Inventor · disambiguated record
Weon-Hong Kim
Also filed as: KIM WEON-HONG
52 granted patents·15 pending applications·678 citations·filing 2004–2022
98Inventor score
Top patents by PatentIndex Score
67 records- 0199US9029244B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 12, 2015·417 cites·8 claims
- 0295US7002788B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 21, 2006·27 cites·7 claims
- 0393US9859392B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·9 cites·20 claims
- 0491US8476155B1Formation of a high-K crystalline dielectric compositionLIM HA-JIN·Filed 2010·Granted Jul 2, 2013·12 cites·17 claims
- 0591US7125767B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 24, 2006·15 cites·19 claims
- 0690US9318335B2Method for fabricating semiconductor device including nitrided gate insulatorKIM WEON-HONG·Filed 2015·Granted Apr 19, 2016·9 cites·19 claims
- 0790US7394641B2MEMS tunable capacitor with a wide tuning rangeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 1, 2008·15 cites·23 claims
- 0889US7704867B2Method of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 27, 2010·14 cites·16 claims
- 0988US7091548B2Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·35 cites·19 claims
- 1087US7491654B2Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·11 cites·20 claims
- 1185US9702041B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·4 claims
- 1284US10879392B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·19 claims
- 1384US7042698B2MEMS tunable capacitor with a wide tuning range and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 9, 2006·10 cites·13 claims
- 1482US8796087B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 5, 2014·4 cites·4 claims
- 1581US11949012B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 2, 2024·1 cites·20 claims
- 1681US9218977B2Fabricating method of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 22, 2015·5 cites·18 claims
- 1780US7232492B2Method of forming thin film for improved productivitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·23 cites·24 claims
- 1879US7316961B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·6 cites·28 claims
- 1978US7508649B2Multi-layered dielectric film of microelectronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 24, 2009·7 cites·14 claims
- 2076US9779996B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 3, 2017·2 cites·20 claims
- 2176US8563411B2Semiconductor devices having a diffusion barrier layer and methods of manufacturing the sameLIM HA-JIN·Filed 2011·Granted Oct 22, 2013·4 cites·20 claims
- 2275US8940611B2Semiconductor integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 27, 2015·2 cites·7 claims
- 2375US7435654B2Analog capacitor having at least three high-k dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·4 cites·18 claims
- 2473US7203052B2Method of fabricating MEMS tunable capacitor with wide tuning rangeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 10, 2007·5 cites·20 claims
- 2572US9922879B2Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 20, 2018·1 cites·20 claims
- 2672US7708969B2Method of forming metal oxideSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 4, 2010·1 cites·10 claims
- 2770US7476922B2Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 13, 2009·16 cites·7 claims
- 2868US8963227B2Semiconductor devices having a diffusion barrier layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 24, 2015·2 cites·17 claims
- 2967US9406502B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 2, 2016·0 cites·7 claims
- 3067US8815673B2Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknessesDO JIN-HO·Filed 2012·Granted Aug 26, 2014·3 cites·13 claims
- 3164US9431515B2Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 30, 2016·1 cites·20 claims
- 3264US7732296B2Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 8, 2010·4 cites·19 claims
- 3364US2011097905A1Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 3463US8471359B2Semiconductor device and method of fabricating the sameKIM WEON-HONG·Filed 2010·Granted Jun 25, 2013·1 cites·6 claims
- 3563US7855431B2Capacitor unit and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 21, 2010·2 cites·20 claims
- 3662US7679124B2Analog capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 16, 2010·1 cites·4 claims
- 3762US2006156980A1Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3861US7407897B2Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·2 cites·9 claims
- 3959US7563672B2Methods of fabricating integrated circuit devices including metal-insulator-metal capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·1 cites·7 claims
- 4058US7612399B2Semiconductor integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·1 cites·12 claims
- 4157US10312341B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·0 cites·17 claims
- 4257US7977257B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·1 cites·15 claims
- 4355US9023718B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 5, 2015·0 cites·4 claims
- 4454US2007178249A1Methods of forming metal layers using metal-organic chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4554US2007186857A1Plasma processing apparatus and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4653US8975171B1Method of forming a high-k crystalline dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 10, 2015·0 cites·7 claims
- 4753US2010170441A1Method of Forming Metal Oxide and Apparatus for Performing the SameWON SEOK-JUN·Filed 2010·Application pending·0 cites
- 4851US2006078678A1Method of forming a thin film by atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4949US7581550B2Method of cleaning reaction chamber using substrate having catalyst layer thereonSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·0 cites·23 claims
- 5048US8809999B2Semiconductor integrated circuit device and method of fabricating the sameKIM WEON-HONG·Filed 2010·Granted Aug 19, 2014·0 cites·10 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →