Inventor · disambiguated record
Eun-Kyung Baek
Also filed as: BAEK EUN K · BAEK EUN-KYUNG
9 granted patents·10 pending applications·52 citations·filing 2003–2010
85Inventor score
Top patents by PatentIndex Score
19 records- 0189US7674685B2Semiconductor device isolation structures and methods of fabricating such structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·21 cites·32 claims
- 0278US7842569B2Flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 30, 2010·7 cites·18 claims
- 0378US7410915B2Method of forming carbon polymer film using plasma CVDASM JAPAN·Filed 2006·Granted Aug 12, 2008·6 cites·40 claims
- 0473US8043914B2Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·4 cites·15 claims
- 0567US7858492B2Method of filling a trench and method of forming an isolating layer structure using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 28, 2010·4 cites·20 claims
- 0663US6774048B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 10, 2004·9 cites·19 claims
- 0757US8026147B2Method of fabricating a semiconductor microstructureSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 27, 2011·1 cites·11 claims
- 0851US7867924B2Methods of reducing impurity concentration in isolating films in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·0 cites·19 claims
- 0948US2007065597A1Plasma CVD film formation apparatus provided with maskSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1046US2010072569A1Method of forming an isolation layer, method of manufacturing a semiconductor device using the same, and semiconductor device having an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1145US7781304B2Semiconductor device having trench isolation region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·0 cites·23 claims
- 1245US2006102940A1Semiconductor device having a photodetector and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1344US2009045483A1Semiconductor devices having trench isolation regions and methods of manufacturing semiconductor devices having trench isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1442US2011037109A1Semiconductor devices including lower and upper device isolation patternsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 1541US2007020879A1Method of forming an isolation layer and method of manufacturing a field effect transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1640US2007004139A1Method of manufacturing a non-volatile semiconductor deviceKIM HONG-GUN·Filed 2006·Application pending·0 cites
- 1739US2006068599A1Methods of forming a thin layer for a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1838US2008121977A1Semiconductor device and method of manufacturing having the sameCHOI YONG-SOON·Filed 2007·Application pending·0 cites
- 1937US2004169283A1Integrated circuit devices and methods of forming the same that have a low dielectric insulating interlayer between conductive structuresFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →