Inventor · disambiguated record
Eduard A. Cartier
Also filed as: CARTIER EDUARD · CARTIER EDUARD A · CARTIER EDUARD ALBERT
101 granted patents·15 pending applications·1,338 citations·filing 1999–2023
99Inventor score
Top patents by PatentIndex Score
116 records- 0198US7488656B2Removal of charged defects from metal oxide-gate stacksIBM·Filed 2005·Granted Feb 10, 2009·79 cites·10 claims
- 0297US7652332B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2007·Granted Jan 26, 2010·50 cites·13 claims
- 0397US7105889B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2004·Granted Sep 12, 2006·93 cites·26 claims
- 0497US6444592B1Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2000·Granted Sep 3, 2002·191 cites·22 claims
- 0596US11309383B1Quad-layer high-k for metal-insulator-metal capacitorsIBM·Filed 2020·Granted Apr 19, 2022·4 cites·25 claims
- 0695US8999831B2Method to improve reliability of replacement gate deviceIBM·Filed 2012·Granted Apr 7, 2015·11 cites·5 claims
- 0795US7696036B2CMOS transistors with differential oxygen content high-k dielectricsIBM·Filed 2007·Granted Apr 13, 2010·33 cites·7 claims
- 0895US6541079B1Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition techniqueIBM·Filed 1999·Granted Apr 1, 2003·148 cites·9 claims
- 0993US9472643B2Method to improve reliability of replacement gate deviceIBM·Filed 2015·Granted Oct 18, 2016·6 cites·10 claims
- 1093US8035173B2CMOS transistors with differential oxygen content high-K dielectricsIBM·Filed 2010·Granted Oct 11, 2011·14 cites·12 claims
- 1193US7871869B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2009·Granted Jan 18, 2011·24 cites·7 claims
- 1292US9171954B2FinFET structure and method to adjust threshold voltage in a FinFET structureIBM·Filed 2014·Granted Oct 27, 2015·9 cites·14 claims
- 1392US7741188B2Deep trench (DT) metal-insulator-metal (MIM) capacitorIBM·Filed 2008·Granted Jun 22, 2010·41 cites·16 claims
- 1492US7598545B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2005·Granted Oct 6, 2009·20 cites·28 claims
- 1592US7452767B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2006·Granted Nov 18, 2008·15 cites·4 claims
- 1691US8193051B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsBOJARCZUK JR NESTOR A·Filed 2011·Granted Jun 5, 2012·14 cites·11 claims
- 1791US7928514B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2009·Granted Apr 19, 2011·12 cites·16 claims
- 1891US7655994B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2005·Granted Feb 2, 2010·21 cites·19 claims
- 1991US7183604B2High dielectric constant deviceIMEC INTER UNI MICRO ELECTR·Filed 2003·Granted Feb 27, 2007·46 cites·11 claims
- 2091US6528374B2Method for forming dielectric stack without interfacial layerIBM·Filed 2001·Granted Mar 4, 2003·47 cites·20 claims
- 2190US10423805B2Encryption engine with an undetectable/tamper-proof private key in late node CMOS technologyIBM·Filed 2016·Granted Sep 24, 2019·5 cites·15 claims
- 2290US7807525B2Low power circuit structure with metal gate and high-k dielectricIBM·Filed 2009·Granted Oct 5, 2010·15 cites·11 claims
- 2390US7479683B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2004·Granted Jan 20, 2009·35 cites·17 claims
- 2490US7242055B2Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxideIBM·Filed 2004·Granted Jul 10, 2007·51 cites·34 claims
- 2589US7745278B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectricsIBM·Filed 2008·Granted Jun 29, 2010·10 cites·22 claims
- 2689US6511873B2High-dielectric constant insulators for FEOL capacitorsIBM·Filed 2001·Granted Jan 28, 2003·38 cites·19 claims
- 2789US6413386B1Reactive sputtering method for forming metal-silicon layerIBM·Filed 2000·Granted Jul 2, 2002·40 cites·22 claims
- 2888US7858500B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2008·Granted Dec 28, 2010·12 cites·20 claims
- 2987US11508438B1RRAM filament location based on NIR emissionIBM·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
- 3087US10833150B2Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structuresIBM·Filed 2018·Granted Nov 10, 2020·4 cites·14 claims
- 3186US6521977B1Deuterium reservoirs and ingress pathsIBM·Filed 2000·Granted Feb 18, 2003·30 cites·20 claims
- 3285US7723798B2Low power circuit structure with metal gate and high-k dielectricIBM·Filed 2007·Granted May 25, 2010·10 cites·10 claims
- 3384US11258012B2Oxygen-free plasma etching for contact etching of resistive random access memoryTOKYO ELECTRON LTD·Filed 2019·Granted Feb 22, 2022·5 cites·20 claims
- 3484US9754945B2Non-volatile memory device employing a deep trench capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 5, 2017·4 cites·10 claims
- 3584US9099393B2Enabling enhanced reliability and mobility for replacement gate planar and FinFET structuresIBM·Filed 2013·Granted Aug 4, 2015·5 cites·14 claims
- 3684US8772149B2FinFET structure and method to adjust threshold voltage in a FinFET structureCARTIER EDUARD A·Filed 2011·Granted Jul 8, 2014·5 cites·8 claims
- 3783US9299802B2Method to improve reliability of high-K metal gate stacksIBM·Filed 2012·Granted Mar 29, 2016·4 cites·20 claims
- 3882US8187961B2Threshold adjustment for high-K gate dielectric CMOSDORIS BRUCE B·Filed 2009·Granted May 29, 2012·8 cites·9 claims
- 3981US8932949B2FinFET structure and method to adjust threshold voltage in a FinFET structureIBM·Filed 2014·Granted Jan 13, 2015·3 cites·17 claims
- 4081US7999323B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2009·Granted Aug 16, 2011·7 cites·18 claims
- 4181US6831339B2Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming sameIBM·Filed 2001·Granted Dec 14, 2004·24 cites·10 claims
- 4277US12225833B2Oxide-based resistive memory having a plasma-exposed bottom electrodeIBM·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4377US8716118B2Replacement gate structure for transistor with a high-K gate stackANDO TAKASHI·Filed 2012·Granted May 6, 2014·4 cites·9 claims
- 4476US7919379B2Dielectric spacer removalIBM·Filed 2007·Granted Apr 5, 2011·5 cites·14 claims
- 4575US9391164B2Method to improve reliability of replacement gate deviceIBM·Filed 2015·Granted Jul 12, 2016·1 cites·2 claims
- 4675US8304306B2Fabrication of devices having different interfacial oxide thickness via lateral oxidationCAI JIN·Filed 2011·Granted Nov 6, 2012·3 cites·14 claims
- 4775US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 4875US7078301B2Rare earth metal oxide memory element based on charge storage and method for manufacturing sameIBM·Filed 2004·Granted Jul 18, 2006·14 cites·19 claims
- 4974US10978551B2Surface area enhancement for stacked metal-insulator-metal (MIM) capacitorIBM·Filed 2017·Granted Apr 13, 2021·1 cites·15 claims
- 5073US8097500B2Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor deviceANDO TAKASHI·Filed 2008·Granted Jan 17, 2012·6 cites·13 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →