Inventor · disambiguated record
Chan-Lon Yang
Also filed as: YANG CHAN-LON
127 granted patents·26 pending applications·3,663 citations·filing 1990–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD59UNITED MICROELECTRONICS CORP33APPLIED MATERIALS INC23CYPRESS SEMICONDUCTOR CORP10YANG CHAN-LON10
Top patents by PatentIndex Score
153 records- 0199US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0298US11335606B2Power rails for stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·8 cites·20 claims
- 0397US11960210B2Laser interference fringe control for higher EUV light source and EUV throughputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·2 cites·20 claims
- 0497US6518195B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·162 cites·8 claims
- 0597US5556501ASilicon scavenger in an inductively coupled RF plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted Sep 17, 1996·396 cites·15 claims
- 0696US11592749B2Laser interference fringe control for higher EUV light source and EUV throughputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 0796US8324059B2Method of fabricating a semiconductor structureGUO TED MING-LANG·Filed 2011·Granted Dec 4, 2012·97 cites·11 claims
- 0896US6488807B1Magnetic confinement in a plasma reactor having an RF bias electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Dec 3, 2002·145 cites·6 claims
- 0996US5300460AUHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafersAPPLIED MATERIALS INC·Filed 1993·Granted Apr 5, 1994·109 cites·26 claims
- 1096US5210466AVHF/UHF reactor systemAPPLIED MATERIALS INC·Filed 1992·Granted May 11, 1993·124 cites·17 claims
- 1195US11437371B2Field effect transistors with negative capacitance layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·3 cites·20 claims
- 1295US5888414APlasma reactor and processes using RF inductive coupling and scavenger temperature controlAPPLIED MATERIALS INC·Filed 1997·Granted Mar 30, 1999·203 cites·31 claims
- 1395US5423945ASelectivity for etching an oxide over a nitrideAPPLIED MATERIALS INC·Filed 1992·Granted Jun 13, 1995·220 cites·22 claims
- 1495US5312778AMethod for plasma processing using magnetically enhanced plasma chemical vapor depositionAPPLIED MATERIALS INC·Filed 1990·Granted May 17, 1994·111 cites·15 claims
- 1594US10026843B2Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 17, 2018·7 cites·20 claims
- 1694US6209484B1Method and apparatus for depositing an etch stop layerAPPLIED MATERIALS INC·Filed 2000·Granted Apr 3, 2001·74 cites·19 claims
- 1793US6545420B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 1995·Granted Apr 8, 2003·135 cites·13 claims
- 1893US6068784AProcess used in an RF coupled plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted May 30, 2000·173 cites·28 claims
- 1992US11276604B1Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·20 claims
- 2092US6444137B1Method for processing substrates using gaseous silicon scavengerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 3, 2002·127 cites·19 claims
- 2192US6251792B1Plasma etch processesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 26, 2001·122 cites·18 claims
- 2291US11150559B2Laser interference fringe control for higher EUV light source and EUV throughputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·2 cites·20 claims
- 2391US10164096B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·5 cites·20 claims
- 2491US2025331222A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2590US10868139B2Controlling profiles of replacement gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·18 claims
- 2690US10658468B2Epitaxial growth methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 2790US9166020B2Metal gate structure and manufacturing method thereofYANG CHAN-LON·Filed 2011·Granted Oct 20, 2015·11 cites·8 claims
- 2890US6024826APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Feb 15, 2000·100 cites·68 claims
- 2989US11594616B2Field effect transistor with negative capacitance dielectric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
- 3089US2025329544A1Plasma-assisted etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3188US6426298B1Method of patterning a dual damasceneUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 30, 2002·52 cites·12 claims
- 3288US2025331092A1Extreme ultraviolet radiation source, method of generating extreme ultraviolet radiation, and method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3387US2024297252A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3486US11502199B2Independent control of stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 3586US11489074B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 3686US10749029B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 3786US6890859B1Methods of forming semiconductor structures having reduced defects, and articles and devices formed therebyCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted May 10, 2005·38 cites·30 claims
- 3886US6399514B1High temperature silicon surface providing high selectivity in an oxide etch processAPPLIED MATERIALS INC·Filed 2000·Granted Jun 4, 2002·30 cites·23 claims
- 3986US6184142B1Process for low k organic dielectric film etchUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 6, 2001·81 cites·18 claims
- 4085US12408367B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 4185US12389518B2Method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 4285US12317535B2Independent control of stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 4385US11282711B2Plasma-assisted etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 4485US11114547B2Field effect transistor with negative capacitance dieletric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·2 cites·20 claims
- 4585US8704294B2Semiconductor device having metal gate and manufacturing method thereofLIAO PO-JUI·Filed 2011·Granted Apr 22, 2014·7 cites·8 claims
- 4685US8574990B2Method of manufacturing semiconductor device having metal gateLIAO PO-JUI·Filed 2011·Granted Nov 5, 2013·9 cites·20 claims
- 4785US6303482B1Method for cleaning the surface of a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 16, 2001·34 cites·16 claims
- 4885US6218312B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Apr 17, 2001·61 cites·36 claims
- 4984US12363978B2Field effect transistor with negative capacitance dielectric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 5084US6635565B2Method of cleaning a dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2001·Granted Oct 21, 2003·32 cites·15 claims
Showing the top 50 of 153 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →