Diamond like carbon layer formed by an electron beam plasma process

Abstract

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

What is claimed is: 
     
         1 . A hardmask layer comprising a diamond like carbon layer formed on a substrate by bombarding an electrode to provide secondary electrons and a secondary electron beam flux to a surface of the substrate, wherein the diamond like carbon layer serves as a hardmask in an etching process for use in semiconductor applications. 
     
     
         2 . The hardmask layer  claim 1 , further comprising a material layer disposed between the diamond like carbon layer and the substrate. 
     
     
         3 . The hardmask layer of  claim 2 , wherein the material layer comprises a dielectric material. 
     
     
         4 . The hardmask layer of  claim 3 , wherein the dielectric material is selected from a group consisting of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, low-k and porous dielectric material. 
     
     
         5 . The hardmask layer of  claim 2 , wherein the the material layer is a film stack of repeating layers of silicon oxide and/or silicon nitride layers. 
     
     
         6 . The hardmask layer of  claim 2 , wherein the material layer is a silicon material utilized to form a gate structure. 
     
     
         7 . The hardmask layer of  claim 2 , wherein the material layer is utilized to form a contact structure. 
     
     
         8 . The hardmask layer of  claim 2 , wherein the material layer is utilized to form an interconnection structure. 
     
     
         9 . The hardmask layer of  claim 2 , wherein the material layer is utilized as shallow trench isolation (STI) structure. 
     
     
         10 . . The hardmask layer of  claim 2 , wherein the material layer is utilized in front end or back end processes for logic or memory devices. 
     
     
         11 . The hardmask layer of  claim 2 , wherein the material layer comprises a silicon oxide layer deposited over a silicon layer. 
     
     
         12 . The hardmask layer of  claim 1  wherein the diamond like carbon layer has a film density greater than 2.5 g/cc. 
     
     
         13 . The hardmask layer of  claim 1 , wherein an absorption coefficient (k) of the diamond like carbon layer is between about 0.2 and about 1.8 at a wavelength about 633 nm. 
     
     
         14 . The hardmask layer of  claim 1 , wherein an absorption coefficient (k) of the diamond like carbon layer is between about 0.4 and about 1.3 at a wavelength about 243 nm. 
     
     
         15 . The hardmask layer of  claim 1 , wherein an absorption coefficient (k) of the diamond like carbon layer is between about and between about 0.3 and about 0.6 at a wavelength about 193 nm. 
     
     
         16 . The hardmask layer of  claim 1 , wherein the diamond like carbon layer has a thickness between about 10 nm and about 300 nm. 
     
     
         17 . The hardmask layer of  claim 1  wherein the diamond like layer has a compressive film stress less than 800 mega-pascal (MPa).