Inventor · disambiguated record
Gerardo Delgadino
Also filed as: CHIANG KANG-LIE · DELGADINO GERARDO · DELGADINO GERARDO A · DELGADINO GERARDO ADRIAN
28 granted patents·15 pending applications·953 citations·filing 2001–2023
97Inventor score
Top patents by PatentIndex Score
43 records- 0199US9396961B2Integrated etch/clean for dielectric etch applicationsLAM RES CORP·Filed 2015·Granted Jul 19, 2016·105 cites·26 claims
- 0299US6900596B2Capacitively coupled plasma reactor with uniform radial distribution of plasmaAPPLIED MATERIALS INC·Filed 2002·Granted May 31, 2005·224 cites·53 claims
- 0398US9779956B1Hydrogen activated atomic layer etchingLAM RES CORP·Filed 2017·Granted Oct 3, 2017·109 cites·18 claims
- 0498US8652298B2Triode reactor design with multiple radiofrequency powersDHINDSA RAJINDER·Filed 2011·Granted Feb 18, 2014·160 cites·20 claims
- 0597US11594400B2Multi zone gas injection upper electrode systemLAM RES CORP·Filed 2020·Granted Feb 28, 2023·6 cites·11 claims
- 0695US10079154B1Atomic layer etching of silicon nitrideLAM RES CORP·Filed 2017·Granted Sep 18, 2018·17 cites·16 claims
- 0795US9515156B2Air gap spacer integration for improved fin device performanceLAM RES CORP·Filed 2015·Granted Dec 6, 2016·42 cites·19 claims
- 0891US7300597B2Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric materialAPPLIED MATERIALS INC·Filed 2006·Granted Nov 27, 2007·18 cites·23 claims
- 0990US7432209B2Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant materialAPPLIED MATERIALS INC·Filed 2006·Granted Oct 7, 2008·25 cites·18 claims
- 1090US6921727B2Method for modifying dielectric characteristics of dielectric layersAPPLIED MATERIALS INC·Filed 2003·Granted Jul 26, 2005·61 cites·35 claims
- 1189US7276447B1Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant materialAPPLIED MATERIALS INC·Filed 2006·Granted Oct 2, 2007·24 cites·18 claims
- 1287US6652712B2Inductive antenna for a plasma reactor producing reduced fluorine dissociationAPPLIED MATERIALS INC·Filed 2001·Granted Nov 25, 2003·29 cites·12 claims
- 1386US7435685B2Method of forming a low-K dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2006·Granted Oct 14, 2008·13 cites·18 claims
- 1485US6667577B2Plasma reactor with spoke antenna having a VHF mode with the spokes in phaseAPPLIED MATERIALS INC·Filed 2001·Granted Dec 23, 2003·28 cites·59 claims
- 1584US7244313B1Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination stepsAPPLIED MATERIALS INC·Filed 2006·Granted Jul 17, 2007·11 cites·19 claims
- 1682US7828987B2Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuitsAPPLIED MATERIALS INC·Filed 2006·Granted Nov 9, 2010·8 cites·24 claims
- 1780US7977245B2Methods for etching a dielectric barrier layer with high selectivityAPPLIED MATERIALS INC·Filed 2006·Granted Jul 12, 2011·6 cites·22 claims
- 1880US7132369B2Method of forming a low-K dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2003·Granted Nov 7, 2006·27 cites·34 claims
- 1979US8083963B2Removal of process residues on the backside of a substrateDELGADINO GERARDO A·Filed 2007·Granted Dec 27, 2011·10 cites·24 claims
- 2076US8394722B2Bi-layer, tri-layer mask CD controlDELGADINO GERARDO A·Filed 2008·Granted Mar 12, 2013·6 cites·14 claims
- 2176US8048806B2Methods to avoid unstable plasma states during a process transitionAPPLIED MATERIALS INC·Filed 2006·Granted Nov 1, 2011·5 cites·13 claims
- 2268US10134600B2Dielectric contact etchLAM RES CORP·Filed 2017·Granted Nov 20, 2018·1 cites·20 claims
- 2368US7718543B2Two step etching of a bottom anti-reflective coating layer in dual damascene applicationAPPLIED MATERIALS INC·Filed 2006·Granted May 18, 2010·3 cites·20 claims
- 2467US8236188B2Method for low-K dielectric etch with reduced damageJI BING·Filed 2010·Granted Aug 7, 2012·2 cites·18 claims
- 2567US7309448B2Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric materialAPPLIED MATERIALS INC·Filed 2003·Granted Dec 18, 2007·10 cites·41 claims
- 2663US10622195B2Multi zone gas injection upper electrode systemBISE RYAN·Filed 2012·Granted Apr 14, 2020·2 cites·11 claims
- 2760US9040430B2Method of stripping organic mask with reduced damage to low-K filmLAM RES CORP·Filed 2013·Granted May 26, 2015·1 cites·16 claims
- 2851US2025166967A1Systems and methods for reducing variability in features of a substrateLAM RES CORP·Filed 2022·Application pending·0 cites
- 2950US9263240B2Dual zone temperature control of upper electrodesMARAKHTANOV ALEXEI·Filed 2012·Granted Feb 16, 2016·0 cites·10 claims
- 3050US2007026665A1Method of fabricating a dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3150US2025308919A1Simultaneous dielectric etch with metal passivationLAM RES CORP·Filed 2023·Application pending·0 cites
- 3249US2025087456A1High selectivity and uniform dielectric etchLAM RES CORP·Filed 2023·Application pending·0 cites
- 3348US2008023144A1Dielectric etch tool configured for high density and low bombardment energy plasma providing high etch ratesDELGADINO GERARDO A·Filed 2007·Application pending·0 cites
- 3448US2025054769A1Method for reducing variations in mask topographyLAM RES CORP·Filed 2022·Application pending·0 cites
- 3545US2007224803A1Methods for etching a dielectric barrier layer with high selectivityXIAO YING·Filed 2006·Application pending·0 cites
- 3645US2007224825A1Methods for etching a bottom anti-reflective coating layer in dual damascene applicationXIAO YING·Filed 2006·Application pending·0 cites
- 3743US2007224827A1Methods for etching a bottom anti-reflective coating layer in dual damascene applicationXIAO YING·Filed 2006·Application pending·0 cites
- 3842US2005059234A1Method of fabricating a dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3942US2007048882A1Method to reduce plasma-induced charging damageAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4042US2006118519A1Dielectric etch method with high source and low bombardment plasma providing high etch ratesAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 4136US2003228768A1Dielectric etching with reduced striationAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4236US2003037879A1Top gas feed lid for semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 4335US2005266691A1Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistryAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →