Inventor · disambiguated record
Chentsau Ying
Also filed as: YING CHENTSAU · YING CHENTSAU CHRIS
33 granted patents·5 pending applications·707 citations·filing 1999–2019
97Inventor score
Top patents by PatentIndex Score
38 records- 0198US9865484B1Selective etch using material modification and RF pulsingAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·109 cites·14 claims
- 0297US9484202B1Apparatus and methods for spacer deposition and selective removal in an advanced patterning processAPPLIED MATERIALS INC·Filed 2015·Granted Nov 1, 2016·22 cites·18 claims
- 0397US9190290B2Halogen-free gas-phase silicon etchAPPLIED MATERIALS INC·Filed 2014·Granted Nov 17, 2015·97 cites·15 claims
- 0496US10249495B2Diamond like carbon layer formed by an electron beam plasma processAPPLIED MATERIALS INC·Filed 2016·Granted Apr 2, 2019·17 cites·16 claims
- 0595US6759263B2Method of patterning a layer of magnetic materialFiled 2002·Granted Jul 6, 2004·109 cites·24 claims
- 0692US9852916B2Single platform, multiple cycle spacer deposition and etchAPPLIED MATERIALS INC·Filed 2016·Granted Dec 26, 2017·7 cites·12 claims
- 0789US9502262B2Nanocrystalline diamond carbon film for 3D NAND hardmask applicationAPPLIED MATERIALS INC·Filed 2015·Granted Nov 22, 2016·5 cites·18 claims
- 0888US6964928B2Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual maskYING CHENTSAU·Filed 2002·Granted Nov 15, 2005·52 cites·20 claims
- 0986US9640385B2Gate electrode material residual removal processAPPLIED MATERIALS INC·Filed 2016·Granted May 2, 2017·4 cites·19 claims
- 1086US6984585B2Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layerAPPLIED MATERIALS INC·Filed 2002·Granted Jan 10, 2006·36 cites·26 claims
- 1183US6841484B2Method of fabricating a magneto-resistive random access memory (MRAM) deviceFiled 2003·Granted Jan 11, 2005·29 cites·15 claims
- 1281US6919168B2Masking methods and etching sequences for patterning electrodes of high density RAM capacitorsAPPLIED MATERIALS INC·Filed 2002·Granted Jul 19, 2005·31 cites·28 claims
- 1380US11056406B2Stack of multiple deposited semiconductor layersAPPLIED MATERIALS INC·Filed 2019·Granted Jul 6, 2021·2 cites·12 claims
- 1480US9865464B2Nanocrystalline diamond carbon film for 3D NAND hardmask applicationAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·2 cites·20 claims
- 1579US9406522B2Single platform, multiple cycle spacer deposition and etchAPPLIED MATERIALS INC·Filed 2014·Granted Aug 2, 2016·3 cites·19 claims
- 1679US6942813B2Method of etching magnetic and ferroelectric materials using a pulsed bias sourceAPPLIED MATERIALS INC·Filed 2003·Granted Sep 13, 2005·21 cites·23 claims
- 1777US7320942B2Method for removal of metallic residue after plasma etching of a metal layerAPPLIED MATERIALS INC·Filed 2002·Granted Jan 22, 2008·19 cites·19 claims
- 1876US6933239B2Method for removing conductive residueAPPLIED MATERIALS INC·Filed 2003·Granted Aug 23, 2005·19 cites·10 claims
- 1973US6323132B1Etching methods for anisotropic platinum profileAPPLIED MATERIALS INC·Filed 1999·Granted Nov 27, 2001·36 cites·27 claims
- 2072US10490467B2Methods of forming a stack of multiple deposited semiconductor layersAPPLIED MATERIALS INC·Filed 2018·Granted Nov 26, 2019·1 cites·12 claims
- 2172US7105361B2Method of etching a magnetic materialAPPLIED MATERIALS INC·Filed 2003·Granted Sep 12, 2006·14 cites·22 claims
- 2270US6541380B2Plasma etching process for metals and metal oxides, including metals and metal oxides inert to oxidationAPPLIED MATERIALS INC·Filed 2001·Granted Apr 1, 2003·13 cites·25 claims
- 2365US6943039B2Method of etching ferroelectric layersAPPLIED MATERIALS INC·Filed 2003·Granted Sep 13, 2005·9 cites·78 claims
- 2465US6579796B2Method of etching platinum using a silicon carbide maskAPPLIED MATERIALS INC·Filed 2001·Granted Jun 17, 2003·9 cites·43 claims
- 2563US6265318B1Iridium etchant methods for anisotropic profileAPPLIED MATERIALS INC·Filed 1999·Granted Jul 24, 2001·30 cites·140 claims
- 2660US6911346B2Method of etching a magnetic materialAPPLIED MATERIALS INC·Filed 2003·Granted Jun 28, 2005·7 cites·38 claims
- 2759US9382625B2Remote plasma source based cyclic CVD process for nanocrystalline diamond depositionAPPLIED MATERIALS INC·Filed 2014·Granted Jul 5, 2016·0 cites·20 claims
- 2856US12057329B2Selective etch using material modification and RF pulsingAPPLIED MATERIALS INC·Filed 2017·Granted Aug 6, 2024·0 cites·10 claims
- 2956US6749770B2Method of etching an anisotropic profile in platinumFiled 2001·Granted Jun 15, 2004·4 cites·19 claims
- 3055US2019228970A1Diamond like carbon layer formed by an electron beam plasma processAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3153US10964527B2Residual removalAPPLIED MATERIALS INC·Filed 2019·Granted Mar 30, 2021·0 cites·19 claims
- 3252US11114333B2Method for depositing and reflow of a high quality etch resistant gapfill dielectric filmMICROMATERIALS LLC·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 3346US10570506B2Method to improve film quality for PVD carbon with reactive gas and bias powerAPPLIED MATERIALS INC·Filed 2017·Granted Feb 25, 2020·0 cites·13 claims
- 3440US2004242005A1Method of etching metal layersFiled 2004·Application pending·0 cites
- 3538US10858727B2High density, low stress amorphous carbon film, and process and equipment for its depositionAPPLIED MATERIALS INC·Filed 2017·Granted Dec 8, 2020·0 cites·9 claims
- 3638US2004026369A1Method of etching magnetic materialsFiled 2002·Application pending·0 cites
- 3734US2003176073A1Plasma etching of Ir and PZT using a hard mask and C12/N2/O2 and C12/CHF3/O2 chemistryFiled 2002·Application pending·0 cites
- 3832US2003013314A1Method of reducing particulates in a plasma etch chamber during a metal etch processFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →