Inventor · disambiguated record
Fei Zhou
Also filed as: ZHOU FEI · ZHOU FEI F · ZHOU FEI FRANK
306 granted patents·57 pending applications·1,740 citations·filing 2003–2025
99Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP132SANDISK TECHNOLOGIES LLC96SEMICONDUCTOR MFG INT BEIJING CORP23ASTRAZENECA AB11NANCHANG O FILM TECH CO LTD11
Top patents by PatentIndex Score
363 records- 0199US11482539B2Three-dimensional memory device including metal silicide source regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 25, 2022·11 cites·6 claims
- 0299US11177280B1Three-dimensional memory device including wrap around word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·13 cites·20 claims
- 0399US11127728B2Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 21, 2021·9 cites·20 claims
- 0499US10665581B1Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·86 cites·15 claims
- 0599US10290648B1Three-dimensional memory device containing air gap rails and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·71 cites·12 claims
- 0699US10283513B1Three-dimensional memory device with annular blocking dielectrics and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·82 cites·11 claims
- 0799US10103169B1Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch processSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 16, 2018·70 cites·14 claims
- 0898US11239253B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
- 0998US11201139B2Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·7 cites·20 claims
- 1098US11171097B2Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 9, 2021·9 cites·18 claims
- 1198US11145628B1Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 12, 2021·6 cites·20 claims
- 1298US10910272B1Reusable support substrate for formation and transfer of semiconductor devices and methods of using the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 2, 2021·25 cites·19 claims
- 1398US10804291B1Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·22 cites·20 claims
- 1498US10707233B1Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 7, 2020·38 cites·20 claims
- 1598US10651196B1Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 12, 2020·33 cites·13 claims
- 1698US10381559B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·46 cites·22 claims
- 1798US10276583B2Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·51 cites·13 claims
- 1898US9960180B1Three-dimensional memory device with partially discrete charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·46 cites·12 claims
- 1998US9875929B1Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 23, 2018·146 cites·24 claims
- 2097US11527500B2Semiconductor structure containing multilayer bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 13, 2022·4 cites·20 claims
- 2197US11164890B2Cross-point array of ferroelectric field effect transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 2, 2021·5 cites·14 claims
- 2297US11049880B2Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 29, 2021·15 cites·6 claims
- 2397US11024648B2Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·6 cites·18 claims
- 2497US10937809B1Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 2, 2021·25 cites·13 claims
- 2597US10818542B2Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 27, 2020·25 cites·19 claims
- 2697US10529620B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 7, 2020·23 cites·10 claims
- 2797US10381409B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·35 cites·20 claims
- 2897US10290652B1Three-dimensional memory device with graded word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·22 cites·20 claims
- 2997US8862134B1Autonomous power adaptation in a heterogeneous cellular environmentZHOU FEI FRANK·Filed 2011·Granted Oct 14, 2014·46 cites·13 claims
- 3096US11121140B2Ferroelectric tunnel junction memory device with integrated ovonic threshold switchesSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 14, 2021·4 cites·20 claims
- 3196US10790300B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 29, 2020·12 cites·10 claims
- 3296US10700086B2Three-dimensional flat NAND memory device having high mobility channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 30, 2020·12 cites·9 claims
- 3396US10622369B2Three-dimensional memory device including contact via structures that extend through word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 14, 2020·18 cites·10 claims
- 3496US10361213B2Three dimensional memory device containing multilayer wordline barrier films and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 23, 2019·22 cites·11 claims
- 3596US7783610B2Distributed database system providing data and space management methodologySYBASE INC·Filed 2008·Granted Aug 24, 2010·63 cites·38 claims
- 3695US11244958B2Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
- 3795US10868025B2Three-dimensional memory device including replacement crystalline channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 15, 2020·13 cites·13 claims
- 3895US10756110B1Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 25, 2020·14 cites·15 claims
- 3995US10615123B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 7, 2020·11 cites·10 claims
- 4095US7403945B2Distributed database system providing data and space management methodologySYBASE INC·Filed 2004·Granted Jul 22, 2008·107 cites·19 claims
- 4194US11309301B2Stacked die assembly including double-sided inter-die bonding connections and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 19, 2022·3 cites·20 claims
- 4294US11302716B2Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 12, 2022·3 cites·13 claims
- 4394US11282848B2Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 22, 2022·3 cites·20 claims
- 4494US11239254B2Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 1, 2022·3 cites·20 claims
- 4594US10804282B2Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·10 cites·13 claims
- 4694US10797061B2Three-dimensional memory device having stressed vertical semiconductor channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 6, 2020·10 cites·8 claims
- 4794US10381364B2Three-dimensional memory device including vertically offset drain select level layers and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 13, 2019·11 cites·8 claims
- 4893US10355139B2Three-dimensional memory device with amorphous barrier layer and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 16, 2019·11 cites·11 claims
- 4993US9911833B2Semiconductor structures and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Mar 6, 2018·9 cites·20 claims
- 5092US10553592B2Fabrication method of a semiconductor structure by a gate cutting process with multiple sidewall spacers formation in a dummy gate openingSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Feb 4, 2020·6 cites·17 claims
Showing the top 50 of 363 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →