Inventor · disambiguated record
Claude Ortolland
Also filed as: ORTOLLAND CLAUDE
29 granted patents·3 pending applications·135 citations·filing 2011–2024
96Inventor score
Files withIBM18GLOBALFOUNDRIES INC6GLOBALFOUNDRIES US INC3CIRRUS LOGIC INT SEMICONDUCTOR LTD2TESSERA INC2
Top patents by PatentIndex Score
32 records- 0197US9577061B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Feb 21, 2017·11 cites·4 claims
- 0297US9570354B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Feb 14, 2017·12 cites·14 claims
- 0397US9412667B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2014·Granted Aug 9, 2016·22 cites·17 claims
- 0496US11145725B2Heterojunction bipolar transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 12, 2021·4 cites·20 claims
- 0596US9859122B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Jan 2, 2018·7 cites·7 claims
- 0696US9685379B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jun 20, 2017·9 cites·8 claims
- 0796US9543213B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jan 10, 2017·10 cites·12 claims
- 0895US9768071B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Sep 19, 2017·6 cites·16 claims
- 0995US9559010B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jan 31, 2017·7 cites·7 claims
- 1094US9922831B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Mar 20, 2018·5 cites·9 claims
- 1194US9721843B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Aug 1, 2017·6 cites·13 claims
- 1292US10367072B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Jul 30, 2019·3 cites·13 claims
- 1391US9269786B2Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistorsGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 23, 2016·13 cites·20 claims
- 1490US9837319B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Dec 5, 2017·3 cites·13 claims
- 1584US10374048B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Aug 6, 2019·1 cites·10 claims
- 1683US10170304B1Self-aligned nanotube structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·3 cites·20 claims
- 1781US11217685B2Heterojunction bipolar transistor with marker layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 1880US9871057B2Field-effect transistors with a non-relaxed strained channelGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 16, 2018·3 cites·20 claims
- 1979US9166014B2Gate electrode with stabilized metal semiconductor alloy-semiconductor stackIBM·Filed 2013·Granted Oct 20, 2015·4 cites·13 claims
- 2077US11101357B2Asymmetric high-k dielectric for reducing gate induced drain leakageTESSERA INC·Filed 2020·Granted Aug 24, 2021·0 cites·20 claims
- 2177US9373501B2Hydroxyl group termination for nucleation of a dielectric metallic oxideIBM·Filed 2013·Granted Jun 21, 2016·3 cites·20 claims
- 2274US10734492B2Asymmetric high-k dielectric for reducing gate induced drain leakageTESSERA INC·Filed 2019·Granted Aug 4, 2020·0 cites·13 claims
- 2369US10381452B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Aug 13, 2019·0 cites·11 claims
- 2469US9034749B2Gate electrode with stabilized metal semiconductor alloy-semiconductor stackIBM·Filed 2013·Granted May 19, 2015·2 cites·18 claims
- 2561US2025107162A1Transistor structures for minimizing subthreshold hump effectCIRRUS LOGIC INT SEMICONDUCTOR LTD·Filed 2024·Application pending·0 cites
- 2659US2025107135A1Lateral-extended transistor structures for minimizing subthreshold hump effectCIRRUS LOGIC INT SEMICONDUCTOR LTD·Filed 2024·Application pending·0 cites
- 2757US11374092B2Virtual bulk in semiconductor on insulator technologyGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 28, 2022·0 cites·17 claims
- 2849US9831084B2Hydroxyl group termination for nucleation of a dielectric metallic oxideIBM·Filed 2015·Granted Nov 28, 2017·0 cites·15 claims
- 2948US9722045B2Buffer layer for modulating Vt across devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 1, 2017·0 cites·19 claims
- 3047US9620384B2Control of O-ingress into gate stack dielectric layer using oxygen permeable layerGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 11, 2017·0 cites·10 claims
- 3138US2013087856A1Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS GateORTOLLAND CLAUDE·Filed 2011·Application pending·0 cites
- 3237US9953873B2Methods of modulating the morphology of epitaxial semiconductor materialGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 24, 2018·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →