Inventor · disambiguated record

Daniel Chanemougame

Also filed as: CHANEMOUGAME DANIEL

102 granted patents·10 pending applications·734 citations·filing 2005–2025

99Inventor score

Technology areasH10W H10P H10D H01L H04L

Files withTOKYO ELECTRON LTD46 GLOBALFOUNDRIES INC42 GLOBALFOUNDRIES US INC10 IBM10 CHANEMOUGAME DANIEL1

Top patents by PatentIndex Score

112 records

0199US10510620B1Work function metal patterning for N-P space between active nanostructuresGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·126 cites·6 claims
0299US10332803B1Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of formingGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 25, 2019·83 cites·20 claims
0399US10192819B1Integrated circuit structure incorporating stacked field effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 29, 2019·76 cites·20 claims
0499US10090193B1Integrated circuit structure incorporating a stacked pair of field effect transistors and a buried interconnect and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·68 cites·20 claims
0599US10026824B1Air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·53 cites·17 claims
0698US10374040B1Method to form low resistance contactGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·48 cites·18 claims
0797US12002869B2Gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·4 cites·16 claims
0897US11631671B23D complementary metal oxide semiconductor (CMOS) device and method of forming the sameTOKYO ELECTRON LTD·Filed 2020·Granted Apr 18, 2023·5 cites·23 claims
0997US11532708B2Stacked three-dimensional field-effect transistorsTOKYO ELECTRON LTD·Filed 2021·Granted Dec 20, 2022·5 cites·12 claims
1097US11264274B2Reverse contact and silicide process for three-dimensional logic devicesTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·5 cites·20 claims
1197US10304833B1Method of forming complementary nano-sheet/wire transistor devices with same depth contactsGLOBALFOUNDRIES INC·Filed 2018·Granted May 28, 2019·19 cites·20 claims
1297US10236215B1Methods of forming gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·22 cites·19 claims
1396US11545497B2CFET SRAM bit cell with three stacked device decksTOKYO ELECTRON LTD·Filed 2020·Granted Jan 3, 2023·3 cites·18 claims
1496US10566248B1Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillarGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 18, 2020·16 cites·6 claims
1596US10304832B1Integrated circuit structure incorporating stacked field effect transistors and methodGLOBALFOUNDRIES INC·Filed 2017·Granted May 28, 2019·16 cites·15 claims
1696US10170520B1Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Jan 1, 2019·19 cites·20 claims
1796US9941162B1Self-aligned middle of the line (MOL) contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 10, 2018·13 cites·14 claims
1895US11201152B2Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistorGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 14, 2021·12 cites·5 claims
1994US10692991B2Gate-all-around field effect transistors with air-gap inner spacers and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·9 cites·7 claims
2094US9299721B2Method for making semiconductor device with different fin setsST MICROELECTRONICS INC·Filed 2014·Granted Mar 29, 2016·14 cites·26 claims
2193US12237333B2Power wall integration for multiple stacked devicesTOKYO ELECTRON LTD·Filed 2021·Granted Feb 25, 2025·2 cites·6 claims
2293US10388652B2Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 20, 2019·10 cites·14 claims
2392US11923364B2Double cross-couple for two-row flip-flop using CFETTOKYO ELECTRON LTD·Filed 2021·Granted Mar 5, 2024·2 cites·20 claims
2492US11665878B2CFET SRAM bit cell with two stacked device decksTOKYO ELECTRON LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
2592US10818792B2Nanosheet field-effect transistors formed with sacrificial spacersGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 27, 2020·8 cites·12 claims
2692US10651284B2Methods of forming gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted May 12, 2020·7 cites·18 claims
2792US10256316B1Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Apr 9, 2019·7 cites·9 claims
2892US10079173B2Methods of forming metallization lines on integrated circuit products and the resulting productsGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 18, 2018·5 cites·22 claims
2991US11488947B2Highly regular logic design for efficient 3D integrationTOKYO ELECTRON LTD·Filed 2020·Granted Nov 1, 2022·2 cites·17 claims
3091US10685874B1Self-aligned cuts in an interconnect structureGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 16, 2020·6 cites·17 claims
3191US10141446B2Formation of bottom junction in vertical FET devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 27, 2018·5 cites·13 claims
3290US11342427B23D directed self-assembly for nanostructuresTOKYO ELECTRON LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
3390US11043418B2Middle of the line self-aligned direct pattern contactsGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 22, 2021·5 cites·19 claims
3489US12336274B2Self-aligned method for vertical recess for 3D device integrationTOKYO ELECTRON LTD·Filed 2022·Granted Jun 17, 2025·1 cites·20 claims
3589US11264289B2Method for threshold voltage tuning through selective deposition of high-K metal gate (HKMG) film stacksTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·2 cites·19 claims
3689US11233006B2Metallization lines on integrated circuit productsGLOBALFOUNDRIES US INC·Filed 2018·Granted Jan 25, 2022·3 cites·20 claims
3789US10290549B2Integrated circuit structure, gate all-around integrated circuit structure and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted May 14, 2019·6 cites·7 claims
3888US11574845B2Apparatus and method for simultaneous formation of diffusion break, gate cut, and independent N and P gates for 3D transistor devicesTOKYO ELECTRON LTD·Filed 2020·Granted Feb 7, 2023·2 cites·13 claims
3988US11177250B2Method for fabrication of high density logic and memory for advanced circuit architectureTOKYO ELECTRON LTD·Filed 2020·Granted Nov 16, 2021·2 cites·20 claims
4088US2024413082A1Metallization lines on integrated circuit productsGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
4187US10347745B2Methods of forming bottom and top source/drain regions on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 9, 2019·5 cites·17 claims
4287US9842933B1Formation of bottom junction in vertical FET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 12, 2017·4 cites·14 claims
4386US11764113B2Method of 3D logic fabrication to sequentially decrease processing temperature and maintain material thermal thresholdsTOKYO ELECTRON LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
4486US11723187B2Three-dimensional memory cell structureTOKYO ELECTRON LTD·Filed 2021·Granted Aug 8, 2023·1 cites·20 claims
4585US12131994B2Metallization lines on integrated circuit productsGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 29, 2024·0 cites·19 claims
4685US11646318B2Connections from buried interconnects to device terminals in multiple stacked devices structuresTOKYO ELECTRON LTD·Filed 2021·Granted May 9, 2023·1 cites·7 claims
4784US11581242B2Integrated high efficiency gate on gate coolingTOKYO ELECTRON LTD·Filed 2021·Granted Feb 14, 2023·1 cites·14 claims
4884US10950610B2Asymmetric gate cut isolation for SRAMGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 16, 2021·3 cites·10 claims
4984US10249728B2Air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 2, 2019·3 cites·18 claims
5084US10074564B2Self-aligned middle of the line (MOL) contactsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 11, 2018·3 cites·18 claims

Showing the top 50 of 112 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →