Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Abstract

An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

1 . An apparatus for fabricating a semiconductor device, the apparatus comprising: 
 a reaction chamber in which a substrate is processed to fabricate a semiconductor device;    a first processing gas supply pipe supplying a first processing gas into the reaction chamber;    a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the 4-way valve being installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe;    a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas;    a bypass connected to the second outlet of the 4-way valve; and    a gate valve installed at the bypass.    
   
   
       2 . The apparatus of  claim 1 , wherein the first processing gas is a purge gas and the second processing gas is a source gas that reacts in the reaction chamber to fabricate a semiconductor device on the substrate.  
   
   
       3 . The apparatus of  claim 1 , further comprising a third processing-gas supply pipe connected to the second processing gas supply pipe to supply a third processing gas.  
   
   
       4 . The apparatus of  claim 3 , wherein the first processing gas is a purge gas, the third processing gas is a carrier gas, and the second processing gas is a source gas that reacts in the reaction chamber to fabricate a semiconductor device on the substrate.  
   
   
       5 . The apparatus of  claim 4 , further comprising: 
 a third processing gas supply source installed at an end of the third processing gas supply pipe;    a first gate valve installed between the third processing gas supply source and the 4-way valve;    a second processing gas supply source installed at an end of the second processing gas supply pipe; and    a sthird processing gas supply pipe branch extending from the third processing gas supply pipe between the third processing gas supply source and the first gate valve to the second processing gas supply source to selectively supply the third processing gas to the second processing gas supply source,    wherein the second processing gas supply pipe is connected to the third processing gas supply pipe between the 4-way valve and the first gate valve.    
   
   
       6 . The apparatus of  claim 4 , further comprising a different second processing gas supply source installed in parallel with the third processing gas supply pipe and in symmetry with the second processing gas supply source so that the second processing gas and a different second processing gas are selectively supplied.  
   
   
       7 . The apparatus of  claim 6 , further comprising: 
 a third processing gas supply source installed at an end of the third processing gas supply pipe;    a first gate valve installed between the third processing gas supply source and the 4-way valve;    a second processing gas supply source installed at an end of the second processing gas supply pipe;    a second 3-way valve through which the second processing gas supply pipe is connected to the third processing gas supply pipe between the 4-way valve and the first gate valve;    a third processing gas supply pipe branch extending from the third processing gas supply pipe between the third processing gas supply source and the first gate valve through a first 3-way valve to the second processing gas supply source to selectively supply the third processing gas to the second processing gas supply source;    a different second processing gas supply pipe having an end connected between the 4-way valve and the second 3-way valve through a fourth 3-way valve and another end connected to the different second processing gas supply source; and    another third processing gas supply pipe branch extending from the third processing gas supply pipe between the third processing gas supply source and the first 3-way valve through a third 3-way valve to the different second processing gas supply source to selectively supply the third processing gas to the different second processing gas supply source.    
   
   
       8 . The apparatus of  claim 1 , wherein the gate valve is a 2-way diaphragm valve.  
   
   
       9 . The apparatus of  claim 1 , wherein the 4-way valve is a 4-way diaphragm valve.  
   
   
       10 . The apparatus of  claim 9 , wherein, when the 4-way diaphragm valve is closed, the first processing gas is supplied to the reaction chamber and the third processing gas flows into the bypass, and when the 4-way diaphragm valve is open, the first processing gas is supplied to the reaction chamber and the third processing gas flows into the bypass and the reaction chamber.  
   
   
       11 . The apparatus of  claim 10 , wherein when the 4-way diaphragm valve is closed, the gate valve is open, the first processing gas is supplied to the reaction chamber, and the third processing gas flows into the bypass, and when the 4-way diaphragm valve is open, the gate valve is closed and the first processing gas and the third processing gas are supplied to the reaction chamber.  
   
   
       12 . The apparatus of  claim 9 , wherein the 4-way diaphragm valve comprises: 
 a body;    a housing formed to define a predetermined space above the body;    a diaphragm installed within the housing;    a first horizontal via hole formed to allow the first processing gas supply pipe to penetrate straight through a lower portion of the body through the first inlet and the first outlet of the 4-way diaphragm valve;    a first vertical via hole vertically extending from the first horizontal via hole to a top surface of the body;    a second vertical via hole vertically extending from the second outlet of the 4-way diaphragm valve connected to the bypass to the top surface of the body;    a third vertical via hole vertically extending from the second inlet of the 4-way diaphragm valve connected to the second processing gas supply pipe to the top surface of the body; and    a second horizontal via hole connecting an upper portion of the second vertical via hole and an upper portion of the third vertical via hole.    
   
   
       13 . The apparatus of  claim 9 , wherein the 4-way diaphragm valve comprises: 
 a body;    a housing formed to define a predetermined space above the body;    a diaphragm installed within the housing;    a first horizontal via hole formed to allow the first processing gas supply pipe to penetrate a lower portion of the body at a right angle through the first inlet and the first outlet of the 4-way diaphragm valve;    a first vertical via hole vertically extending from the first horizontal via hole to a top surface of the body;    a second horizontal via hole connecting at a right angle the second inlet of the 4-way diaphragm valve connected to the second processing gas supply pipe and the second outlet of the 4-way diaphragm valve connected to the bypass; and    a second vertical via hole vertically extending from the second horizontal via hole to the top surface of the body.    
   
   
       14 . The apparatus of  claim 1 , further comprising: 
 a discharge pipe connected to the reaction chamber to discharge gas from the reaction chamber;    a discharge pump installed at the discharge pipe,    wherein the bypass is connected to the discharge pipe in front of the discharge pump.    
   
   
       15 . The apparatus of  claim 1 , wherein the apparatus is one of a deposition apparatus and an etching apparatus that use the processing gases supplied to the reaction chamber.  
   
   
       16 . An apparatus for fabricating a semiconductor device, the apparatus comprising: 
 a reaction chamber in which a substrate is processed to fabricate a semiconductor device;    a purge gas supply pipe connected to the reaction chamber to supply a purge gas to the reaction chamber;    a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe;    a source gas supply pipe connected to the second inlet of the 4-way valve to supply a source gas to the reaction chamber;    a first carrier gas supply pipe connected to the source gas supply pipe;    a reactive gas supply pipe connected to the reaction chamber to supply a reactive gas to the reaction chamber;    a second carrier gas supply pipe connected to the reactive gas supply pipe;    a discharge pipe connected to the reaction chamber to discharge gas from the reaction chamber;    a discharge pump installed at the discharge pipe;    a bypass connected to the second outlet of the 4-way valve and to the discharge pipe in front of the discharge pump; and    a gate valve installed at the bypass.    
   
   
       17 . The apparatus of  claim 16 , further comprising a throttle valve installed at the discharge pipe between the reaction chamber and a junction of the discharge pipe and the bypass.  
   
   
       18 . The apparatus of  claim 16 , further comprising: 
 a first carrier gas supply source installed at an end of the first carrier gas supply pipe;    a first gate valve installed between the first carrier gas supply source and the 4-way valve;    a source gas supply source installed at an end of the source gas supply pipe; and    a first carrier gas supply pipe branch extending from the first carrier gas supply pipe between the first carrier gas supply source and the first gate valve to the source gas supply source to selectively supply the first carrier gas to the source gas supply source,    wherein the source gas supply pipe is connected to the first carrier gas supply pipe between the 4-way valve and the first gate valve.    
   
   
       19 . The apparatus of  claim 16 , further comprising a different source gas supply source installed in parallel in the first carrier gas supply pipe and in symmetry with the source gas supply source so that the source gas and a different source gas are selectively supplied.  
   
   
       20 . The apparatus of  claim 19 , further comprising: 
 a first carrier gas supply source installed at an end of the first carrier gas supply pipe;    a first gate valve installed between the first carrier gas supply source and the 4-way valve;    a source gas supply source installed at an end of the source gas supply pipe;    a second 3-way valve through which the source gas supply pipe is connected to the first carrier gas supply pipe between the 4-way valve and the first gate valve;    a first carrier gas supply pipe branch extending from the first carrier gas supply pipe between the first carrier gas supply source and the first gate valve through a first 3-way valve to the source gas supply source to selectively supply the first carrier gas to the source gas supply source;    a different source gas supply pipe having an end connected between the 4-way valve and the second 3-way valve through a fourth 3-way valve and another end connected to the different source gas supply source; and    another first carrier gas supply pipe branch extending from the first carrier gas supply pipe between the first carrier gas supply source and the first 3-way valve through a third 3-way valve to the different source gas supply source to selectively supply the first carrier gas to the different source gas supply source.    
   
   
       21 . The apparatus of  claim 19 , further comprising a different reactive gas supply source installed at the reactive gas supply pipe in parallel with the reactive gas supply source so that the reactive gas and a different reactive gas are selectively supplied.  
   
   
       22 . The apparatus of  claim 16 , wherein the 4-way valve is a 4-way diaphragm valve.  
   
   
       23 . The apparatus of  claim 22 , wherein, when the 4-way diaphragm valve is closed, the purge gas is supplied to the reaction chamber and one of the first carrier gas and the source gas flows into the bypass, and when the 4-way diaphragm valve is open, the purge gas is supplied to the reaction chamber and one of the first carrier gas and the source gas flows into the bypass and the reaction chamber.  
   
   
       24 . The apparatus of  claim 23 , wherein when the 4-way diaphragm valve is closed, the gate valve is open, the purge gas is supplied to the reaction chamber, and one of the first carrier gas and the source gas flows into the bypass, and when the 4-way diaphragm valve is open, the gate valve is closed and the purge gas and one of the first carrier gas and the source gas are supplied to the reaction chamber.  
   
   
       25 . The apparatus of  claim 22 , wherein the 4-way diaphragm valve comprises: 
 a body;    a housing formed to define a predetermined space above the body;    a diaphragm installed within the housing;    a first horizontal via hole formed to allow the purge gas supply pipe to penetrate straight through a lower portion of the body through the first inlet and the first outlet of the 4-way diaphragm valve;    a first vertical via hole vertically extending from the first horizontal via hole to a top surface of the body;    a second vertical via hole vertically extending from the second outlet of the 4-way diaphragm valve connected to the bypass to the top surface of the body;    a third vertical via hole vertically extending from the second inlet of the 4-way diaphragm valve connected to the source gas supply pipe to the top surface of the body; and    a second horizontal via hole connecting an upper portion of the second vertical via hole and an upper portion of the third vertical via hole.    
   
   
       26 . The apparatus of  claim 22 , wherein the 4-way diaphragm valve comprises: 
 a body;    a housing formed to define a predetermined space above the body;    a diaphragm installed within the housing;    a first horizontal via hole formed to allow the purge gas supply pipe to penetrate a lower portion of the body at a right angle through the first inlet and the first outlet of the 4-way diaphragm valve;    a first vertical via hole vertically extending from the horizontal via hole to a top surface of the body;    a second horizontal via hole connecting at a right angle the second inlet of the 4-way diaphragm valve connected to the source gas supply pipe and the second outlet of the 4-way diaphragm valve connected to the bypass; and    a second vertical via hole vertically extending from the second horizontal via hole to the top surface of the body.    
   
   
       27 . The apparatus of  claim 16 , wherein at least one gas among the source gas and the reactive gas is intermittently supplied to the reaction chamber.  
   
   
       28 . A method of controlling a valve of an apparatus for fabricating a semiconductor device, which includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the 4-way valve being installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass, the method comprising: 
 closing the gate valve installed at the bypass and opening the 4-way valve while the second processing gas is supplied to the reaction chamber; and    opening the gate valve and closing the 4-way valve while supply of the second processing gas to the reaction chamber is interrupted.    
   
   
       29 . The method of  claim 28 , wherein, while the second processing gas is supplied into the reaction chamber or the supply of the second processing gas is interrupted, the first processing gas is continuously supplied to the reaction chamber regardless of an open or closed state of the 4-way valve.  
   
   
       30 . The method of  claim 28 , wherein the first processing gas is a purge gas and the second processing gas is a source gas that reacts in the reaction chamber to fabricate a semiconductor device on the substrate.  
   
   
       31 . The method of  claim 28 , wherein, when the apparatus further includes a third processing gas supply pipe connected to the second processing gas supply pipe to allow a third processing gas and the second processing gas to be selectively supplied to the second inlet of the 4-way valve, 
 the third processing gas is supplied to the reaction chamber while the second processing gas is supplied to the reaction chamber, and    only the third processing gas flows into the bypass while the supply of the second processing gas to the reaction chamber is interrupted.    
   
   
       32 . A method of controlling a valve of an apparatus for fabricating a semiconductor device, which includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a purge gas supply pipe connected to the reaction chamber to supply a purge gas to the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe; a source gas supply pipe connected to the second inlet of the 4-way valve to supply a source gas to the reaction chamber; a first carrier gas supply pipe connected to the source gas supply pipe; a reactive gas supply pipe connected to the reaction chamber to supply a reactive gas to the reaction chamber; a second carrier gas supply pipe connected to the reactive gas supply pipe; a discharge pipe connected to the reaction chamber to discharge gas from the reaction chamber; a discharge pump installed at the discharge pipe; a bypass connected to the second outlet of the 4-way valve and to the discharge pipe in front of the discharge pump; and a gate valve installed at the bypass, the method comprising: 
 closing the gate valve installed at the bypass and opening the 4-way valve while the source gas is supplied to the reaction chamber; and    opening the gate valve and closing the 4-way valve while supply of the source gas to the reaction chamber is interrupted.    
   
   
       33 . The method of  claim 32 , wherein, while the source gas is supplied into the reaction chamber or the supply of the source gas is interrupted, the purge gas is continuously supplied to the reaction chamber regardless of an open or closed state of the 4-way valve.  
   
   
       34 . The method of  claim 32 , wherein when the apparatus further includes a source gas supply source installed at an end of the source gas supply pipe, a first carrier gas supply source installed at an end of the first carrier gas supply pipe connected to the source supply pipe between the 4-way valve and the source gas supply source, a first carrier gas supply pipe branch extending from the first carrier gas supply pipe to the source gas supply source, and a first gate valve installed between a junction of the first carrier gas supply pipe and the first carrier gas supply pipe branch and a junction of the source gas supply pipe and the first carrier supply pipe, 
 the first gate valve is closed and the first carrier gas and the source gas are simultaneously supplied to the reaction chamber while the source gas is supplied to the reaction chamber, and    the first gate valve and the gate valve installed at the bypass are open and only the first carrier gas flows into the bypass while the supply of the source gas to the reaction chamber is interrupted.    
   
   
       35 . A method of fabricating a semiconductor device using an apparatus for fabricating a semiconductor device, which includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a purge gas supply pipe connected to the reaction chamber to supply a purge gas to the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe; a source gas supply pipe connected to the second inlet of the 4-way valve to supply a source gas to the reaction chamber; a first carrier gas supply pipe connected to the source gas supply pipe; a reactive gas supply pipe connected to the reaction chamber to supply a reactive gas to the reaction chamber; a second carrier gas supply pipe connected to the reactive gas supply pipe; a discharge pipe connected to the reaction chamber to discharge gas from the reaction chamber; a discharge pump installed at the discharge pipe; a bypass connected to the second outlet of the 4-way valve and to the discharge pipe in front of the discharge pump; and a gate valve installed at the bypass, the method comprising: 
 loading the substrate into the reaction chamber;    attaching a source gas material to the substrate by supplying the source gas to the reaction chamber;    purging a source gas material that is not attached to the substrate by supplying the purge gas to the reaction chamber;    forming a first reaction product layer on the substrate by supplying the reactive gas to the reaction chamber to allow the reactive gas to react with the source gas material attached to the substrate; and    purging the reactive gas that has not reacted with the source gas material by supplying the purge gas to the reaction chamber.    
   
   
       36 . The method of  claim 35 , further comprising repeating a single cycle comprised of the attaching of the source gas material, the purging of the source gas material, the forming of the first reaction product layer, and the purging of the reactive gas.  
   
   
       37 . The method of  claim 35 , wherein the forming of the first reaction product layer comprises allowing the reactive gas to react with the source gas material in a plasma state.  
   
   
       38 . The method of  claim 35 , wherein the purge gas is continuously supplied to the reaction chamber while the substrate is processed in the reaction chamber.  
   
   
       39 . The method of  claim 35 , wherein the attaching of the source gas material comprises supplying the purge gas, the first carrier gas, and the second carrier gas to the reaction chamber together with the source gas.  
   
   
       40 . The method of  claim 35 , wherein the attaching of the source gas material comprises closing the gate valve installed at the bypass and opening the second inlet and the first outlet of the 4-way valve to allow the source gas to flow into the reaction chamber through the source gas supply pipe.  
   
   
       41 . The method of  claim 35 , wherein the purging of the source gas material comprises supplying the second carrier gas to the reaction chamber together with the purge gas.  
   
   
       42 . The method of  claim 35 , wherein purging of the source gas material comprises opening the gate valve installed at the bypass and simultaneously opening the second inlet and the second outlet of the 4-way valve to allow the first carrier gas to flow into the bypass through the source gas supply pipe.  
   
   
       43 . The method of  claim 35 , wherein the forming of the first reaction product layer comprises supplying the purge gas and the second carrier gas to the reaction chamber together with the reaction gas.  
   
   
       44 . The method of  claim 35 , wherein the forming of the first reaction product layer comprises opening the gate valve installed at the bypass and simultaneously opening the second inlet and the second outlet of the 4-way valve to allow the first carrier gas to flow into the bypass through the source gas supply pipe.  
   
   
       45 . The method of  claim 35 , wherein when the apparatus further includes a source gas supply source installed at an end of the source gas supply pipe, a first carrier gas supply source installed at an end of the first carrier gas supply pipe connected to the source supply pipe between the 4-way valve and the source gas supply source, a first carrier gas supply pipe branch extending from the first carrier gas supply pipe to the source gas supply source, and a first gate valve installed between a junction of the first carrier gas supply pipe and the first carrier gas supply pipe branch and a junction of the source gas supply pipe and the first carrier supply pipe, 
 the first gate valve is closed and the first carrier gas and the source gas are simultaneously supplied to the reaction chamber while the source gas is supplied to the reaction chamber, and    the first gate valve and the gate valve installed at the bypass are open and only the first carrier gas flows into the bypass while the supply of the source gas to the reaction chamber is interrupted.    
   
   
       46 . The method of  claim 45 , wherein different source gases are selectively supplied by a plurality of source gas supply sources which are installed in parallel.  
   
   
       47 . The method of  claim 45 , wherein different reactive gases are selectively supplied by a plurality of reactive gas supply sources which are installed in parallel at the reactive gas supply pipe.  
   
   
       48 . The method of  claim 46 , wherein the different source gases are alternately supplied in source gas pulsing stages.  
   
   
       49 . The method of  claim 46 , wherein a plurality of source gas pulsing stages supplying one source gas among the different source gases are performed and then a plurality of source gas pulsing stages supplying another source gas are performed.  
   
   
       50 . The method of  claim 47 , wherein the different reactive gases are alternately supplied in reactive gas pulsing stages.  
   
   
       51 . The method of  claim 47 , wherein a plurality of reactive gas pulsing stages supplying one reactive gas among the different reactive gases are performed and then a plurality of reactive gas pulsing stages supplying another reactive gas are performed.  
   
   
       52 . The method of  claim 35 , wherein the 4-way valve is a 4-way diaphragm valve.  
   
   
       53 . The method of  claim 52 , wherein, when the 4-way diaphragm valve is closed, the purge gas is supplied to the reaction chamber and one of the first carrier gas and the source gas flows into the bypass, and when the 4-way diaphragm valve is open, the purge gas is supplied to the reaction chamber and one of the first carrier gas and the source gas flows into the bypass and the reaction chamber.  
   
   
       54 . The method of  claim 52 , wherein when the 4-way diaphragm valve is closed, the gate valve is open, the purge gas is supplied to the reaction chamber, and one of the first carrier gas and the source gas flows into the bypass, and when the 4-way diaphragm valve is open, the gate valve is closed and the purge gas and one of the first carrier gas and the source gas are supplied to the reaction chamber.  
   
   
       55 . An apparatus for fabricating a semiconductor device, the apparatus comprising: 
 a reaction chamber in which a substrate is processed to fabricate a semiconductor device;    a purge gas supply pipe connected to the reaction chamber to supply a purge gas to the reaction chamber;    a first 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the first 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe;    a second 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the second 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe and that the second 4-way valve is connected to the first 4-way valve in series;    a first source gas supply pipe and a second source gas supply pipe respectively connected to the second inlets of the respective first and second 4-way valves to supply a source gas to the reaction chamber;    first carrier gas supply pipes respectively connected to the first and second source gas supply pipes;    a reactive gas supply pipe connected to the reaction chamber to supply a reactive gas to the reaction chamber;    a second carrier gas supply pipe connected to the reactive gas supply pipe;    a discharge pipe connected to the reaction chamber to discharge gas from the reaction chamber;    a discharge pump installed at the discharge pipe;    a bypass comprising two branches respectively connected to the second outlets of the respective first and second 4-way valves and an end connected to the discharge pipe in front of the discharge pump; and    gate valves installed at the two branches, respectively, of the bypass.    
   
   
       56 . The apparatus of  claim 55 , further comprising a throttle valve installed at the discharge pipe between the reaction chamber and a junction of the discharge pipe and the bypass, wherein the branches of the bypass join each other before the bypass is connected to the discharge pipe.  
   
   
       57 . The apparatus of  claim 55 , further comprising: 
 first carrier gas supply sources respectively installed at ends of the respective first carrier gas supply pipes;    a first gate valve installed between one of the first carrier gas supply sources and the first 4-way valve and another first gate valve installed between another one of the first carrier gas supply sources and the second 4-way valve;    a first source gas supply source installed at an end of the first source gas supply pipe and a second source gas supply source installed at an end of the second source gas supply pipe;    a first carrier gas supply pipe branch extending from one of the first carrier gas supply pipes between a corresponding one of the first carrier gas supply sources and a corresponding one of the first gate valves to the first source gas supply source to selectively supply the first carrier gas to the first source gas supply source; and    another first carrier gas supply pipe branch extending from another one of the first carrier gas supply pipes between a corresponding one of the first carrier gas supply sources and a corresponding one of the first gate valves to the second source gas supply source to selectively supply the first carrier gas to the second source gas supply source,    wherein each of the first and second source gas supply pipes is connected to one of the first carrier gas supply pipes between one of the first and second 4-way valves and one of the first gate valves.    
   
   
       58 . The apparatus of  claim 55 , further comprising a different reactive gas supply source installed at the reactive gas supply pipe in parallel with the reactive gas supply source so that the reactive gas and a different reactive gas are selectively supplied.  
   
   
       59 . The apparatus of  claim 55 , wherein each of the first and second 4-way valves is a 4-way diaphragm valve.  
   
   
       60 . The apparatus of  claim 55 , wherein at least one gas among the source gas and the reactive gas is intermittently supplied to the reaction chamber.  
   
   
       61 . A method of fabricating a semiconductor device using an apparatus for fabricating a semiconductor device, the apparatus including a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a purge gas supply pipe connected to the reaction chamber to supply a purge gas to the reaction chamber; a first 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the first 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe; a second 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet, the second 4-way valve being installed at the purge gas supply pipe such that the first inlet and the first outlet are connected to the purge gas supply pipe and that the second 4-way valve is connected to the first 4-way valve in series; a first source gas supply pipe and a second source gas supply pipe respectively connected to the second inlets of the respective first and second 4-way valves to supply a source gas to the reaction chamber; first carrier gas supply pipes respectively connected to the first and second source gas supply pipes; a reactive gas supply pipe connected to the reaction chamber to supply a reactive gas to the reaction chamber; a second carrier gas supply pipe connected to the reactive gas supply pipe; a discharge pipe connected to the reaction chamber to discharge gas from the reaction chamber; a discharge pump installed at the discharge pipe; a bypass comprising two branches respectively connected to the second outlets of the respective first and second 4-way valves and an end connected to the discharge pipe in front of the discharge pump; and gate valves installed at the two branches, respectively, of the bypass, the method comprising: 
 loading the substrate into the reaction chamber;    attaching a source gas material to the substrate by selectively supplying one of the first and second source gases to the reaction chamber;    purging a source gas material that is not attached to the substrate by supplying the purge gas to the reaction chamber;    forming a first reaction product layer on the substrate by supplying the reactive gas to the reaction chamber to allow the reactive gas to react with the source gas material attached to the substrate; and    purging the reactive gas that has not reacted with the source gas material by supplying the purge gas to the reaction chamber.    
   
   
       62 . The method of  claim 61 , wherein the attaching of the source gas material comprises closing one of the gate valves installed at the bypass and opening the second inlet and the first outlet of one of the first and second 4-way valves to allow one of the first and second source gases to flow into the reaction chamber through one of the first and second source gas supply pipes.  
   
   
       63 . The method of  claim 61 , wherein purging of the source gas material comprises opening one of the gate valves installed at the bypass and simultaneously opening the second inlet and the second outlet of one of the first and second 4-way valves to allow the first carrier gas to flow into the bypass through one of the first and second source gas supply pipes.  
   
   
       64 . The method of  claim 61 , wherein the forming of the first reaction product layer comprises opening one of the gate valves installed at the bypass and simultaneously opening the second inlet and the second outlet of one of the first and second 4-way valves to allow the first carrier gas to flow into the bypass through one of the first and second source gas supply pipes.  
   
   
       65 . The method of  claim 61 , wherein the first source gas is stickier than the second source gas.