicesKAHLERT VOLKER·Filed 2009·Granted Dec 27, 2011·5 cites·20 claims
- 0970US6746927B2Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 8, 2004·15 cites·36 claims
- 1069US8772178B2Technique for forming a dielectric interlayer above a structure including closely spaced linesRUELKE HARTMUT·Filed 2005·Granted Jul 8, 2014·5 cites·29 claims
- 1167US6317642B1Apparatus and methods for uniform scan dispensing of spin-on materialsADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 13, 2001·32 cites·22 claims
- 1266US8105943B2Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniquesSTRECK CHRISTOF·Filed 2009·Granted Jan 31, 2012·3 cites·20 claims
- 1365US7544551B2Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radiusADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 9, 2009·3 cites·21 claims
- 1463US8741787B2Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatmentMAYER ULRICH·Filed 2010·Granted Jun 3, 2014·1 cites·26 claims
- 1556US6927161B2Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene techniqueADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 9, 2005·8 cites·29 claims
- 1651US8124532B2Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layerSTRECK CHRISTOF·Filed 2009·Granted Feb 28, 2012·0 cites·16 claims
- 1748US7595269B2Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 29, 2009·0 cites·14 claims
- 1844US2008099918A1Semiconductor device including a porous low-k material layer stack with reduced uv sensitivitySTRECK CHRISTOF·Filed 2007·Application pending·0 cites
- 1943US7687398B2Technique for forming nickel silicide by depositing nickel from a gaseous precursorADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 30, 2010·0 cites·26 claims
- 2042US7384877B2Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidationADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 10, 2008·0 cites·21 claims
- 2142US7307026B2Method of forming an epitaxial layer for raised drain and source regions by removing contaminationsADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 11, 2007·2 cites·10 claims
- 2241US2008203487A1Field effect transistor having an interlayer dielectric material having increased intrinsic stressHOHAGE JOERG·Filed 2007·Application pending·0 cites
- 2341US2003200984A1Highly efficient remote clean process for process chambers in deposition toolsFiled 2002·Application pending·0 cites
- 2440US8569143B2Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI)KAMMLER THORSTEN·Filed 2011·Granted Oct 29, 2013·0 cites·16 claims
- 2539US8609555B2Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfacesSTRECK CHRISTOF·Filed 2011·Granted Dec 17, 2013·0 cites·15 claims
- 2637US2004121265A1Technique for reducing resist poisoning in forming a metallization layer including a low-k dielectricFiled 2003·Application pending·0 cites
- 2736US9443723B2Integrated circuits with an insultating layer and methods for producing such integrated circuitsGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 13, 2016·0 cites·17 claims
- 2835US2006043588A1Semiconductor device including a low-k metallization layer stack for enhanced resistance against electromigrationSTRECK CHRISTOF·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →