Inventor · disambiguated record
Fengyi Jiang
Also filed as: JIANG FENGYI
23 granted patents·8 pending applications·129 citations·filing 2006–2012
94Inventor score
Top patents by PatentIndex Score
31 records- 0188US7758695B2Method for fabricating metal substrates with high-quality surfacesLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jul 20, 2010·11 cites·28 claims
- 0288US7741632B2InGaAIN light-emitting device containing carbon-based substrate and method for making the sameLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jun 22, 2010·24 cites·20 claims
- 0387US8426325B2Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrateWANG LI·Filed 2011·Granted Apr 23, 2013·5 cites·10 claims
- 0486US8222063B2Method for fabricating robust light-emitting diodesWANG LI·Filed 2008·Granted Jul 17, 2012·13 cites·8 claims
- 0584US7615420B2Method for manufacturing indium gallium aluminium nitride thin film on silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Nov 10, 2009·10 cites·19 claims
- 0682US8435816B2Method for fabricating InGaAlN light emitting device on a combined substrateXIONG CHUANBING·Filed 2008·Granted May 7, 2013·17 cites·18 claims
- 0782US8361880B2Semiconductor light-emitting device with metal support substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Jan 29, 2013·11 cites·11 claims
- 0877US7943942B2Semiconductor light-emitting device with double-sided passivationLATTICE POWER JIANGXI CORP·Filed 2008·Granted May 17, 2011·6 cites·20 claims
- 0977US7692205B2Semiconductor light-emitting deviceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 6, 2010·8 cites·6 claims
- 1076US7829359B2Method for fabricating highly reflective ohmic contact in light-emitting devicesLATTICE POWER JIANGXI CORP·Filed 2008·Granted Nov 9, 2010·7 cites·11 claims
- 1170US8383438B2Method for fabricating InGaAIN light-emitting diodes with a metal substrateLATTICE POWER JIANGXI CORP·Filed 2008·Granted Feb 26, 2013·4 cites·16 claims
- 1268US7705348B2Semiconductor light-emitting device with electrode for N-polar InGaAIN surfaceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 27, 2010·3 cites·9 claims
- 1365US7888779B2Method of fabrication InGaAIN film and light-emitting device on a silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 15, 2011·3 cites·24 claims
- 1464US7919784B2Semiconductor light-emitting device and method for making sameLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 5, 2011·2 cites·11 claims
- 1562US8044416B2Method for fabricating high-power light-emitting diode arraysLATTICE POWER JIANGXI CORP·Filed 2008·Granted Oct 25, 2011·2 cites·7 claims
- 1659US8354665B2Semiconductor light-emitting devices for generating arbitrary colorLATTICE POWER JIANGXI CORP·Filed 2008·Granted Jan 15, 2013·2 cites·14 claims
- 1759US8053757B2Gallium nitride light-emitting device with ultra-high reverse breakdown voltageLATTICE POWER JIANGXI CORP·Filed 2007·Granted Nov 8, 2011·1 cites·27 claims
- 1851US2011133158A1Method for fabricating ingan-based multi-quantum well layersLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 1950US2008261403A1Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrateLATTICE POWER JIANGXI CORP·Filed 2007·Application pending·0 cites
- 2046US8461029B2Method for fabricating InGaN-based multi-quantum well layersJIANG FENGYI·Filed 2012·Granted Jun 11, 2013·0 cites·11 claims
- 2146US7977663B2Semiconductor light-emitting device with a highly reflective ohmic-electrodeLATTICE POWER JIANGXI CORP·Filed 2008·Granted Jul 12, 2011·0 cites·16 claims
- 2246US2011140081A1Method for fabricating semiconductor light-emitting device with double-sided passivationLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2345US2011147704A1Semiconductor light-emitting device with passivation layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2445US2011147705A1Semiconductor light-emitting device with silicone protective layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2545US2011253972A1LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILMLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2643US2011133159A1Semiconductor light-emitting device with passivation in p-type layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2740US8431936B2Method for fabricating a p-type semiconductor structureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·12 claims
- 2840US8431475B2Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperatureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·18 claims
- 2940US7902556B2Method for fabricating high-quality semiconductor light-emitting devices on silicon substratesLATTICE POWER JIANGXI CORP·Filed 2006·Granted Mar 8, 2011·0 cites·7 claims
- 3040US2011298005A1Method for fabricating an n-type semiconductor material using silane as a precursorJIANG FENGYI·Filed 2007·Application pending·0 cites
- 3139US8384100B2InGaAIN light-emitting device and manufacturing method thereofLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 26, 2013·0 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Fengyi Jiang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →