Inventor · disambiguated record
Daniel F. Feezell
Also filed as: FEEZELL DANIEL · FEEZELL DANIEL F
47 granted patents·17 pending applications·1,356 citations·filing 2007–2024
98Inventor score
Top patents by PatentIndex Score
64 records- 0199US8299473B1Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphorsD EVELYN MARK P·Filed 2010·Granted Oct 30, 2012·75 cites·53 claims
- 0299US8259769B1Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substratesRARING JAMES W·Filed 2009·Granted Sep 4, 2012·234 cites·15 claims
- 0398US11342442B2Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestalUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 24, 2022·4 cites·22 claims
- 0498US8634442B1Optical device structure using GaN substrates for laser applicationsRARING JAMES W·Filed 2010·Granted Jan 21, 2014·78 cites·58 claims
- 0598US8422525B1Optical device structure using miscut GaN substrates for laser applicationsRARING JAMES W·Filed 2010·Granted Apr 16, 2013·216 cites·18 claims
- 0698US8252662B1Method and structure for manufacture of light emitting diode devices using bulk GaNPOBLENZ CHRISTIANE·Filed 2010·Granted Aug 28, 2012·220 cites·18 claims
- 0798US8143148B1Self-aligned multi-dielectric-layer lift off process for laser diode stripesRARING JAMES W·Filed 2009·Granted Mar 27, 2012·241 cites·15 claims
- 0897US9142400B1Method of making a heteroepitaxial layer on a seed areaSTC UNM·Filed 2013·Granted Sep 22, 2015·15 cites·10 claims
- 0997US9000466B1Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall rougheningSORAA INC·Filed 2013·Granted Apr 7, 2015·27 cites·25 claims
- 1097US8618560B2Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphorsSORAA INC·Filed 2012·Granted Dec 31, 2013·25 cites·27 claims
- 1196US9531164B2Optical device structure using GaN substrates for laser applicationsRARING JAMES W·Filed 2010·Granted Dec 27, 2016·46 cites·42 claims
- 1296US8847249B2Solid-state optical device having enhanced indium content in active regionsRARING JAMES W·Filed 2009·Granted Sep 30, 2014·46 cites·21 claims
- 1396US8728842B2Self-aligned multi-dielectric-layer lift off process for laser diode stripesRARING JAMES W·Filed 2012·Granted May 20, 2014·25 cites·16 claims
- 1494US9076813B1Gate-all-around metal-oxide-semiconductor transistors with gate oxidesLEE SEUNG-CHANG·Filed 2014·Granted Jul 7, 2015·16 cites·15 claims
- 1594US9071039B2Optical device structure using GaN substrates for laser applicationsSORAA LASER DIODE INC·Filed 2013·Granted Jun 30, 2015·14 cites·8 claims
- 1693US10141418B1Device with heteroepitaxial structure made using a growth maskBRUECK STEVEN R J·Filed 2015·Granted Nov 27, 2018·6 cites·5 claims
- 1792US8866149B2Method for the reuse of gallium nitride epitaxial substratesUNIV CALIFORNIA·Filed 2013·Granted Oct 21, 2014·9 cites·19 claims
- 1891US11374106B2Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Jun 28, 2022·2 cites·24 claims
- 1989US9722398B2Optical device structure using GaN substrates for laser applicationsSORAA LASER DIODE INC·Filed 2015·Granted Aug 1, 2017·5 cites·17 claims
- 2089US9136673B2Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laserUNIV CALIFORNIA·Filed 2013·Granted Sep 15, 2015·7 cites·20 claims
- 2189US8767787B1Integrated laser diodes with quality facets on GaN substratesRARING JAMES W·Filed 2012·Granted Jul 1, 2014·9 cites·22 claims
- 2286USRE47241EPolarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphorsSORAA INC·Filed 2015·Granted Feb 12, 2019·4 cites·46 claims
- 2385US9257535B2Gate-all-around metal-oxide-semiconductor transistors with gate oxidesLEE SEUNG-CHANG·Filed 2015·Granted Feb 9, 2016·4 cites·16 claims
- 2485US9147733B2Method for the reuse of gallium nitride epitaxial substratesUNIV CALIFORNIA·Filed 2014·Granted Sep 29, 2015·4 cites·18 claims
- 2583US9773704B2Method for the reuse of gallium nitride epitaxial substratesUNIV CALIFORNIA·Filed 2016·Granted Sep 26, 2017·2 cites·21 claims
- 2683US7480322B2Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laserUNIV CALIFORNIA·Filed 2007·Granted Jan 20, 2009·7 cites·20 claims
- 2783US2022293768A1Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2022·Application pending·0 cites
- 2883US2022285526A1Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2022·Application pending·0 cites
- 2982US8686397B2Low droop light emitting diode structure on gallium nitride semipolar substratesNAKAMURA SHUJI·Filed 2012·Granted Apr 1, 2014·4 cites·26 claims
- 3081US8211723B2Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodesFEEZELL DANIEL F·Filed 2008·Granted Jul 3, 2012·8 cites·26 claims
- 3175US11456370B2Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestalUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Sep 27, 2022·0 cites·21 claims
- 3275US11349011B2Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 31, 2022·0 cites·25 claims
- 3375US11342441B2Method of forming a seed area and growing a heteroepitaxial layer on the seed areaUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 24, 2022·0 cites·25 claims
- 3475US2024402216A1Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tipsUNM RAINFOREST INNOVATIONS·Filed 2024·Application pending·0 cites
- 3574US2020212198A1Method of making heteroepitaxial structures and device formed by the methodSTC UNM·Filed 2020·Application pending·0 cites
- 3669US11342438B1Device with heteroepitaxial structure made using a growth maskUNM RAINFOREST INNOVATIONS·Filed 2018·Granted May 24, 2022·0 cites·30 claims
- 3769US9040327B2Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodesFEEZELL DANIEL F·Filed 2012·Granted May 26, 2015·1 cites·14 claims
- 3869US7839903B2Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasersUNIV CALIFORNIA·Filed 2008·Granted Nov 23, 2010·2 cites·24 claims
- 3966US11715635B2Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etchingUNM RAINFOREST INNOVATIONS·Filed 2021·Granted Aug 1, 2023·0 cites·22 claims
- 4065US12078654B2Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tipsUNM RAINFOREST INNOVATIONS·Filed 2021·Granted Sep 3, 2024·0 cites·12 claims
- 4162US12308615B2Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrorsUNM RAINFOREST INNOVATIONS·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 4259US11177126B2Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etchingSTC UNM·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 4359US11002758B2Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tipsUNM RAINFOREST INNOVATIONS·Filed 2017·Granted May 11, 2021·0 cites·15 claims
- 4458US9406843B2Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall rougheningSORAA INC·Filed 2015·Granted Aug 2, 2016·0 cites·28 claims
- 4557US9396943B2Method for the reuse of gallium nitride epitaxial substratesUNIV CALIFORNIA·Filed 2015·Granted Jul 19, 2016·0 cites·16 claims
- 4656US12255265B2Devices comprising distributed bragg reflectors and methods of making the devicesUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Mar 18, 2025·0 cites·26 claims
- 4756US11652188B2Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structuresUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 16, 2023·0 cites·20 claims
- 4856US9640947B2Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laserUNIV CALIFORNIA·Filed 2015·Granted May 2, 2017·0 cites·18 claims
- 4955US2010001300A1COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDsSORAA INC·Filed 2009·Application pending·0 cites
- 5054US2010006873A1HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaNSORAA INC·Filed 2009·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Daniel F. Feezell files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →