Inventor · disambiguated record
Frank Bin Yang
Also filed as: YANG FRANK B · YANG FRANK BIN
15 granted patents·2 pending applications·173 citations·filing 2008–2012
93Inventor score
Top patents by PatentIndex Score
17 records- 0195US7989298B1Transistor having V-shaped embedded stressorIBM·Filed 2010·Granted Aug 2, 2011·27 cites·20 claims
- 0294US7932143B1Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsGLOBALFOUNDRIES INC·Filed 2009·Granted Apr 26, 2011·32 cites·17 claims
- 0392US8076209B2Methods for fabricating MOS devices having highly stressed channelsYANG FRANK BIN·Filed 2010·Granted Dec 13, 2011·17 cites·20 claims
- 0491US7670934B1Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regionsGLOBALFOUNDRIES INC·Filed 2009·Granted Mar 2, 2010·23 cites·21 claims
- 0590US7767534B2Methods for fabricating MOS devices having highly stressed channelsADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 3, 2010·16 cites·13 claims
- 0688US7939852B2Transistor device having asymmetric embedded strain elements and related manufacturing methodGLOBALFOUNDRIES INC·Filed 2008·Granted May 10, 2011·10 cites·10 claims
- 0786US8026539B2Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2009·Granted Sep 27, 2011·13 cites·23 claims
- 0886US7994014B2Semiconductor devices having faceted silicide contacts, and related fabrication methodsADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 9, 2011·11 cites·5 claims
- 0985US7960229B2Metal oxide semiconductor transistor with reduced gate height, and related fabrication methodsGLOBALFOUNDRIES INC·Filed 2008·Granted Jun 14, 2011·10 cites·10 claims
- 1084US8148750B2Transistor device having asymmetric embedded strain elements and related manufacturing methodPAL ROHIT·Filed 2011·Granted Apr 3, 2012·5 cites·9 claims
- 1176US7829401B2MOSFET with asymmetrical extension implantADVANCED MICRO DEVICES INC·Filed 2008·Granted Nov 9, 2010·5 cites·11 claims
- 1268US8217463B2Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsPAL ROHIT·Filed 2011·Granted Jul 10, 2012·2 cites·20 claims
- 1366US8293609B2Method of manufacturing a transistor device having asymmetric embedded strain elementsPAL ROHIT·Filed 2012·Granted Oct 23, 2012·1 cites·12 claims
- 1462US7632727B2Method of forming stepped recesses for embedded strain elements in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2008·Granted Dec 15, 2009·1 cites·14 claims
- 1547US2010012988A1Metal oxide semiconductor devices having implanted carbon diffusion retardation layers and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2008·Application pending·0 cites
- 1646US8193592B2MOSFET with asymmetrical extension implantYANG FRANK BIN·Filed 2010·Granted Jun 5, 2012·0 cites·20 claims
- 1744US2011204446A1Metal oxide semiconductor transistor with reduced gate height, and related fabrication methodsGLOBALFOUNDRIES INC·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →