Inventor · disambiguated record
Domagoj Siprak
Also filed as: SIPRAK DOMAGOJ
24 granted patents·7 pending applications·234 citations·filing 2001–2024
94Inventor score
Files withINFINEON TECHNOLOGIES AG12INTEL CORP10SIPRAK DOMAGOJ5BAUMGARTNER PETER2CALABRESE GIOVANNI1
Top patents by PatentIndex Score
31 records- 0197US7651920B2Noise reduction in semiconductor device using counter-dopingINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jan 26, 2010·121 cites·58 claims
- 0296US11641644B2Methods and devices for wireless communicationsINTEL CORP·Filed 2020·Granted May 2, 2023·27 cites·18 claims
- 0395US8716786B2Semiconductor device having different fin widthsBAUMGARTNER PETER·Filed 2009·Granted May 6, 2014·37 cites·21 claims
- 0494US7906802B2Semiconductor element and a method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2009·Granted Mar 15, 2011·24 cites·27 claims
- 0580US7947562B2Noise reduction in semiconductor device using counter-dopingINFINEON TECHNOLOGIES AG·Filed 2010·Granted May 24, 2011·4 cites·20 claims
- 0679US11380806B2Variable capacitance device with multiple two-dimensional electron gas (2DEG) layersINTEL CORP·Filed 2017·Granted Jul 5, 2022·2 cites·13 claims
- 0776US11373995B2Group III-nitride antenna diodeINTEL CORP·Filed 2017·Granted Jun 28, 2022·2 cites·18 claims
- 0875US2024373418A1Methods and devices for wireless communicationsINTEL CORP·Filed 2024·Application pending·0 cites
- 0973US7897956B2Biasing a transistor out of a supply voltage rangeINFINEON TECHNOLOGIES AG·Filed 2009·Granted Mar 1, 2011·4 cites·17 claims
- 1070US2023337213A1Methods and devices for wireless communicationsINTEL CORP·Filed 2023·Application pending·0 cites
- 1168US12034085B2Variable capacitance device with multiple two-dimensional electron gas (2DEG) layersINTEL CORP·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 1264US8372736B2Method and apparatus for reducing flicker noise in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2011·Granted Feb 12, 2013·1 cites·28 claims
- 1358US8149046B2Biasing for transistor-based apparatuses and methodsSIPRAK DOMAGOJ·Filed 2009·Granted Apr 3, 2012·1 cites·17 claims
- 1455US7977709B2MOS transistor and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 12, 2011·2 cites·10 claims
- 1553US8901624B2Schottky diodes having metal gate electrodes and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 2, 2014·0 cites·22 claims
- 1653US8143936B2Application of control signal and forward body-bias signal to an active deviceSIPRAK DOMAGOJ·Filed 2009·Granted Mar 27, 2012·0 cites·20 claims
- 1752US6714392B2Electronic component and utilization of a guard structure contained thereinINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 30, 2004·8 cites·8 claims
- 1850US2013214360A1Method and apparatus for reducing flicker noise in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
- 1950US2008135953A1Noise reduction in semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 2048US9654108B2Apparatus and method having reduced flicker noiseSIPRAK DOMAGOJ·Filed 2008·Granted May 16, 2017·1 cites·23 claims
- 2148US8518811B2Schottky diodes having metal gate electrodes and methods of formation thereofRIESS PHILIPP·Filed 2011·Granted Aug 27, 2013·0 cites·36 claims
- 2248US8431468B2Noise reduction in semiconductor devicesSIPRAK DOMAGOJ·Filed 2010·Granted Apr 30, 2013·0 cites·26 claims
- 2348US2008054361A1Method and apparatus for reducing flicker noise in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 2447US11545586B2Group III-nitride Schottky diodeINTEL CORP·Filed 2017·Granted Jan 3, 2023·0 cites·18 claims
- 2547US9583595B2Methods of forming low noise semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 28, 2017·0 cites·28 claims
- 2646US11424354B2Group III-nitride silicon controlled rectifierINTEL CORP·Filed 2017·Granted Aug 23, 2022·0 cites·20 claims
- 2746US9171726B2Low noise semiconductor devicesCALABRESE GIOVANNI·Filed 2009·Granted Oct 27, 2015·0 cites·29 claims
- 2845US2012146157A1Semiconductor device having different fin widthsBAUMGARTNER PETER·Filed 2012·Application pending·0 cites
- 2943US11552030B2High frequency capacitor with inductance cancellationINTEL CORP·Filed 2018·Granted Jan 10, 2023·0 cites·20 claims
- 3043US2013154773A1WaveguideSIPRAK DOMAGOJ·Filed 2011·Application pending·0 cites
- 3136US11380755B2Compound capacitor structuresINTEL CORP·Filed 2017·Granted Jul 5, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →