Inventor · disambiguated record
Chih-Jung Wang
Also filed as: WANG CHIH-JUNG
20 granted patents·4 pending applications·140 citations·filing 1999–2022
94Inventor score
Files withUNITED MICROELECTRONICS CORP11WANG CHIH-JUNG5CHEN TONG-YU3ASUSTEK COMP INC1CINKASA PREC INDUSTRIAL CO LTD1
Top patents by PatentIndex Score
24 records- 0197US11205609B2Semiconductor structure with an air gapUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 21, 2021·7 cites·13 claims
- 0291US8426283B1Method of fabricating a double-gate transistor and a tri-gate transistor on a common substrateWANG CHIH-JUNG·Filed 2011·Granted Apr 23, 2013·16 cites·15 claims
- 0384US7531448B2Manufacturing method of dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 12, 2009·12 cites·36 claims
- 0483US9012975B2Field effect transistor and manufacturing method thereofCHEN TONG-YU·Filed 2012·Granted Apr 21, 2015·5 cites·10 claims
- 0583US8871575B2Method of fabricating field effect transistor with fin structureWANG CHIH-JUNG·Filed 2011·Granted Oct 28, 2014·6 cites·12 claims
- 0683US8698199B2FinFET structureCHEN TONG-YU·Filed 2012·Granted Apr 15, 2014·7 cites·10 claims
- 0783US7811930B2Manufacturing method of dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2009·Granted Oct 12, 2010·10 cites·14 claims
- 0883US6605545B2Method for forming hybrid low-K film stack to avoid thermal stress effectUNITED MICROELECTRONICS CORP·Filed 2001·Granted Aug 12, 2003·32 cites·17 claims
- 0981US9006107B2Patterned structure of semiconductor device and fabricating method thereofWANG CHIH-JUNG·Filed 2012·Granted Apr 14, 2015·4 cites·11 claims
- 1078US9871123B2Field effect transistor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 16, 2018·2 cites·10 claims
- 1176US8946078B2Method of forming trench in semiconductor substrateCHEN TONG-YU·Filed 2012·Granted Feb 3, 2015·3 cites·12 claims
- 1269US9607575B2Display mode adjusting method of display device and display mode adjusting module thereofASUSTEK COMP INC·Filed 2014·Granted Mar 28, 2017·1 cites·9 claims
- 1369US6972259B2Method for forming openings in low dielectric constant material layerUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 6, 2005·9 cites·14 claims
- 1465US8803247B2Fin-type field effect transistorWANG CHIH-JUNG·Filed 2011·Granted Aug 12, 2014·2 cites·7 claims
- 1563US11848253B2Semiconductor structure with an air gapUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 19, 2023·0 cites·10 claims
- 1659US8946031B2Method for fabricating MOS deviceWANG CHIH-JUNG·Filed 2012·Granted Feb 3, 2015·1 cites·8 claims
- 1758US9214384B2Method of forming trench in semiconductor substrateUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·0 cites·13 claims
- 1857US6124200AMethod of fabricating an unlanded viaUTEK SEMICONDUCTOR CORP·Filed 1999·Granted Sep 26, 2000·23 cites·20 claims
- 1950US2014374841A1Field effect transistor with fin structureUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2046US2015179652A1Patterned structure of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2144US2005110152A1Method for forming openings in low dielectric constant material layerUNITED MICROELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 2244US2009003226A1Network intermediary device with connection test packetsMOXA NETWORKING CO LTD·Filed 2007·Application pending·0 cites
- 2337US12070823B2Horizontal assembly press apparatusCINKASA PREC INDUSTRIAL CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·8 claims
- 2430US8603366B2Electrical contact material of silver matrix capable of resisting arc erosion and containing no cadmium-compositeHUNG CHIN-WEI·Filed 2010·Granted Dec 10, 2013·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →