Inventor · disambiguated record
Cheng-Jer Yang
Also filed as: YANG CHENG-JER
15 granted patents·9 pending applications·132 citations·filing 1999–2022
87Inventor score
Files withCHANGXIN MEMORY TECH INC13NAT SCIENCE COUNCIL2PROMOS TECHNOLOGIES INC2UNITED MICROELECTRONICS CORP1YANG CHENG-JER1
Top patents by PatentIndex Score
24 records- 0186US6420092B1Low dielectric constant nanotubeFiled 1999·Granted Jul 16, 2002·117 cites·42 claims
- 0285US12033691B2Readout circuit layout structure, readout circuit, and memory layout structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 9, 2024·1 cites·17 claims
- 0362US7595467B2Fault detection system and method for managing the samePROMOS TECHNOLOGIES INC·Filed 2005·Granted Sep 29, 2009·3 cites·12 claims
- 0457US12293979B2Memory structure including elastic material based buffer column structure near contact structure to improve stability of connectionCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 6, 2025·0 cites·19 claims
- 0553US12341132B2Semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·0 cites·8 claims
- 0653US11886733B2Circuit for testing a memory and test method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 30, 2024·0 cites·11 claims
- 0752US11892502B2Through-silicon via (TSV) fault-tolerant circuit, method for TSV fault-tolerance and integrated circuit (IC)CHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 6, 2024·0 cites·14 claims
- 0851US11862269B2Testing method for packaged chip, testing system for packaged chip, computer device and storage mediumCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 2, 2024·0 cites·7 claims
- 0951US11614481B2Through-silicon via detecting circuit, detecting methods and integrated circuit thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Mar 28, 2023·0 cites·20 claims
- 1051US11340294B2Boundary test circuit, memory and boundary test methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 24, 2022·0 cites·13 claims
- 1147US11929132B2Testing method, testing system, and testing apparatus for semiconductor chipCHANGXIN MEMORY TECH INC·Filed 2021·Granted Mar 12, 2024·0 cites·10 claims
- 1247US6150217AMethod of fabricating a DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·11 cites·20 claims
- 1347US2022034939A1Method and apparatus for judging abnormality of probe cardCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 1445US11830553B2Word line drive circuit and dynamic random access memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 28, 2023·0 cites·10 claims
- 1543US11869576B2Word line driving circuit and dynamic random access memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1639US11715543B2Memory test circuit apparatus and test methodCHANGXIN MEMORY TECH INC·Filed 2020·Granted Aug 1, 2023·0 cites·18 claims
- 1737US2008231636A1Method of recognizing waveforms and dynamic fault detection method using the samePROMOS TECHNOLOGIES INC·Filed 2007·Application pending·0 cites
- 1836US2008223299A1System for detecting plasma reaction and method for using the sameYANG CHENG-JER·Filed 2007·Application pending·0 cites
- 1935US2002102805A1Method for forming shallow junctionFiled 2001·Application pending·0 cites
- 2035US2002072248A1Process of forming a low dielectric constant materialNAT SCIENCE COUNCIL·Filed 2001·Application pending·0 cites
- 2135US2002100895A1Chemical mechanical polishing slurryFiled 2001·Application pending·0 cites
- 2235US2002132413A1Method of fabricating a MOS transistorFiled 2001·Application pending·0 cites
- 2333US2003082881A1Method for manufacturing a self-aligned MOS transistorFiled 2002·Application pending·0 cites
- 2433US2002101252A1Structure for capacitance measurementNAT SCIENCE COUNCIL·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →