Inventor · disambiguated record
Erwin Bacher
Also filed as: BACHER ERWIN
8 granted patents·3 pending applications·15 citations·filing 2006–2022
77Inventor score
Files withINFINEON TECHNOLOGIES AG3GIESECKE & DEVRIENT CURRENCY TECHNOLOGY GMBH2INFINEON TECHNOLOGIES AUSTRIA2INFINEON TECHNOLOGIES AUSTRIA AG2BACHER ERWIN1
Top patents by PatentIndex Score
11 records- 0190US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 0262US2024308264A1Security element and method for producing sameGIESECKE & DEVRIENT CURRENCY TECHNOLOGY GMBH·Filed 2022·Application pending·0 cites
- 0352US10090215B2System and method for dual-region singulationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 2, 2018·0 cites·19 claims
- 0451US12331464B2Electrically conductive paper structure, method for manufacturing same and useGIESECKE & DEVRIENT CURRENCY TECHNOLOGY GMBH·Filed 2020·Granted Jun 17, 2025·0 cites·16 claims
- 0551US9142444B2Semiconductor component and method for producing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 22, 2015·0 cites·14 claims
- 0650US2010078716A1Semiconductor component and method for producing a semiconductor componentBACHER ERWIN·Filed 2009·Application pending·0 cites
- 0748US9306011B2Semiconductor device having areas with different conductivity types and different doping concentrationsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 5, 2016·0 cites·15 claims
- 0847US9799521B2Semiconductor device having areas with different conductivity types and different dopingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 24, 2017·0 cites·5 claims
- 0947US9583406B2System and method for dual-region singulationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 28, 2017·0 cites·33 claims
- 1046US2011294289A1Method for Producing a Connection Electrode for Two Semiconductor Zones Arranged One Above AnotherREIGER WALTER·Filed 2010·Application pending·0 cites
- 1143US7601596B2Semiconductor device with trench transistors and method for manufacturing such a deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Oct 13, 2009·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →