Inventor · disambiguated record
Cory Wajda
Also filed as: WAJDA CORY · WAJDA CORY S
29 granted patents·12 pending applications·168 citations·filing 2000–2023
95Inventor score
Top patents by PatentIndex Score
41 records- 0193US6455414B1Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayersTOKYO ELECTRON LTD·Filed 2000·Granted Sep 24, 2002·65 cites·26 claims
- 0292US10068764B2Selective metal oxide deposition using a self-assembled monolayer surface pretreatmentTOKYO ELECTRON LTD·Filed 2017·Granted Sep 4, 2018·7 cites·20 claims
- 0388US11024535B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2019·Granted Jun 1, 2021·4 cites·19 claims
- 0482US10157784B2Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallizationTOKYO ELECTRON LTD·Filed 2017·Granted Dec 18, 2018·4 cites·18 claims
- 0580US7393761B2Method for fabricating a semiconductor deviceTOKYO ELECTRON LTD·Filed 2005·Granted Jul 1, 2008·7 cites·25 claims
- 0678US6974779B2Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2003·Granted Dec 13, 2005·20 cites·33 claims
- 0778US6500761B1Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatmentTOKYO ELECTRON LTD·Filed 2001·Granted Dec 31, 2002·21 cites·22 claims
- 0876US7964515B2Method of forming high-dielectric constant films for semiconductor devicesTOKYO ELECTRON LTD·Filed 2007·Granted Jun 21, 2011·5 cites·17 claims
- 0974US9607888B2Integration of ALD barrier layer and CVD Ru liner for void-free Cu fillingTOKYO ELECTRON LTD·Filed 2015·Granted Mar 28, 2017·2 cites·20 claims
- 1073US10056328B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2017·Granted Aug 21, 2018·1 cites·19 claims
- 1173US7300891B2Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiationTOKYO ELECTRON LTD·Filed 2005·Granted Nov 27, 2007·7 cites·26 claims
- 1272US10991881B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2019·Granted Apr 27, 2021·2 cites·17 claims
- 1371US11700778B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2021·Granted Jul 11, 2023·0 cites·20 claims
- 1470US9711449B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2016·Granted Jul 18, 2017·1 cites·20 claims
- 1570US7470591B2Method of forming a gate stack containing a gate dielectric layer having reduced metal contentTOKYO ELECTRON LTD·Filed 2005·Granted Dec 30, 2008·4 cites·23 claims
- 1665US7501352B2Method and system for forming an oxynitride layerTOKYO ELECTRON LTD·Filed 2005·Granted Mar 10, 2009·3 cites·163 claims
- 1764US11621190B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 1863US12482667B2Thermal etching of rutheniumTOKYO ELECTRON LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 1959US7517814B2Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrentlyTOKYO ELECTRON LTD·Filed 2005·Granted Apr 14, 2009·2 cites·37 claims
- 2055US12237216B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·21 claims
- 2155US8722548B2Structures and techniques for atomic layer depositionAOYAMA SHINTARO·Filed 2010·Granted May 13, 2014·1 cites·15 claims
- 2254US7235440B2Formation of ultra-thin oxide layers by self-limiting interfacial oxidationIBM·Filed 2003·Granted Jun 26, 2007·5 cites·12 claims
- 2352US8460945B2Method for monitoring status of system componentsO'MEARA DAVID L·Filed 2003·Granted Jun 11, 2013·2 cites·4 claims
- 2451US7419702B2Method for processing a substrateTOKYO ELECTRON LTD·Filed 2004·Granted Sep 2, 2008·1 cites·18 claims
- 2550US10700009B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 2649US2011065287A1Pulsed chemical vapor deposition of metal-silicon-containing filmsTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2749US2022139776A1Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2848US10950460B2Method utilizing using post etch pattern encapsulationTOKYO ELECTRON LTD·Filed 2019·Granted Mar 16, 2021·0 cites·21 claims
- 2948US2017241014A1Ruthenium metal deposition method for electrical connectionsTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
- 3046US7479454B2Method and processing system for monitoring status of system componentsTOKYO ELECTRON LTD·Filed 2003·Granted Jan 20, 2009·3 cites·20 claims
- 3145US7202186B2Method of forming uniform ultra-thin oxynitride layersIBM·Filed 2003·Granted Apr 10, 2007·1 cites·30 claims
- 3244US2011220148A1Method for performing preventative maintenance in a substrate processing systemTOKYO ELECTRON LTD·Filed 2010·Application pending·0 cites
- 3343US10008564B2Method of corner rounding and trimming of nanowires by microwave plasmaTOKYO ELECTRON LTD·Filed 2016·Granted Jun 26, 2018·0 cites·19 claims
- 3440US2007065593A1Multi-source method and system for forming an oxide layerWAJDA CORY·Filed 2005·Application pending·0 cites
- 3540US2006228898A1Method and system for forming a high-k dielectric layerWAJDA CORY·Filed 2005·Application pending·0 cites
- 3640US2007066084A1Method and system for forming a layer with controllable spstial variationWAJDA CORY·Filed 2005·Application pending·0 cites
- 3739US2006068603A1A method for forming a thin complete high-permittivity dielectric layerTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 3839US2005214445A1Method and processing system for determining coating status of a ceramic substrate heaterTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 3937US2005217799A1Wafer heater assemblyTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 4036US2017084464A1Germanium-containing semiconductor device and method of formingTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 4133US2015255267A1Atomic Layer Deposition of Aluminum-doped High-k FilmsTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →