Inventor · disambiguated record
Edward J. Nowak
Also filed as: NOWAK EDWARD · NOWAK EDWARD J · NOWAK EDWARD JOSEPH · NOWAK JR EDWARD J
502 granted patents·43 pending applications·9,476 citations·filing 1978–2021
99Inventor score
Top patents by PatentIndex Score
545 records- 0199US10332803B1Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of formingGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 25, 2019·83 cites·20 claims
- 0299US9680473B1Ultra dense vertical transport FET circuitsIBM·Filed 2016·Granted Jun 13, 2017·79 cites·18 claims
- 0399US9613861B2Damascene wires with top via structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 4, 2017·60 cites·17 claims
- 0499US9299835B1Vertical field effect transistorsIBM·Filed 2014·Granted Mar 29, 2016·141 cites·9 claims
- 0599US7411252B2Substrate backgate for trigate FETIBM·Filed 2005·Granted Aug 12, 2008·156 cites·16 claims
- 0699US7259420B2Multiple-gate device with floating back gateIBM·Filed 2004·Granted Aug 21, 2007·249 cites·21 claims
- 0799US7101763B1Low capacitance junction-isolation for bulk FinFET technologyIBM·Filed 2005·Granted Sep 5, 2006·560 cites·20 claims
- 0899US7091551B1Four-bit FinFET NVRAM memory deviceIBM·Filed 2005·Granted Aug 15, 2006·163 cites·22 claims
- 0999US6849884B2Strained Fin FETs structure and methodIBM·Filed 2003·Granted Feb 1, 2005·228 cites·18 claims
- 1099US6635909B2Strained fin FETs structure and methodIBM·Filed 2002·Granted Oct 21, 2003·237 cites·18 claims
- 1199US6252284B1Planarized silicon fin deviceIBM·Filed 1999·Granted Jun 26, 2001·291 cites·7 claims
- 1298US9570357B2Vertical field effect transistorsIBM·Filed 2015·Granted Feb 14, 2017·17 cites·18 claims
- 1398US9087897B1Semiconductor structures with pair(s) of vertical field effect transistors, each pair having a shared source/drain region and methods of forming the structuresIBM·Filed 2014·Granted Jul 21, 2015·55 cites·20 claims
- 1498US7851865B2Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structureIBM·Filed 2007·Granted Dec 14, 2010·102 cites·20 claims
- 1598US7732859B2Graphene-based transistorIBM·Filed 2007·Granted Jun 8, 2010·91 cites·14 claims
- 1698US7692254B2Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structureIBM·Filed 2007·Granted Apr 6, 2010·83 cites·20 claims
- 1798US7681628B2Dynamic control of back gate bias in a FinFET SRAM cellIBM·Filed 2006·Granted Mar 23, 2010·131 cites·13 claims
- 1898US7456471B2Field effect transistor with raised source/drain fin strapsIBM·Filed 2006·Granted Nov 25, 2008·85 cites·20 claims
- 1998US6949768B1Planar substrate devices integrated with finfets and method of manufactureIBM·Filed 2004·Granted Sep 27, 2005·136 cites·19 claims
- 2098US6867460B1FinFET SRAM cell with chevron FinFET logicIBM·Filed 2003·Granted Mar 15, 2005·214 cites·30 claims
- 2197US9786788B1Vertical-transport FinFET device with variable Fin pitchGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·31 cites·15 claims
- 2297US9502407B1Integrating a planar field effect transistor (FET) with a vertical FETIBM·Filed 2015·Granted Nov 22, 2016·13 cites·10 claims
- 2397US9373641B2Methods of forming field effect transistors using a gate cut process following final gate formationIBM·Filed 2014·Granted Jun 21, 2016·28 cites·17 claims
- 2497US9263442B2Replacement gate structures and methods of manufacturingIBM·Filed 2015·Granted Feb 16, 2016·17 cites·12 claims
- 2597US8076204B2Graphene-based transistorANDERSON BRENT A·Filed 2010·Granted Dec 13, 2011·31 cites·20 claims
- 2697US7960791B2Dense pitch bulk FinFET process by selective EPI and etchIBM·Filed 2005·Granted Jun 14, 2011·76 cites·19 claims
- 2797US7341902B2Finfet/trigate stress-memorization methodIBM·Filed 2006·Granted Mar 11, 2008·50 cites·20 claims
- 2897US7183142B2FinFETs with long gate length at high densityIBM·Filed 2005·Granted Feb 27, 2007·58 cites·20 claims
- 2997US6998684B2High mobility plane CMOS SOIIBM·Filed 2004·Granted Feb 14, 2006·149 cites·19 claims
- 3097US5629544ASemiconductor diode with silicide films and trench isolationIBM·Filed 1995·Granted May 13, 1997·202 cites·42 claims
- 3196US9786507B2Methods of forming field effect transistors using a gate cut process following final gate formationIBM·Filed 2016·Granted Oct 10, 2017·14 cites·18 claims
- 3296US9653360B2Vertical field effect transistorsIBM·Filed 2015·Granted May 16, 2017·9 cites·17 claims
- 3396US9613955B1Hybrid circuit including a tunnel field-effect transistorIBM·Filed 2015·Granted Apr 4, 2017·23 cites·6 claims
- 3496US9064943B1Gate-all-around field effect transistor structures and methodsIBM·Filed 2014·Granted Jun 23, 2015·26 cites·20 claims
- 3596US8492820B2Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuitANDERSON BRENT A·Filed 2012·Granted Jul 23, 2013·20 cites·19 claims
- 3696US7309626B2Quasi self-aligned source/drain FinFET processIBM·Filed 2005·Granted Dec 18, 2007·139 cites·11 claims
- 3796US7256078B2High mobility plane FinFETs with equal drive strengthIBM·Filed 2007·Granted Aug 14, 2007·36 cites·20 claims
- 3896US6909147B2Multi-height FinFETSIBM·Filed 2003·Granted Jun 21, 2005·171 cites·35 claims
- 3996US6767793B2Strained fin FETs structure and methodIBM·Filed 2003·Granted Jul 27, 2004·90 cites·18 claims
- 4096US6432754B1Double SOI device with recess etch and epitaxyIBM·Filed 2001·Granted Aug 13, 2002·141 cites·24 claims
- 4196US5874836AHigh reliability I/O stacked fetsIBM·Filed 1996·Granted Feb 23, 1999·129 cites·10 claims
- 4295US10418484B1Vertical field effect transistors incorporating U-shaped semiconductor bodies and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·12 cites·20 claims
- 4395US10332801B2Vertical field effect transistorsIBM·Filed 2018·Granted Jun 25, 2019·5 cites·12 claims
- 4495US10002962B2Vertical FET structureIBM·Filed 2016·Granted Jun 19, 2018·11 cites·18 claims
- 4595US9755071B1Merged gate for vertical transistorsIBM·Filed 2016·Granted Sep 5, 2017·10 cites·15 claims
- 4695US9224837B2Semiconductor structures with pair(s) of vertical field effect transistors, each pair having a shared source/drain region and methods of forming the structuresIBM·Filed 2015·Granted Dec 29, 2015·12 cites·20 claims
- 4795US8232627B2Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the deviceBRYANT ANDRES·Filed 2009·Granted Jul 31, 2012·36 cites·20 claims
- 4895US7952088B2Semiconducting device having graphene channelIBM·Filed 2008·Granted May 31, 2011·34 cites·20 claims
- 4995US7368354B2Planar substrate devices integrated with FinFETs and method of manufactureIBM·Filed 2005·Granted May 6, 2008·33 cites·20 claims
- 5095US6512269B1High-voltage high-speed SOI MOSFETIBM·Filed 2000·Granted Jan 28, 2003·96 cites·12 claims
Showing the top 50 of 545 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →