Method for Producing a Connection Electrode for Two Semiconductor Zones Arranged One Above Another

Abstract

A method for producing a connection electrode for a first and second adjacent and complementarily doped semiconductor zones includes a step of producing a trench extending through the first semiconductor zone into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes producing a first connection zone in the first semiconductor zone by implanting dopant atoms into the sidewalls at least at a first angle. The method further includes producing a second connection zone in the second semiconductor zone by implanting dopant atoms at least at a second, different angle. The method also includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.

1 . A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone, which are arranged one above another and are doped complementarily with respect to one another, the method comprising:
 producing a trench extending through the first semiconductor zone into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench,   producing a first connection zone in the first semiconductor zone by implanting dopant atoms into the sidewalls at least at a first angle relative to the sidewalls, and is performed after the trench has been produced,   producing a second connection zone in the second semiconductor zone by implanting dopant atoms at least at a second angle, which is different from the first angle, relative to the sidewalls,   depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.   
     
     
         2 . The method as claimed in  claim 1 , wherein, prior to the production of the electrode layer, a barrier layer is applied to the sidewalls and the bottom of the trench. 
     
     
         3 . The method as claimed in  claim 2 , wherein, prior to producing the first connection zone, a screen layer is applied to the sidewalls and the bottom of the trench. 
     
     
         4 . The method as claimed in  claim 1 , wherein the first angle relative to the sidewalls is greater than the second angle relative to the sidewalls. 
     
     
         5 . The method as claimed in  claim 4 , wherein, prior to the production of the electrode layer, a barrier layer is applied to the sidewalls and the bottom of the trench. 
     
     
         6 . The method as claimed in  claim 4 , wherein, prior to producing the first connection zone, a screen layer is applied to the sidewalls and the bottom of the trench. 
     
     
         7 . The method as claimed in  claim 6 , wherein, prior to the production of the electrode layer, a barrier layer is applied to the sidewalls and the bottom of the trench. 
     
     
         8 . The method as claimed in  claim 1 , wherein, prior to producing the first connection zone, a screen layer is applied to the sidewalls and the bottom of the trench.