Inventor · disambiguated record
Kenneth S. Collins
Also filed as: COLLINS KENNETH · COLLINS KENNETH S
239 granted patents·78 pending applications·21,639 citations·filing 1986–2024
99Inventor score
Top patents by PatentIndex Score
317 records- 0199US7695590B2Chemical vapor deposition plasma reactor having plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 13, 2010·195 cites·31 claims
- 0299US7429532B2Semiconductor substrate process using an optically writable carbon-containing maskAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·539 cites·18 claims
- 0399US7422775B2Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·535 cites·17 claims
- 0499US7393765B2Low temperature CVD process with selected stress of the CVD layer on CMOS devicesAPPLIED MATERIALS INC·Filed 2007·Granted Jul 1, 2008·562 cites·16 claims
- 0599US7335611B2Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layerAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·535 cites·20 claims
- 0699US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard maskAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·580 cites·17 claims
- 0799US7312148B2Copper barrier reflow process employing high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·537 cites·21 claims
- 0899US7312162B2Low temperature plasma deposition process for carbon layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·544 cites·19 claims
- 0999US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 19, 2006·551 cites·15 claims
- 1099US5362526APlasma-enhanced CVD process using TEOS for depositing silicon oxideAPPLIED MATERIALS INC·Filed 1991·Granted Nov 8, 1994·484 cites·15 claims
- 1199US5000113AThermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1986·Granted Mar 19, 1991·1.1k cites·19 claims
- 1299US4892753AProcess for PECVD of silicon oxide using TEOS decompositionAPPLIED MATERIALS INC·Filed 1988·Granted Jan 9, 1990·503 cites·12 claims
- 1399US4872947ACVD of silicon oxide using TEOS decomposition and in-situ planarization processAPPLIED MATERIALS INC·Filed 1988·Granted Oct 10, 1989·522 cites·14 claims
- 1498US11814724B2Continuous liner for use in a processing chamberAPPLIED MATERIALS INC·Filed 2022·Granted Nov 14, 2023·2 cites·19 claims
- 1598US11651966B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Granted May 16, 2023·6 cites·9 claims
- 1698US11587766B2Symmetric VHF source for a plasma reactorAPPLIED MATERIALS INC·Filed 2021·Granted Feb 21, 2023·4 cites·15 claims
- 1798US10580620B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Mar 3, 2020·38 cites·17 claims
- 1898US10546728B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Jan 28, 2020·39 cites·11 claims
- 1998US10535502B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Jan 14, 2020·35 cites·14 claims
- 2098US10453656B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Oct 22, 2019·36 cites·15 claims
- 2198US10312056B2Distributed electrode array for plasma processingAPPLIED MATERIALS INC·Filed 2018·Granted Jun 4, 2019·39 cites·20 claims
- 2298US9741546B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2012·Granted Aug 22, 2017·385 cites·17 claims
- 2398US8496756B2Methods for processing substrates in process systems having shared resourcesCRUSE JAMES P·Filed 2010·Granted Jul 30, 2013·518 cites·20 claims
- 2498US8367227B2Plasma-resistant ceramics with controlled electrical resistivityAPPLIED MATERIALS INC·Filed 2007·Granted Feb 5, 2013·71 cites·8 claims
- 2598US8034734B2Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatusAPPLIED MATERIALS INC·Filed 2010·Granted Oct 11, 2011·90 cites·10 claims
- 2698US8018164B2Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sourcesAPPLIED MATERIALS INC·Filed 2008·Granted Sep 13, 2011·47 cites·18 claims
- 2798US7967944B2Method of plasma load impedance tuning by modulation of an unmatched low power RF generatorAPPLIED MATERIALS INC·Filed 2008·Granted Jun 28, 2011·57 cites·16 claims
- 2898US7696117B2Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmasAPPLIED MATERIALS INC·Filed 2007·Granted Apr 13, 2010·132 cites·35 claims
- 2998US7291360B2Chemical vapor deposition plasma process using plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Nov 6, 2007·186 cites·62 claims
- 3098US7244474B2Chemical vapor deposition plasma process using an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Jul 17, 2007·195 cites·70 claims
- 3198US7094670B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Aug 22, 2006·79 cites·23 claims
- 3298US6348126B1Externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Feb 19, 2002·121 cites·31 claims
- 3398US6252354B1RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT controlAPPLIED MATERIALS INC·Filed 1996·Granted Jun 26, 2001·337 cites·72 claims
- 3498US6167834B1Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1992·Granted Jan 2, 2001·367 cites·5 claims
- 3598US6095084AHigh density plasma process chamberAPPLIED MATERIALS INC·Filed 1997·Granted Aug 1, 2000·250 cites·86 claims
- 3698US6054013AParallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion densityAPPLIED MATERIALS INC·Filed 1996·Granted Apr 25, 2000·596 cites·19 claims
- 3798US5849136AHigh frequency semiconductor wafer processing apparatus and methodAPPLIED MATERIALS INC·Filed 1996·Granted Dec 15, 1998·188 cites·11 claims
- 3898US5707486APlasma reactor using UHF/VHF and RF triode source, and processAPPLIED MATERIALS INC·Filed 1996·Granted Jan 13, 1998·201 cites·19 claims
- 3998US5187454AElectronically tuned matching network using predictor-corrector control systemAPPLIED MATERIALS INC·Filed 1992·Granted Feb 16, 1993·165 cites·38 claims
- 4098US4960488AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1989·Granted Oct 2, 1990·529 cites·16 claims
- 4197US10707086B2Etching methodsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 7, 2020·40 cites·20 claims
- 4297US8858745B2Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmasSUN JENNIFER Y·Filed 2008·Granted Oct 14, 2014·50 cites·6 claims
- 4397US8758858B2Method of producing a plasma-resistant thermal oxide coatingSUN JENNIFER Y·Filed 2012·Granted Jun 24, 2014·38 cites·9 claims
- 4497US8623527B2Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxideSUN JENNIFER Y·Filed 2011·Granted Jan 7, 2014·27 cites·7 claims
- 4597US8382999B2Pulsed plasma high aspect ratio dielectric processAPPLIED MATERIALS INC·Filed 2010·Granted Feb 26, 2013·55 cites·9 claims
- 4697US8129029B2Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coatingSUN JENNIFER Y·Filed 2007·Granted Mar 6, 2012·39 cites·10 claims
- 4797US7465478B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Dec 16, 2008·39 cites·18 claims
- 4897US7291545B2Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·73 cites·20 claims
- 4997US7292428B2Electrostatic chuck with smart lift-pin mechanism for a plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·57 cites·20 claims
- 5097US6939434B2Externally excited torroidal plasma source with magnetic control of ion distributionAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·72 cites·48 claims
Showing the top 50 of 317 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →