Inventor · disambiguated record
Gary E. Miner
Also filed as: MINER GARY · MINER GARY E · MINER GARY EUGENE
15 granted patents·3 pending applications·936 citations·filing 1988–2023
95Inventor score
Top patents by PatentIndex Score
18 records- 0194US5660472AMethod and apparatus for measuring substrate temperaturesAPPLIED MATERIALS INC·Filed 1994·Granted Aug 26, 1997·181 cites·28 claims
- 0293US6450116B1Apparatus for exposing a substrate to plasma radicalsAPPLIED MATERIALS INC·Filed 1999·Granted Sep 17, 2002·114 cites·30 claims
- 0392US7317229B2Gate electrode structures and methods of manufactureAPPLIED MATERIALS INC·Filed 2005·Granted Jan 8, 2008·19 cites·15 claims
- 0492US6037273AMethod and apparatus for insitu vapor generationAPPLIED MATERIALS INC·Filed 1998·Granted Mar 14, 2000·139 cites·28 claims
- 0589US5755511AMethod and apparatus for measuring substrate temperaturesAPPLIED MATERIALS INC·Filed 1996·Granted May 26, 1998·107 cites·17 claims
- 0688US6159866AMethod for insitu vapor generation for forming an oxide on a substrateAPPLIED MATERIALS INC·Filed 2000·Granted Dec 12, 2000·35 cites·4 claims
- 0786US5848842AMethod of calibrating a temperature measurement systemAPPLIED MATERIALS INC·Filed 1996·Granted Dec 15, 1998·76 cites·12 claims
- 0885US7078302B2Gate electrode dopant activation method for semiconductor manufacturing including a laser annealAPPLIED MATERIALS INC·Filed 2004·Granted Jul 18, 2006·28 cites·33 claims
- 0985US6179466B1Method and apparatus for measuring substrate temperaturesAPPLIED MATERIALS INC·Filed 1998·Granted Jan 30, 2001·87 cites·24 claims
- 1085US6114258AMethod of oxidizing a substrate in the presence of nitride and oxynitride filmsAPPLIED MATERIALS INC·Filed 1998·Granted Sep 5, 2000·95 cites·24 claims
- 1184US6410456B1Method and apparatus for insitu vapor generationAPPLIED MATERIALS INC·Filed 2000·Granted Jun 25, 2002·25 cites·16 claims
- 1278US7541650B2Gate electrode structuresAPPLIED MATERIALS INC·Filed 2007·Granted Jun 2, 2009·5 cites·12 claims
- 1373US7611976B2Gate electrode dopant activation method for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2006·Granted Nov 3, 2009·3 cites·43 claims
- 1455US4963500AMethod of monitoring semiconductor manufacturing processes and test sample thereforSERA SOLAR CORP·Filed 1988·Granted Oct 16, 1990·21 cites·2 claims
- 1554US2024237359A1System-on-a-chip (soc) integration of resistive random-access memory devices with varying switching characteristicsTETRAMEM INC·Filed 2023·Application pending·0 cites
- 1654US2010090294A1Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressureNARWANKAR PRAVIN K·Filed 2009·Application pending·0 cites
- 1748US7658973B2Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressureAPPLIED MATERIALS INC·Filed 2004·Granted Feb 9, 2010·1 cites·23 claims
- 1840US2002136831A1Method and apparatus for insitu vapor generationFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →