Inventor · disambiguated record
Gary Hong
Also filed as: HONG GARY · HONG GARY Y · HONG GARY YEUNDING
222 granted patents·7 pending applications·6,339 citations·filing 1993–2013
99Inventor score
Files withUNITED MICROELECTRONICS CORP180UNITED SEMICONDUCTOR CORP37TRYFON JASON2UNITED MICRO ELECTRONICS CORP1UNITED MICROELECTRONIC CORP1
Top patents by PatentIndex Score
229 records- 0198US5495441ASplit-gate flash memory cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Feb 27, 1996·207 cites·19 claims
- 0298US5460988AProcess for high density flash EPROM cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Oct 24, 1995·201 cites·8 claims
- 0398US5414287AProcess for high density split-gate memory cell for flash or EPROMUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 9, 1995·242 cites·21 claims
- 0497US5378647AMethod of making a bottom gate mask ROM deviceUNITED MICROELECTRONICS CORP·Filed 1993·Granted Jan 3, 1995·147 cites·10 claims
- 0595US6171909B1Method for forming a stacked gateUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Jan 9, 2001·141 cites·9 claims
- 0694US6720267B1Method for forming a cantilever beam model micro-electromechanical systemUNITED MICROELECTRONICS CORP·Filed 2003·Granted Apr 13, 2004·124 cites·26 claims
- 0794US5486714ATrench EEPROM with tunnel oxide in trenchUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 23, 1996·89 cites·8 claims
- 0893US5438009AMethod of fabrication of MOSFET device with buried bit lineUNITED MICROELECTRONICS CORP·Filed 1993·Granted Aug 1, 1995·95 cites·14 claims
- 0992US5523251AMethod for fabricating a self aligned mask ROMUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jun 4, 1996·77 cites·7 claims
- 1092US5429970AMethod of making flash EEPROM memory cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jul 4, 1995·76 cites·25 claims
- 1192US5298447AMethod of fabricating a flash memory cellUNITED MICROELECTRONICS CORP·Filed 1993·Granted Mar 29, 1994·85 cites·18 claims
- 1291US5994745AROM device having shaped gate electrodes and corresponding code implantsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 30, 1999·124 cites·6 claims
- 1391US5429956AMethod for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channelUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jul 4, 1995·109 cites·24 claims
- 1490US6396745B1Vertical two-transistor flash memoryUNITED MICROELECTRONICS CORP·Filed 2001·Granted May 28, 2002·86 cites·19 claims
- 1590US6211012B1Method of fabricating an ETOX flash memoryUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 3, 2001·49 cites·30 claims
- 1690US5413949AMethod of making self-aligned MOSFETUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 9, 1995·70 cites·10 claims
- 1790US5350710ADevice for preventing antenna effect on circuitUNITED MICROELECTRONICS CORP·Filed 1993·Granted Sep 27, 1994·118 cites·18 claims
- 1888US6153472AMethod for fabricating a flash memoryUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Nov 28, 2000·65 cites·20 claims
- 1988US5899719ASub-micron MOSFETUNITED SEMICONDUCTOR CORP·Filed 1997·Granted May 4, 1999·72 cites·25 claims
- 2088US5716884AProcess for fabricating a stacked capacitorUNITED MICROELECTRONICS CORP·Filed 1996·Granted Feb 10, 1998·57 cites·19 claims
- 2188US5667940AProcess for creating high density integrated circuits utilizing double coating photoresist maskUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 16, 1997·96 cites·20 claims
- 2288US5538913AProcess for fabricating MOS transistors having full-overlap lightly-doped drain structureUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 23, 1996·81 cites·6 claims
- 2388US5445984AMethod of making a split gate flash memory cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 29, 1995·57 cites·22 claims
- 2488US5445983AMethod of manufacturing EEPROM memory device with a select gateUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 29, 1995·75 cites·20 claims
- 2587US5512770AMOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Apr 30, 1996·64 cites·8 claims
- 2687US5489543AMethod of forming a MOS device having a localized anti-punchthrough regionUNITED MICROELECTRONICS CORP·Filed 1994·Granted Feb 6, 1996·68 cites·13 claims
- 2786US5635415AMethod of manufacturing buried bit line flash EEPROM memory cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jun 3, 1997·53 cites·22 claims
- 2886US5614746AStructure and process of manufacture of split gate flash memory cellUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 25, 1997·49 cites·18 claims
- 2986US5472896AMethod for fabricating polycide gate MOSFET devicesUNITED MICROELECTRONICS CORP·Filed 1994·Granted Dec 5, 1995·55 cites·4 claims
- 3085US6232202B1Method for manufacturing shallow trench isolation structure including a dual trenchUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 15, 2001·78 cites·10 claims
- 3184US5770501AProcess of fabricating NAND-structure flash EEPROM using liquid phase depositionUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jun 23, 1998·49 cites·16 claims
- 3284US5472897AMethod for fabricating MOS device with reduced anti-punchthrough regionUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 5, 1995·60 cites·13 claims
- 3383US5350698AMultilayer polysilicon gate self-align process for VLSI CMOS deviceUNITED MICROELECTRONICS CORP·Filed 1993·Granted Sep 27, 1994·57 cites·25 claims
- 3482US5529943AMethod of making buried bit line ROM with low bit line resistanceUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jun 25, 1996·43 cites·3 claims
- 3582US5432106AManufacture of an asymmetric non-volatile memory cellUNITED MICROELECTRONICS CORP·Filed 1993·Granted Jul 11, 1995·45 cites·12 claims
- 3681US6207535B1Method of forming shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2000·Granted Mar 27, 2001·35 cites·22 claims
- 3781US6069058AShallow trench isolation for semiconductor devicesUNITED SEMICONDUCTOR CORP·Filed 1997·Granted May 30, 2000·64 cites·24 claims
- 3881US5674760AMethod of forming isolation regions in a MOS transistor deviceUNITED MICROELECTRONICS CORP·Filed 1996·Granted Oct 7, 1997·61 cites·6 claims
- 3979US6001707AMethod for forming shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 14, 1999·56 cites·20 claims
- 4079US5460999AMethod for making fin-shaped stack capacitors on DRAM chipsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Oct 24, 1995·39 cites·20 claims
- 4179US5382545AInterconnection process with self-aligned via plugUNITED MICROELECTRONICS CORP·Filed 1993·Granted Jan 17, 1995·51 cites·13 claims
- 4278US5631482AFlash EEPROM memory cell with polysilicon source/drainUNITED MICROELECTRONICS CORP·Filed 1995·Granted May 20, 1997·32 cites·8 claims
- 4378US5576993AFlash memory array with self-limiting eraseUNITED MICROELECTRONICS CORP·Filed 1996·Granted Nov 19, 1996·36 cites·8 claims
- 4478US5534447AProcess for fabricating MOS LDD transistor with pocket implantUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 9, 1996·42 cites·7 claims
- 4577US5869369AMethod of fabricating a flash memoryUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 9, 1999·34 cites·11 claims
- 4677US5703387ASplit gate memory cell with vertical floating gateUNITED MICROELECTRONICS CORP·Filed 1994·Granted Dec 30, 1997·35 cites·11 claims
- 4777US5481128AStructure for flash memory cellUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 2, 1996·36 cites·7 claims
- 4877US5413950AMethod of forming a DRAM stacked capacitor cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 9, 1995·45 cites·15 claims
- 4977US5349220AFlash memory cell and its operationUNITED MICROELECTRONICS CORP·Filed 1993·Granted Sep 20, 1994·40 cites·18 claims
- 5076US5972752AMethod of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profileUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Oct 26, 1999·34 cites·17 claims
Showing the top 50 of 229 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →