Inventor · disambiguated record

Feng-Ching Chu

Also filed as: CHU FENG · CHU FENG-CHING

46 granted patents·17 pending applications·40 citations·filing 2009–2025

97Inventor score

Technology areasH10P H10W H10D H01L B44C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD62 SHENZHEN FUTAIHONG PREC IND CO1

Top patents by PatentIndex Score

63 records

0198US11575047B2Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·3 cites·20 claims
0297US12027626B2Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
0397US11901236B2Semiconductor structure with gate-all-around devices and stacked FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
0496US10217815B1Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 26, 2019·10 cites·20 claims
0595US11631736B2Epitaxial source/drain feature with enlarged lower section interfacing with backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·3 cites·20 claims
0694US12015060B2Structure and formation method of semiconductor device with backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
0792US2025366012A1Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0890US10497628B2Methods of forming epitaxial structures in fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·20 claims
0988US12471306B2Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
1088US12324201B2Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
1188US10403551B2Source/drain features with an etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 3, 2019·3 cites·20 claims
1288US2025311378A1Semiconductor structure with gate-all-around devices and stacked finfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1387US2025359207A1Epitaxial source/drain feature with enlarged lower section interfacing with backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1486US12369383B2Semiconductor structure with gate-all-around devices and stacked FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
1586US11088245B2Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·1 cites·20 claims
1686US10756171B2Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
1786US2024363754A1Semiconductor device structure with cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1885US12501601B2Method for forming different types of devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
1985US12408377B2Semiconductor device structure with backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
2085US2024363438A1Methods of forming epitaxial structures in fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2184US11508736B2Method for forming different types of devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·1 cites·20 claims
2284US10867861B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
2384US2025318189A1Asymmetric Source/Drain for Backside Source ContactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2483US12356662B2Asymmetric source/drain for backside source contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
2583US12068204B2Methods of forming epitaxial structures in fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
2683US11515211B2Cut EPI process and structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·1 cites·20 claims
2783US2025344458A1Epitaxial FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2883US2025324664A1Semiconductor device structure with backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2982US10522680B2Finfet semiconductor device structure with capped source drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·2 cites·20 claims
3081US12107165B2Semiconductor device structure with cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
3181US11854688B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
3280US12245432B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
3380US11908748B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
3479US12432990B2Epitaxial source/drain feature with enlarged lower section interfacing with backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
3578US2024194537A1Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3677US11894421B2Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
3777US2024387739A1Epitaxial FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3875US11917803B2Method for forming different types of devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
3975US11810825B2Methods of forming epitaxial structures in fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
4075US11569386B2Method for forming semiconductor device structure with cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
4175US2025176183A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4275US2024387028A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4374US2025301658A1Semiconductor memory structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4473US12272729B2Asymmetric source/drain for backside source contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
4573US12211749B2Cut EPI process and structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
4673US11217490B2Source/drain features with an etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
4772US11328960B2Semiconductor structure with gate-all-around devices and stacked FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
4871US12408363B2Semiconductor device with phosphorus-doped epitaxial featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
4971US11502005B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
5070US12408347B2Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims

Showing the top 50 of 63 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →