Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus thereof

Abstract

In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

1 . An apparatus for forming a dielectric layer comprising: 
 a loadlock chamber including a cassette for receiving a plurality of semiconductor substrates;    a transfer chamber including a robot arm connected to the loadlock chamber for loading and unloading a semiconductor substrate to and from the loadlock chamber;    a first deposition chamber connected to the transfer chamber for depositing a first dielectric layer on the substrate;    a curing chamber connected to the first deposition chamber; and    a second deposition chamber connected to the transfer chamber for depositing a second dielectric layer on the substrate,    wherein a first dielectric layer deposited in the first deposition chamber is cured in the curing chamber and then a second dielectric layer is deposited in the second deposition chamber.    
   
   
       2 . The apparatus as claimed in  claim 1 , wherein the first dielectric layer is deposited using only a source gas without a reactant gas in the first deposition chamber.  
   
   
       3 . The apparatus as claimed in  claim 1 , wherein the second dielectric layer is deposited using only a source gas without a reactant gas in the second deposition chamber.  
   
   
       4 . The apparatus as claimed in  claim 1 , wherein the first dielectric layer deposited in the first deposition chamber is cured in the curing chamber in an atmosphere containing oxygen.  
   
   
       5 . The apparatus as claimed in  claim 1 , wherein the transfer chamber introduces the substrate into the first deposition chamber and the second deposition chamber.  
   
   
       6 . The apparatus as claimed in  claim 1 , wherein the transfer chamber receives the substrate from the second deposition chamber and unloads the substrate to the loadlock chamber without additional curing.  
   
   
       7 . The apparatus as claimed in  claim 1 , wherein the curing chamber is connected to an ozone generator for generating oxygen radicals.  
   
   
       8 . The apparatus as claimed in  claim 1 , wherein the curing chamber is connected to a plasma generator for generating oxygen radicals.