Inventor · disambiguated record
Dae-Jin Kwon
Also filed as: KWON DAE-JIN
31 granted patents·11 pending applications·713 citations·filing 2002–2017
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD37JEONG YONG-KUK1KIM WEON-HONG1PANTECH & CURITEL COMM INC1SUPREMA INC1
Top patents by PatentIndex Score
42 records- 0199US9029244B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 12, 2015·417 cites·8 claims
- 0295US7002788B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 21, 2006·27 cites·7 claims
- 0393US6835621B2Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-siliconSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 28, 2004·69 cites·9 claims
- 0491US7288453B2Method of fabricating analog capacitor using post-treatment techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 30, 2007·17 cites·11 claims
- 0591US7125767B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 24, 2006·15 cites·19 claims
- 0688US7091548B2Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·35 cites·19 claims
- 0787US7491654B2Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·11 cites·20 claims
- 0885US9702041B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·4 claims
- 0980US7232492B2Method of forming thin film for improved productivitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·23 cites·24 claims
- 1079US7442982B2Capacitor having reaction preventing layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·6 cites·13 claims
- 1178US7508649B2Multi-layered dielectric film of microelectronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 24, 2009·7 cites·14 claims
- 1277US7297591B2Method for manufacturing capacitor of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 20, 2007·18 cites·14 claims
- 1375US7435654B2Analog capacitor having at least three high-k dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·4 cites·18 claims
- 1472US7095460B2Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 22, 2006·16 cites·15 claims
- 1570US9875791B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 23, 2018·2 cites·11 claims
- 1670US7615783B2Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 10, 2009·4 cites·9 claims
- 1770US7476922B2Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 13, 2009·16 cites·7 claims
- 1868US9754660B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 5, 2017·2 cites·9 claims
- 1967US9406502B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 2, 2016·0 cites·7 claims
- 2066US7554146B2Metal-insulator-metal capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 30, 2009·3 cites·3 claims
- 2164US7732296B2Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 8, 2010·4 cites·19 claims
- 2264US2011097905A1Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2362US7679124B2Analog capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 16, 2010·1 cites·4 claims
- 2462US2006156980A1Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2561US7407897B2Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·2 cites·9 claims
- 2661US7008837B2Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·7 cites·26 claims
- 2759US7563672B2Methods of fabricating integrated circuit devices including metal-insulator-metal capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·1 cites·7 claims
- 2854US7833580B2Method of forming a carbon nano-material layer using a cyclic deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 16, 2010·1 cites·31 claims
- 2954US2007178249A1Methods of forming metal layers using metal-organic chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3052US7888772B2Electronic fuse having heat spreading structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·1 cites·20 claims
- 3152US7199003B2Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus thereforSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 3, 2007·3 cites·18 claims
- 3251US2006078678A1Method of forming a thin film by atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3350US2007169697A1Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3448US2006124987A1Capacitor of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3546US2009224949A1Key input apparatusPANTECH & CURITEL COMM INC·Filed 2009·Application pending·0 cites
- 3643US7166541B2Method of forming dielectric layer using plasma enhanced atomic layer deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 23, 2007·0 cites·15 claims
- 3742US2007175495A1Apparatus for Treating Plasma and Method for Cleaning the SameKIM WEON-HONG·Filed 2007·Application pending·0 cites
- 3842US2006081905A1Dielectric multilayer of microelectronic device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3940US2004175905A1Method of forming thin film using atomic layer depositionFiled 2004·Application pending·0 cites
- 4039US10303931B2Light irradiation method and light irradiation apparatusSUPREMA INC·Filed 2017·Granted May 28, 2019·0 cites·18 claims
- 4139US10128254B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 13, 2018·0 cites·18 claims
- 4239US2006006449A1Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the sameJEONG YONG-KUK·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →