Inventor · disambiguated record
Dorman C. Pitzer
Also filed as: PITZER DORMAN · PITZER DORMAN C
15 granted patents·1 pending application·793 citations·filing 1982–2010
95Inventor score
Top patents by PatentIndex Score
16 records- 0196US6838722B2Structures of and methods of fabricating trench-gated MIS devicesSILICONIX INC·Filed 2002·Granted Jan 4, 2005·98 cites·7 claims
- 0295US7005347B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 28, 2006·74 cites·17 claims
- 0395US5917216ATrenched field effect transistor with PN depletion barrierSILICONIX INC·Filed 1996·Granted Jun 29, 1999·164 cites·14 claims
- 0492US5404040AStructure and fabrication of power MOSFETs, including termination structuresSILICONIX INC·Filed 1993·Granted Apr 4, 1995·104 cites·31 claims
- 0591US7335946B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 26, 2008·43 cites·4 claims
- 0690US9324858B2Trench-gated MIS devicesBHALLA ANUP·Filed 2010·Granted Apr 26, 2016·8 cites·20 claims
- 0783US5521409AStructure of power mosfets, including termination structuresSILICONIX INC·Filed 1994·Granted May 28, 1996·47 cites·20 claims
- 0881US6348712B1High density trench-gated power MOSFETSILICONIX INC·Filed 1999·Granted Feb 19, 2002·43 cites·9 claims
- 0981US6277695B1Method of forming vertical planar DMOSFET with self-aligned contactSILICONIX INC·Filed 1999·Granted Aug 21, 2001·52 cites·15 claims
- 1079US5304831ALow on-resistance power MOS technologySILICONIX INC·Filed 1992·Granted Apr 19, 1994·62 cites·21 claims
- 1171US4561168AMethod of making shadow isolated metal DMOS FET deviceSILICONIX INC·Filed 1982·Granted Dec 31, 1985·24 cites·24 claims
- 1269US4599554AVertical MOSFET with current monitor utilizing common drain current mirrorTEXET CORPORTION·Filed 1984·Granted Jul 8, 1986·31 cites·6 claims
- 1367US5429964ALow on-resistance power MOS technologySILICONIX INC·Filed 1994·Granted Jul 4, 1995·35 cites·22 claims
- 1451US6534366B2Method of fabricating trench-gated power MOSFETSILICONIX INC·Filed 2001·Granted Mar 18, 2003·4 cites·17 claims
- 1540US2004113201A1Structures of and methods of fabricating trench-gated MIS devicesSILICONIX INC·Filed 2003·Application pending·0 cites
- 1636US5923979APlanar DMOS transistor fabricated by a three mask processSILICONIX INC·Filed 1997·Granted Jul 13, 1999·4 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →