Inventor · disambiguated record
Fumio Tahara
Also filed as: TAHARA FUMIO
7 granted patents·4 pending applications·3 citations·filing 2005–2015
71Inventor score
Top patents by PatentIndex Score
11 records- 0168US8916953B2Method for manufacturing silicon single crystal wafer and annealed waferQu wei feng·Filed 2012·Granted Dec 23, 2014·1 cites·8 claims
- 0258US7713851B2Method of manufacturing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2005·Granted May 11, 2010·1 cites·4 claims
- 0357US8877609B2Method for manufacturing bonded substrate having an insulator layer in part of bonded substrateOHTSUKI TSUYOSHI·Filed 2012·Granted Nov 4, 2014·1 cites·16 claims
- 0446US9708726B2Silicon wafer heat treatment methodSHINETSU HANDOTAI KK·Filed 2014·Granted Jul 18, 2017·0 cites·3 claims
- 0540US8551246B2Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal waferTAHARA FUMIO·Filed 2009·Granted Oct 8, 2013·0 cites·5 claims
- 0639US8900971B2Bonded substrate and manufacturing method thereofOHTSUKI TSUYOSHI·Filed 2012·Granted Dec 2, 2014·0 cites·15 claims
- 0739US2015287630A1Method of manufacturing soi waferSHINETSU HANDOTAI KK·Filed 2013·Application pending·0 cites
- 0838US2008038526A1Silicon Epitaxial Wafer And Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 0938US2007269338A1Silicon Epitaxial Wafer and Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 1036US9606030B2Method for detecting crystal defectsQu wei feng·Filed 2012·Granted Mar 28, 2017·0 cites·8 claims
- 1133US2017253995A1Method for heat-treating silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →