US2010170441A1PendingUtilityA1

Method of Forming Metal Oxide and Apparatus for Performing the Same

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Assignee: WON SEOK-JUNPriority: Jul 10, 2006Filed: Mar 23, 2010Published: Jul 8, 2010
Est. expiryJul 10, 2026(expired)· nominal 20-yr term from priority
C23C 16/52C23C 16/45525C23C 16/40C23C 16/505C23C 16/4582C23C 16/4408C01G 23/047C01P 2006/40C01G 25/02C01G 35/00C01G 27/02
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Claims

Abstract

In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.

Claims

exact text as granted — not AI-modified
1 . Apparatus for forming metal oxide comprising:
 a substrate stage having a support region for supporting a substrate and a peripheral region surrounding the support region;   a chamber disposed on the peripheral region to define a space in which the substrate is placed, the chamber having a gas inlet port for supplying a source gas including metal precursor to allow the source gas to flow along a surface of a substrate so that a metal precursor layer is formed on the substrate and supplying an oxidizing gas including ozone to allow the oxidizing gas to flow along a surface of the metal precursor layer to oxidize the metal precursor layer so that metal oxide is formed on the substrate; and   a radio frequency power source connected to the chamber for applying a radio frequency power to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas.   
   
   
       2 . The apparatus of  claim 1 , further comprising:
 a first gas supply section for supplying the source gas onto the substrate; and   a second gas supply section for supplying the oxidizing gas onto the metal precursor layer.   
   
   
       3 . The apparatus of  claim 2 , wherein the second gas supply section comprises an ozone generator. 
   
   
       4 . The apparatus of  claim 3 , wherein a concentration of the ozone in the oxidizing gas is in a range of about 100 g/m 3  to about 1000 g/m 3 . 
   
   
       5 . The apparatus of  claim 2 , further comprising a third gas supply section for supplying an oxygen gas onto the metal precursor layer before supplying the oxidizing gas. 
   
   
       6 . The apparatus of  claim 2 , further comprising a fourth gas supply section for supplying a purge gas onto the metal precursor layer and the metal oxide. 
   
   
       7 . The apparatus of  claim 1 , wherein the chamber comprising:
 a cover disposed on the peripheral region of the stage; and   a radio frequency electrode connected to the cover to face the substrate supported by the stage.   
   
   
       8 . The apparatus of  claim 7 , wherein the cover comprising:
 a ceiling portion disposed over the stage; and   a protruding portion extending downwardly from the ceiling portion and disposed on the peripheral region of the stage, wherein the protruding portion is ring-shaped.   
   
   
       9 . The apparatus of  claim 8 , wherein the radio frequency electrode is disposed on a lower surface of the ceiling portion and is disk-shaped. 
   
   
       10 . The apparatus of  claim 9 , wherein the gas inlet port is defined by an inner surface of the protruding portion and an outer surface of the radio frequency electrode, and the radio frequency electrode has channels connected to the gas inlet port for supplying the source gas and the oxidizing gas. 
   
   
       11 . The apparatus of  claim 10 , wherein each of the channels widens towards the outer surface of the radio frequency electrode. 
   
   
       12 . The apparatus of  claim 9 , wherein the chamber has an outlet port disposed opposite the gas inlet port. 
   
   
       13 . The apparatus of  claim 1 , further comprising an exhauster connected to the chamber for exhausting the source gas, the oxidizing gas and by-products of the reaction. 
   
   
       14 . The apparatus of  claim 1 , further comprising a driving section for rotating the stage. 
   
   
       15 . Apparatus for forming metal oxide comprising:
 a chamber to define a space in which a substrate is placed, the chamber having a gas inlet port for supplying a source gas including metal precursor to allow the source gas to flow along a surface of the substrate so that a metal precursor layer is formed on the substrate and supplying an oxidizing gas including ozone to allow the oxidizing gas to flow along a surface of the metal precursor layer to oxidize the metal precursor layer so that metal oxide is formed on the substrate;   a radio frequency power source connected to the chamber for applying a radio frequency power to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas; and   an exhauster connected to the chamber for exhausting the source gas, the oxidizing gas and by-products of the reaction.

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