Inventor · disambiguated record
Feng Yuan
Also filed as: YUAN FENG · Yuan feng sheng
81 granted patents·23 pending applications·1,969 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39TAIWAN SEMICONDUCTOR MFG15LEE TSUNG-LIN8YUAN FENG6HUAWEI TECH CO LTD5
Top patents by PatentIndex Score
104 records- 0198US9262412B2Techniques for predictive input method editorsGOOGLE INC·Filed 2015·Granted Feb 16, 2016·117 cites·20 claims
- 0298US9171929B2Strained structure of semiconductor device and method of making the strained structureLEE TSUNG-LIN·Filed 2012·Granted Oct 27, 2015·593 cites·20 claims
- 0398US8847293B2Gate structure for semiconductor deviceLEE TSUNG-LIN·Filed 2012·Granted Sep 30, 2014·518 cites·17 claims
- 0498US8497528B2Method for fabricating a strained structureLEE TSUNG-LIN·Filed 2010·Granted Jul 30, 2013·241 cites·19 claims
- 0597US8941153B2FinFETs with different fin heightsLEE TSUNG-LIN·Filed 2010·Granted Jan 27, 2015·46 cites·18 claims
- 0697US8373238B2FinFETs with multiple Fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·39 cites·17 claims
- 0796US9564529B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·10 cites·20 claims
- 0895US9147594B2Method for fabricating a strained structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·13 cites·20 claims
- 0995US8748993B2FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 10, 2014·18 cites·20 claims
- 1095US8673709B2FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 18, 2014·17 cites·20 claims
- 1195US8519481B2Voids in STI regions for forming bulk FinFETsYUAN FENG·Filed 2009·Granted Aug 27, 2013·35 cites·29 claims
- 1295US8338305B2Multi-fin device by self-aligned castle fin formationCHEN HSIN-CHIH·Filed 2010·Granted Dec 25, 2012·25 cites·19 claims
- 1394US9953885B2STI shape near fin bottom of Si fin in bulk FinFETYUAN FENG·Filed 2010·Granted Apr 24, 2018·24 cites·20 claims
- 1494US8373229B2Gate controlled bipolar junction transistor on fin-like field effect transistor (FinFET) structureTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·23 cites·20 claims
- 1593US12237227B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·2 cites·20 claims
- 1693US9761666B2Strained channel field effect transistorVAN DAL MARK·Filed 2011·Granted Sep 12, 2017·10 cites·7 claims
- 1793US9263342B2Semiconductor device having a strained regionLEE TSUNG-LIN·Filed 2012·Granted Feb 16, 2016·13 cites·16 claims
- 1893US9112052B2Voids in STI regions for forming bulk FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·10 cites·20 claims
- 1993US9087725B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 21, 2015·11 cites·20 claims
- 2092US8723271B2Voids in STI regions for forming bulk FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 13, 2014·12 cites·20 claims
- 2192US2025366074A1Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2291US11387360B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 2391US8445340B2Sacrificial offset protection film for a FinFET deviceLEE TSUNG-LIN·Filed 2009·Granted May 21, 2013·21 cites·20 claims
- 2490US9257344B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 9, 2016·5 cites·20 claims
- 2590US8996356B1Techniques for predictive input method editorsYANG FAN·Filed 2012·Granted Mar 31, 2015·22 cites·20 claims
- 2690US7301544B2Printing tree-described documentsMICROSOFT CORP·Filed 2006·Granted Nov 27, 2007·21 cites·10 claims
- 2789US12356674B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2889US10707347B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 2989US8878308B2Multi-fin device by self-aligned castle fin formationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·8 cites·20 claims
- 3089US2025392213A1Systems and methods for improving efficiency in a power converter using cascode power stagesEMPOWER SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 3188US11508658B2Semiconductor device package and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·22 claims
- 3288US9721829B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·4 cites·20 claims
- 3388US9285954B2Dynamically-generated selectable option iconsGOOGLE INC·Filed 2013·Granted Mar 15, 2016·11 cites·24 claims
- 3487US9419134B2Strain enhancement for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·5 cites·20 claims
- 3587US8592918B2Forming inter-device STI regions and intra-device STI regions using different dielectric materialsYUAN FENG·Filed 2010·Granted Nov 26, 2013·8 cites·20 claims
- 3686US9711412B2FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·3 cites·20 claims
- 3784US9997616B2Semiconductor device having a strained regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·3 cites·19 claims
- 3883US8846466B2Forming inter-device STI regions and intra-device STI regions using different dielectric materialsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·5 cites·20 claims
- 3983US7154503B2Methods and systems for brush compositionMICROSOFT CORP·Filed 2005·Granted Dec 26, 2006·11 cites·10 claims
- 4082US2025336137A1Processing pipelines for three-dimensional data in autonomous systems and applicationsNVIDIA CORP·Filed 2025·Application pending·0 cites
- 4181US11855210B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4281US8156476B2Debugging support for tasks in multithreaded environmentsMAYBEE PAUL·Filed 2008·Granted Apr 10, 2012·14 cites·20 claims
- 4380US8543991B2Profile driven multicore background compilationRAMASWAMY SUBRAMANIAN·Filed 2011·Granted Sep 24, 2013·11 cites·20 claims
- 4480US2025321441A1Optical modulator and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4578US12408387B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 4678USD1028922SMobile phoneVIVO MOBILE COMMUNICATION CO LTD·Filed 2020·Granted May 28, 2024·8 cites·1 claims
- 4776US11251303B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 4875US11626328B2Strain enhancement for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 4974US12347014B2Processing pipelines for three-dimensional data in autonomous systems and applicationsNVIDIA CORP·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 5074US9397097B2Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·2 cites·17 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →