Inventor · disambiguated record
Gangfeng Ye
Also filed as: YE GANGFENG
8 granted patents·1 pending application·26 citations·filing 2013–2020
81Inventor score
Top patents by PatentIndex Score
9 records- 0196US9368582B2High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2013·Granted Jun 14, 2016·22 cites·10 claims
- 0283US10347736B2High power gallium nitride electronics using miscut substratesNEXGEN POWER SYSTEMS INC·Filed 2017·Granted Jul 9, 2019·2 cites·19 claims
- 0382US10854727B2High power gallium nitride electronics using miscut substratesNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Dec 1, 2020·1 cites·18 claims
- 0468US10971587B2GaN lateral vertical JFET with regrown channel and dielectric gateYE GANGFENG·Filed 2019·Granted Apr 6, 2021·1 cites·8 claims
- 0565US10566439B2High power gallium nitride electronics using miscut substratesNEXGEN POWER SYSTEMS INC·Filed 2019·Granted Feb 18, 2020·0 cites·15 claims
- 0656US11239321B2GaN lateral vertical HJFET with source-P block contactYE GANGFENG·Filed 2019·Granted Feb 1, 2022·0 cites·13 claims
- 0756US2017133481A1High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2016·Application pending·0 cites
- 0849US10535741B2GaN lateral vertical JFET with regrown channel and dielectric gateHUA SU DIAN LI SU ZHOU CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·9 claims
- 0947US10535740B2GaN lateral vertical HJFET with source-P block contactHUA SU DIAN LI SU ZHOU CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →