Inventor · disambiguated record
Feng Wang
Also filed as: WANG FENG · Wang feng shou
11 granted patents·1 pending application·2,137 citations·filing 2003–2023
94Inventor score
Top patents by PatentIndex Score
12 records- 0198US8187951B1CVD flowable gap fillWANG FENG·Filed 2009·Granted May 29, 2012·550 cites·12 claims
- 0298US7629227B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2007·Granted Dec 8, 2009·78 cites·23 claims
- 0398US7208389B1Method of porogen removal from porous low-k films using UV radiationNOVELLUS SYSTEMS INC·Filed 2003·Granted Apr 24, 2007·602 cites·38 claims
- 0496US7888273B1Density gradient-free gap fillNOVELLUS SYSTEMS INC·Filed 2007·Granted Feb 15, 2011·45 cites·18 claims
- 0595US7176144B1Plasma detemplating and silanol capping of porous dielectric filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Feb 13, 2007·128 cites·41 claims
- 0694US8137465B1Single-chamber sequential curing of semiconductor wafersSHRINIVASAN KRISHNA·Filed 2005·Granted Mar 20, 2012·588 cites·32 claims
- 0794US7381662B1Methods for improving the cracking resistance of low-k dielectric materialsNOVELLUS SYSTEMS INC·Filed 2006·Granted Jun 3, 2008·32 cites·20 claims
- 0893US9257302B1CVD flowable gap fillWANG FENG·Filed 2012·Granted Feb 9, 2016·16 cites·17 claims
- 0993US7094713B1Methods for improving the cracking resistance of low-k dielectric materialsNOVELLUS SYSTEMS INC·Filed 2004·Granted Aug 22, 2006·74 cites·12 claims
- 1088US8951348B1Single-chamber sequential curing of semiconductor wafersSHRINIVASAN KRISHNAN·Filed 2012·Granted Feb 10, 2015·8 cites·20 claims
- 1187US8889233B1Method for reducing stress in porous dielectric filmsKELMAN MAXIM·Filed 2006·Granted Nov 18, 2014·16 cites·26 claims
- 1256US2025062122A1Implant Hard Mask for SubstratesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →