Inventor · disambiguated record
Chun Yu Wong
Also filed as: WONG CHUN YU
21 granted patents·5 pending applications·55 citations·filing 2012–2022
92Inventor score
Files withGLOBALFOUNDRIES INC18GLOBALFOUNDRIES US INC2HAYCO MFG LIMITED2HEFECHIP CORPORATION LTD2PROCTER & GAMBLE1
Top patents by PatentIndex Score
26 records- 0195US10475791B1Transistor fins with different thickness gate dielectricGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·12 cites·13 claims
- 0292US10418285B1Fin field-effect transistor (FinFET) and method of production thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·8 cites·16 claims
- 0386US9508795B2Methods of fabricating nanowire structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 29, 2016·5 cites·19 claims
- 0482US10804199B2Self-aligned chamferless interconnect structures of semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 13, 2020·4 cites·10 claims
- 0578US8637993B23D integrated circuit system with connecting via structure and method for forming the sameWONG CHUN YU·Filed 2012·Granted Jan 28, 2014·7 cites·19 claims
- 0676US11018221B2Air gap regions of a semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2019·Granted May 25, 2021·2 cites·12 claims
- 0774US10510662B2Vertically oriented metal silicide containing e-fuse device and methods of making sameGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 17, 2019·1 cites·18 claims
- 0874US9706832B2Dispensers and applicator heads thereforPROCTER & GAMBLE·Filed 2013·Granted Jul 18, 2017·7 cites·14 claims
- 0969US10439026B2Fins with single diffusion break facet improvement using epitaxial insulatorGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 8, 2019·1 cites·18 claims
- 1069US9601428B2Semiconductor fuses with nanowire fuse links and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·1 cites·12 claims
- 1168US10468481B2Self-aligned single diffusion break isolation with reduction of strain lossGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 5, 2019·1 cites·10 claims
- 1267US9455188B2Through silicon via device having low stress, thin film gaps and methods for forming the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 27, 2016·2 cites·11 claims
- 1364US9245790B2Integrated circuits and methods of forming the same with multiple embedded interconnect connection to same through-semiconductor viaGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 26, 2016·2 cites·8 claims
- 1461US10879171B2Vertically oriented metal silicide containing e-fuse deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 29, 2020·0 cites·18 claims
- 1560US2023075071A1Electric ToothbrushHAYCO MFG LIMITED·Filed 2022·Application pending·0 cites
- 1658US9761481B2Integrated circuits and methods of forming the same with metal layer connection to through-semiconductor viaGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 12, 2017·2 cites·7 claims
- 1756US10332834B2Semiconductor fuses with nanowire fuse links and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 25, 2019·0 cites·5 claims
- 1852US2023290855A1Transistor structure having an air spacer and method for making the sameHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 1951US10043764B2Through silicon via device having low stress, thin film gaps and methods for forming the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 7, 2018·0 cites·8 claims
- 2050US10636894B2Fin-type transistors with spacers on the gatesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 2150US2023317526A1Method to form semiconductor device and semiconductor device thereofHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 2249US11171036B2Preventing dielectric void over trench isolation regionGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·0 cites·15 claims
- 2345US10910276B1STI structure with liner along lower portion of longitudinal sides of active region, and related FET and methodGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 2442US2019117027A1Surface cleaning apparatusHAYCO MFG LIMITED·Filed 2017·Application pending·0 cites
- 2539US10461029B2Hybrid material electrically programmable fuse and methods of formingGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 29, 2019·0 cites·9 claims
- 2638US2019067474A1Vertical finfet with improved top source/drain contactGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →