Inventor · disambiguated record
Rudolf Zelsacher
Also filed as: ZELSACHER RUDOLF
25 granted patents·6 pending applications·251 citations·filing 2000–2017
95Inventor score
Files withINFINEON TECHNOLOGIES AG18INFINEON TECHNOLOGIES AUSTRIA5WOOD ANDREW2BACHER ERWIN1HIRLER FRANZ1
Top patents by PatentIndex Score
31 records- 0196US6410391B1Method for producing an EEPROM memory cell with a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jun 25, 2002·120 cites·10 claims
- 0291US7414286B2Trench transistor and method for fabricating a trench transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 19, 2008·18 cites·15 claims
- 0390US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 0488US8084865B2Anchoring structure and intermeshing structureHIRLER FRANZ·Filed 2008·Granted Dec 27, 2011·17 cites·13 claims
- 0585US9029200B2Method for manufacturing semiconductor devices having a metallisation layerZELSACHER RUDOLF·Filed 2010·Granted May 12, 2015·10 cites·9 claims
- 0678US7612408B2MOS transistor deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 3, 2009·28 cites·16 claims
- 0776US8362551B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Jan 29, 2013·4 cites·22 claims
- 0873US7790550B2Trench transistor and method for fabricating a trench transistorINFINEON TECHNOLOGIES AG·Filed 2008·Granted Sep 7, 2010·4 cites·13 claims
- 0971US9397055B2Processing of thick metal padsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 19, 2016·2 cites·18 claims
- 1071US8269282B2Semiconductor component and method for producing a semiconductor componentWOOD ANDREW·Filed 2010·Granted Sep 18, 2012·3 cites·5 claims
- 1169US8030703B2Field-effect transistor and method for manufacturing a field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 4, 2011·4 cites·20 claims
- 1268US9171950B2Semiconductor component and method for producing a semiconductor componentWOOD ANDREW·Filed 2012·Granted Oct 27, 2015·2 cites·14 claims
- 1363US7863680B2Semiconductor component and method for producing itINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 4, 2011·2 cites·25 claims
- 1461US6948847B2Temperature sensor for a MOS circuit configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 27, 2005·13 cites·15 claims
- 1560US6661086B2Three-dimensionally embodied circuit with electrically connected semiconductor chipsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 9, 2003·9 cites·6 claims
- 1657US10670972B2Method and apparatus for exposing a structure on a substrateINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 2, 2020·0 cites·17 claims
- 1756US9030028B2Method for manufacturing semiconductor devices having a metallisation layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 12, 2015·0 cites·3 claims
- 1853US9343381B2Semiconductor component with integrated crack sensor and method for detecting a crack in a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 17, 2016·0 cites·18 claims
- 1951US9887152B2Method for manufacturing semiconductor devices having a metallisation layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 6, 2018·0 cites·15 claims
- 2051US9673157B2Processing of thick metal padsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 6, 2017·0 cites·26 claims
- 2151US9142444B2Semiconductor component and method for producing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 22, 2015·0 cites·14 claims
- 2251US8044459B2Semiconductor device with trench field plate including first and second semiconductor materialsINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Oct 25, 2011·0 cites·22 claims
- 2350US2010078716A1Semiconductor component and method for producing a semiconductor componentBACHER ERWIN·Filed 2009·Application pending·0 cites
- 2446US2016254200A1Method for Detecting a Crack in a Semiconductor Body of a Semiconductor ComponentINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 2546US2011294289A1Method for Producing a Connection Electrode for Two Semiconductor Zones Arranged One Above AnotherREIGER WALTER·Filed 2010·Application pending·0 cites
- 2645US9406572B2Method for processing a substrate and a method of process screening for integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 2, 2016·0 cites·19 claims
- 2743US7601596B2Semiconductor device with trench transistors and method for manufacturing such a deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Oct 13, 2009·0 cites·8 claims
- 2840US2005194662A1Semiconductor component and micromechanical structureINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2939US2018082882A1Wafer Chuck, Use of the Wafer Chuck and Method for Testing a Semiconductor WaferINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
- 3038US7446373B2Semiconductor component and method for producing itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 4, 2008·0 cites·24 claims
- 3132US2004027877A1Method for setting the threshold voltage of a field-effect transistor, field-effect transistor and integrated circuitFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →