Inventor · disambiguated record
Franz-Josef Niedernostheide
Also filed as: NIEDERNOSTHEIDE FRANZ JOSEF
122 granted patents·8 pending applications·465 citations·filing 2000–2024
99Inventor score
Files withINFINEON TECHNOLOGIES AG87INFINEON TECHNOLOGIES AUSTRIA10SCHULZE HANS-JOACHIM7INFINEON TECHNOLOGIES AUSTRIA AG5PFIRSCH FRANK4
Top patents by PatentIndex Score
130 records- 0198US7538412B2Semiconductor device with a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 26, 2009·144 cites·14 claims
- 0296US11876509B1Gate control method of MOS-gated power deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 16, 2024·6 cites·25 claims
- 0395US12088283B2Actively tracking switching speed control and regulating switching speed of a power transistor during turn-onINFINEON TECHNOLOGIES AG·Filed 2023·Granted Sep 10, 2024·4 cites·12 claims
- 0495US11031929B1Actively tracking switching speed control of a power transistorINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 8, 2021·6 cites·28 claims
- 0594US11444613B1Actively tracking switching speed control and regulating switching speed of a power transistor during turn-onINFINEON TECHNOLOGIES AG·Filed 2021·Granted Sep 13, 2022·5 cites·16 claims
- 0694US7514750B2Semiconductor device and fabrication method suitable thereforINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 7, 2009·22 cites·10 claims
- 0794US7361970B2Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zoneINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·21 cites·13 claims
- 0893US11595035B1Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistorINFINEON TECHNOLOGIES AG·Filed 2021·Granted Feb 28, 2023·3 cites·16 claims
- 0992US9859408B2Power semiconductor transistor having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·6 cites·17 claims
- 1092US7842590B2Method for manufacturing a semiconductor substrate including laser annealingINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 30, 2010·23 cites·21 claims
- 1191US10326009B2Power semiconductor transistor having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 18, 2019·5 cites·23 claims
- 1290US10141404B2Power semiconductor device having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 27, 2018·6 cites·21 claims
- 1390US9054035B2Increasing the doping efficiency during proton irradiationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 9, 2015·8 cites·7 claims
- 1489US8587025B1Method for forming laterally varying doping concentrations and a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Nov 19, 2013·10 cites·19 claims
- 1588US10134835B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 20, 2018·5 cites·22 claims
- 1688US9947741B2Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·4 cites·19 claims
- 1788US7989888B2Semiconductor device with a field stop zone and process of producing the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Aug 2, 2011·13 cites·15 claims
- 1887US11843368B2Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistorINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 12, 2023·1 cites·14 claims
- 1987US8367532B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2012·Granted Feb 5, 2013·5 cites·23 claims
- 2085US9525029B2Insulated gate bipolar transistor device, semiconductor device and method for forming said devicesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 20, 2016·3 cites·20 claims
- 2185US8921931B2Semiconductor device with trench structures including a recombination structure and a fill structureMAUDER ANTON·Filed 2012·Granted Dec 30, 2014·6 cites·20 claims
- 2284US10461739B2Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Oct 29, 2019·4 cites·20 claims
- 2384US9209292B2Charge compensation semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 2484US9166027B2IGBT with reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 20, 2015·6 cites·27 claims
- 2583US10665706B2Power semiconductor transistorINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 26, 2020·2 cites·20 claims
- 2683US9917181B2Bipolar transistor with superjunction structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·3 cites·25 claims
- 2783US8264033B2Semiconductor device having a floating semiconductor zonePFIRSCH FRANK·Filed 2009·Granted Sep 11, 2012·8 cites·15 claims
- 2883US7675108B2Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 9, 2010·7 cites·5 claims
- 2980US10340336B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 2, 2019·2 cites·13 claims
- 3080US9882038B2Method of manufacturing a bipolar semiconductor switchINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 30, 2018·2 cites·16 claims
- 3179US10224206B2Bipolar transistor device with an emitter having two types of emitter regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 5, 2019·2 cites·29 claims
- 3279US9570607B2Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·2 cites·5 claims
- 3379US8829562B2Semiconductor device including a dielectric structure in a trenchSCHULZE HANS-JOACHIM·Filed 2012·Granted Sep 9, 2014·5 cites·26 claims
- 3479US8003502B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 23, 2011·4 cites·22 claims
- 3579US7667297B2Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zoneINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 23, 2010·5 cites·8 claims
- 3677US8101506B2Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor componentSCHULZE HANS-JOACHIM·Filed 2010·Granted Jan 24, 2012·3 cites·16 claims
- 3776US9373710B2Insulated gate bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 21, 2016·4 cites·17 claims
- 3876US7749876B2Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zoneINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 6, 2010·4 cites·19 claims
- 3975US7884389B2Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production methodINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 8, 2011·5 cites·15 claims
- 4075US7696528B2Thyristor which can be triggered electrically and by radiationINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 13, 2010·6 cites·22 claims
- 4175US7557386B2Reverse conducting IGBT with vertical carrier lifetime adjustmentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jul 7, 2009·6 cites·14 claims
- 4274US6723586B1Thyristor provided with integrated circuit-commutated recovery time protection and production method thereforSIEMENS AG·Filed 2000·Granted Apr 20, 2004·16 cites·10 claims
- 4373US9627517B2Bipolar semiconductor switch and a manufacturing method thereforINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 18, 2017·2 cites·16 claims
- 4471US11309410B2Semiconductor device having active and inactive semiconductor mesasINFINEON TECHNOLOGIES AG·Filed 2020·Granted Apr 19, 2022·0 cites·21 claims
- 4571US8859409B2Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor bodyNEIDHART THOMAS·Filed 2012·Granted Oct 14, 2014·3 cites·16 claims
- 4670US11038016B2Insulated gate bipolar transistor device having a fin structureINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 15, 2021·0 cites·18 claims
- 4770US10957764B2Vertical semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 23, 2021·2 cites·9 claims
- 4870US10566462B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS JOACHIM·Filed 2009·Granted Feb 18, 2020·4 cites·32 claims
- 4970US8653556B2Vertical semiconductor deviceNIEDERNOSTHEIDE FRANZ JOSEF·Filed 2009·Granted Feb 18, 2014·5 cites·9 claims
- 5069US12382677B2Power semiconductor device having nanometer-scale structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 5, 2025·0 cites·14 claims
Showing the top 50 of 130 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →