Inventor · disambiguated record
Daniel Krebs
Also filed as: KREBS DANIEL · KREBS DANIEL FRITZ
19 granted patents·23 pending applications·83 citations·filing 1976–2025
93Inventor score
Top patents by PatentIndex Score
42 records- 0196US9293199B2Phase-change memory cellsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 22, 2016·17 cites·30 claims
- 0292US9257639B2Phase-change memory cellsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 9, 2016·16 cites·19 claims
- 0390US9530493B2Resistive random-access memory cellsIBM·Filed 2016·Granted Dec 27, 2016·9 cites·20 claims
- 0483US9293198B2Programming of gated phase-change memory cellsIBM·Filed 2013·Granted Mar 22, 2016·4 cites·20 claims
- 0572US9087987B2Phase-change memory cellsIBM·Filed 2014·Granted Jul 21, 2015·4 cites·24 claims
- 0671US8233317B2Phase change memory device suitable for high temperature operationBREITWISCH MATTHEW J·Filed 2009·Granted Jul 31, 2012·7 cites·19 claims
- 0770US9570679B2Nanodevice assembliesGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 14, 2017·2 cites·19 claims
- 0870US9305636B2Resistive random-access memory cellsIBM·Filed 2014·Granted Apr 5, 2016·3 cites·20 claims
- 0967US8397927B2Break-open valve for a containerKREBS DANIEL·Filed 2005·Granted Mar 19, 2013·4 cites·27 claims
- 1065US9053785B2Phase-change memory cellIBM·Filed 2013·Granted Jun 9, 2015·3 cites·18 claims
- 1164US9548110B2Memory device and method for thermoelectric heat confinementIBM·Filed 2015·Granted Jan 17, 2017·2 cites·20 claims
- 1262US9087574B2Memory apparatus with gated phase-change memory cellsIBM·Filed 2013·Granted Jul 21, 2015·2 cites·10 claims
- 1362US2025142869A1Power finfets with alternating shielding regions and one-piece control electrodes and methods for producing themBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 1462US2025142944A1Method for manufacturing a vertical field effect transistor structure and corresponding vertical field effect transistor structureBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 1559US2024372003A1Field-effect transistor and method for producing a field-effect transistorBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 1659US2024371928A1Method for producing a vertical field-effect transistor structure and corresponding vertical field-effect transistor structureBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 1758US2024290880A1Method for producing a vertical field-effect transistor structure and corresponding vertical field-effect transistor structureBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 1858US2024222495A1Vertical field-effect transistor structure and method for producing a vertical field-effect transistor structureBOSCH GMBH ROBERT·Filed 2023·Application pending·0 cites
- 1958US2025113514A1Method for producing a power semiconductor component having a plurality of fins and power semiconductor component produced therefromBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 2057US2025185312A1Method for producing a semiconductor component, and semiconductor componentMARTINEZ LIMIA ALBERTO·Filed 2024·Application pending·0 cites
- 2157US2024128372A1Method for manufacturing a vertical field effect transistor structure and corresponding vertical field effect transistor structureBOSCH GMBH ROBERT·Filed 2023·Application pending·0 cites
- 2256US2024234568A9Field-effect transistor, and methods for productionBOSCH GMBH ROBERT·Filed 2023·Application pending·0 cites
- 2355US2013322167A1Programming of gated phase-change memory cellsIBM·Filed 2013·Application pending·0 cites
- 2454US2024097017A1Vertical multichannel gallium nitride transistorBOSCH GMBH ROBERT·Filed 2023·Application pending·0 cites
- 2553US2024128358A1Transistor arrangement and method for producing a transistor with a fin structureBOSCH GMBH ROBERT·Filed 2023·Application pending·0 cites
- 2653US2025280583A1Method for producing a power finfetBOSCH GMBH ROBERT·Filed 2025·Application pending·0 cites
- 2753US2024128342A1Field-effect transistor, and methods for productionBOSCH GMBH ROBERT·Filed 2023·Application pending·0 cites
- 2851US12439635B2Vertical field effect transistor and method for the formation thereofBOSCH GMBH ROBERT·Filed 2020·Granted Oct 7, 2025·0 cites·10 claims
- 2951US8947926B2Semiconductor stack incorporating phase change materialIBM·Filed 2013·Granted Feb 3, 2015·0 cites·6 claims
- 3051US2025048674A1Method for producing a power finfet, and power finfetBOSCH GMBH ROBERT·Filed 2022·Application pending·0 cites
- 3150US12211939B2Vertical field-effect transistor and method for forming sameBOSCH GMBH ROBERT·Filed 2020·Granted Jan 28, 2025·0 cites·11 claims
- 3247US12396202B2Vertical fin field effect transistor, vertical fin field effect transistor arrangement, and method for forming a vertical fin field effect transistorBOSCH GMBH ROBERT·Filed 2021·Granted Aug 19, 2025·0 cites·13 claims
- 3347US2025048670A1Method for producing a power finfet, and power finfetBOSCH GMBH ROBERT·Filed 2022·Application pending·0 cites
- 3445US9054034B2Semiconductor stack incorporating phase change materialIBM·Filed 2013·Granted Jun 9, 2015·0 cites·14 claims
- 3545US2024234491A1Vertical semiconductor component, in particular vertical transistor, with minimized source-drain leakage currentsBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 3645US2023402538A1Vertical semiconductor component, and method for its productionBOSCH GMBH ROBERT·Filed 2021·Application pending·0 cites
- 3745US2025056830A1Method for producing a power finfet by means of lithography masks, and power finfetBOSCH GMBH ROBERT·Filed 2022·Application pending·0 cites
- 3843US9076517B2Memory apparatus with gated phase-change memory cellsIBM·Filed 2013·Granted Jul 7, 2015·0 cites·11 claims
- 3942US2022416028A1Vertical field effect transistor and method for the formation thereofBOSCH GMBH ROBERT·Filed 2020·Application pending·0 cites
- 4041US2022231120A1Transistor cell including an implanted expansion regionBOSCH GMBH ROBERT·Filed 2020·Application pending·0 cites
- 4130US4049192ABlood washing method using a saline wash solution of varying concentration for use with blood washing apparatusUNION CARBIDE CORP·Filed 1976·Granted Sep 20, 1977·10 cites·2 claims
- 4230US2015302921A1Device and method for determining a cell level of a resistive memory cellIBM·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →