Inventor · disambiguated record
Federico Nardi
Also filed as: NARDI FEDERICO
30 granted patents·5 pending applications·197 citations·filing 2012–2021
96Inventor score
Top patents by PatentIndex Score
35 records- 0197US10262730B1Multi-state and confined phase change memory with vertical cross-point structureSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 16, 2019·25 cites·20 claims
- 0297US10050194B1Resistive memory device including a lateral air gap around a memory element and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 14, 2018·31 cites·9 claims
- 0396US10147876B1Phase change memory electrode with multiple thermal interfacesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 4, 2018·23 cites·18 claims
- 0495US9018037B1Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devicesINTERMOLECULAR INC·Filed 2013·Granted Apr 28, 2015·14 cites·12 claims
- 0594US9246087B1Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·15 cites·18 claims
- 0694US9246091B1ReRAM cells with diffusion-resistant metal silicon oxide layersINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·14 cites·11 claims
- 0794US9178000B1Resistive random access memory cells having shared electrodes with transistor devicesINTERMOLECULAR INC·Filed 2014·Granted Nov 3, 2015·22 cites·18 claims
- 0893US9224951B1Current-limiting electrodesINTERMOLECULAR INC·Filed 2014·Granted Dec 29, 2015·11 cites·20 claims
- 0990US9246094B2Stacked bi-layer as the low power switchable RRAMINTERMOLECULAR INC·Filed 2013·Granted Jan 26, 2016·8 cites·19 claims
- 1085US10943952B2Threshold switch for memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 9, 2021·6 cites·18 claims
- 1183US10374014B2Multi-state phase change memory device with vertical cross-point structureSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 6, 2019·4 cites·20 claims
- 1282US11948630B2Two-terminal one-time programmable fuses for memory cellsAPPLIED MATERIALS INC·Filed 2021·Granted Apr 2, 2024·1 cites·20 claims
- 1381US11101326B2Methods of forming a phase change memory with vertical cross-point structureSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 24, 2021·1 cites·20 claims
- 1481US8866118B2Morphology control of ultra-thin MeOx layerINTERMOLECULAR INC·Filed 2012·Granted Oct 21, 2014·4 cites·16 claims
- 1579US10290348B1Write-once read-many amorphous chalcogenide-based memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·4 cites·27 claims
- 1676US11017856B1Soft reset for multi-level programming of memory cells in non-Von Neumann architecturesAPPLIED MATERIALS INC·Filed 2020·Granted May 25, 2021·1 cites·11 claims
- 1773US9680092B2Current selectors formed using single stack structuresINTERMOLECULAR INC·Filed 2016·Granted Jun 13, 2017·2 cites·14 claims
- 1873US9047940B2Resistive random access memory cells having variable switching characteristicsINTERMOLECULAR INC·Filed 2013·Granted Jun 2, 2015·5 cites·14 claims
- 1966US9000819B1Resistive switching schmitt triggers and comparatorsINTERMOLECULAR INC·Filed 2013·Granted Apr 7, 2015·2 cites·6 claims
- 2063US11790989B2Soft reset for multi-level programming of memory cells in non-von neumann architecturesAPPLIED MATERIALS INC·Filed 2021·Granted Oct 17, 2023·0 cites·19 claims
- 2163US9786368B2Two stage forming of resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Oct 10, 2017·1 cites·15 claims
- 2261US9620205B2All around electrode for novel 3D RRAM applicationsINTERMOLECULAR INC·Filed 2013·Granted Apr 11, 2017·2 cites·20 claims
- 2361US9012879B2Morphology control of ultra-thin MeOx layerINTERMOLECULAR INC·Filed 2014·Granted Apr 21, 2015·0 cites·19 claims
- 2457US9178140B2Morphology control of ultra-thin MeOx layerINTERMOLECULAR INC·Filed 2015·Granted Nov 3, 2015·0 cites·18 claims
- 2553US9054634B1Voltage controlling assemblies including variable resistance devicesINTERMOLECULAR INC·Filed 2013·Granted Jun 9, 2015·1 cites·20 claims
- 2652US11397790B2Vector matrix multiplication with 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 26, 2022·0 cites·20 claims
- 2751US11088206B2Methods of forming a phase change memory with vertical cross-point structureSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 10, 2021·0 cites·18 claims
- 2850US11361829B2In-storage logic for hardware acceleratorsSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 2947US2020401534A1Storage class memory with in-memory one-time pad securitySANDISK TECHNOLOGIES LLC·Filed 2019·Application pending·0 cites
- 3043US2015170923A1Feature Size Reduction in Semiconductor Devices by Selective Wet EtchingINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 3143US2016181091A1Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 3242US8872152B2IL-free MIM stack for clean RRAM devicesINTERMOLECULAR INC·Filed 2012·Granted Oct 28, 2014·0 cites·18 claims
- 3338US9245649B2Resistive switching sample and holdINTERMOLECULAR INC·Filed 2013·Granted Jan 26, 2016·0 cites·17 claims
- 3436US2017104031A1Selector ElementsINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
- 3536US2015179930A1Schottky Barriers for Resistive Random Access Memory CellsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Federico Nardi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →