Inventor · disambiguated record
David L. Chapek
Also filed as: CHAPEK DAVID · CHAPEK DAVID L · CHAPEK DAVID LEROY
25 granted patents·2 pending applications·488 citations·filing 1995–2012
97Inventor score
Files withMICRON TECHNOLOGY INC21GONZALEZ FERNANDO2NEWPORT FAB LLC2CHAPEK DAVID L1VARIAN ASSOCIATES1
Top patents by PatentIndex Score
27 records- 0192US5711812AApparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processesVARIAN ASSOCIATES·Filed 1995·Granted Jan 27, 1998·192 cites·8 claims
- 0291US6444591B1Method for reducing contamination prior to epitaxial growth and related structureNEWPORT FAB LLC·Filed 2000·Granted Sep 3, 2002·49 cites·16 claims
- 0382US6747249B2System for performing thermal reflow operations under high gravity conditionsMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 8, 2004·16 cites·17 claims
- 0481US8173517B2Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structureGONZALEZ FERNANDO·Filed 2010·Granted May 8, 2012·4 cites·20 claims
- 0581US6097076ASelf-aligned isolation trenchMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 1, 2000·44 cites·40 claims
- 0680US6214697B1Trench isolation for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 10, 2001·24 cites·25 claims
- 0774US6288367B1Method and apparatus for performing thermal reflow operations under high gravity conditionsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 11, 2001·11 cites·24 claims
- 0871US5953621AMethod for forming a self-aligned isolation trenchMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 14, 1999·27 cites·43 claims
- 0963US6573478B2Systems for performing thermal reflow operations under high gravity conditionsMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 3, 2003·6 cites·24 claims
- 1061US6271152B1Method for forming oxide using high pressureMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 7, 2001·6 cites·2 claims
- 1156US6323101B1Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layersMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 27, 2001·19 cites·46 claims
- 1255US6051480ATrench isolation for semiconductor devicesMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 18, 2000·20 cites·20 claims
- 1353US6165853ATrench isolation methodMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 26, 2000·17 cites·31 claims
- 1453US2012208345A1Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structureGONZALEZ FERNANDO·Filed 2012·Application pending·0 cites
- 1552US2013001692A1Semiconductor Devices Including a Layer of Polycrystalline Silicon Having a Smooth MorphologyMICRON TECHNOLOGY INC·Filed 2012·Application pending·0 cites
- 1651US6066576AMethod for forming oxide using high pressureMICRON TECHNOLOGY INC·Filed 1997·Granted May 23, 2000·13 cites·30 claims
- 1750US6414275B2Method and apparatus for performing thermal reflow operations under high gravity conditionsMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 2, 2002·2 cites·24 claims
- 1850US6143631AMethod for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited siliconMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 7, 2000·11 cites·8 claims
- 1948US6597057B2Epitaxial growth in a silicon-germanium semiconductor device with reduced contaminationNEWPORT FAB LLC·Filed 2002·Granted Jul 22, 2003·1 cites·5 claims
- 2045US7235856B1Trench isolation for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 26, 2007·1 cites·5 claims
- 2145US6096998AMethod and apparatus for performing thermal reflow operations under high gravity conditionsMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 1, 2000·6 cites·29 claims
- 2243US5846888AMethod for in-situ incorporation of desirable impurities into high pressure oxidesMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 8, 1998·10 cites·21 claims
- 2340US6891245B2Integrated circuit formed by removing undesirable second oxide while minimally affecting a desirable first oxideMICRON TECHNOLOGY INC·Filed 2000·Granted May 10, 2005·0 cites·22 claims
- 2436US7749860B2Method for forming a self-aligned T-shaped isolation trenchMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 6, 2010·6 cites·37 claims
- 2535US8288832B1Semiconductor devices including a layer of polycrystalline silicon having a smooth morphologyCHAPEK DAVID L·Filed 2000·Granted Oct 16, 2012·0 cites·5 claims
- 2634US6174761B1Method and apparatus for performing thermal reflow operations under high gravity conditionsMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 16, 2001·2 cites·13 claims
- 2731US6096660AMethod for removing undesirable second oxide while minimally affecting a desirable first oxideMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 1, 2000·1 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →